10 results on '"Jiang, Guangyuan"'
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2. A split-gate AlGaN/GaN heterostructure field-effect transistor with an auxiliary gate.
3. A novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology.
4. Simulation of the effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field effect transistors using the Monte Carlo method.
5. The influence of polarization Coulomb field scattering on the parasitic source resistance of E-mode P-GaN/AlGaN/GaN heterostructure field-effect transistors.
6. Polarization Coulomb field scattering with the electron systems in AlGaN/GaN heterostructure field-effect transistors.
7. The mechanism of the enhanced intensity for polarization Coulomb field scattering in AlN/GaN heterostructure field effect transistors with submicron gate length.
8. The relationship between AlGaN barrier layer thickness and polarization Coulomb field scattering in AlGaN/GaN heterostructure field-effect transistors.
9. The influence of Al composition in AlGaN barrier layer on polarization Coulomb field scattering in AlGaN/GaN heterostructure field-effect transistors.
10. Comparison of ratio of gate length to gate-drain distance influences on source access resistance of AlGaN/AlN/GaN HFETs at different temperatures.
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