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In the field of biomemorizers, the simultaneous enhancement of resistive switching (RS) performance and environmental robustness, and the understanding the RS mechanism involving interfacial interaction is still challengeable. Herein, the bio-composites by encapsulating graphene (GR), graphene oxide (GO) and reduced graphene oxide (RGO) into chitosan (CS) have been fabricated as memory devices with the structure of FTO/bio-composite/Ag. Among them, FTO/GO@CS(12 %)/Ag biomemorizer exhibits the best RS performance with high ON/OFF ratio (105.92), and it possesses good thermal (170 °C) and irradiation stabilities (UV exposure for 96 h). The RS mechanism is due to the migration of oxygen vacancies accompanied by formation of Ag conducting filaments in the bio-composite films. Therefore, the enhanced resistive switching performance after encapsulating into CS can be explained as the increment of defects, the higher current densities and quenched radicals. Specially, for the first time we find the presence of voltage-induced packing mode changes in GO@CS composite, which can facilitate the migration of oxygen vacancies and render its best RS performance. In all, the more carboxyl groups can strengthen the GO-CS interfacial interactions through the formation of stable hydrogen bonding network and covalent bonds, which can enhance the stabilities and makes the composites be more sensitive to electrical stimulus. The rules drawn in this work will be significant for the construction of new biomemorizers with good environmental robustness. [Display omitted] • Graphene derivants (graphene, graphene oxide and reduced graphene oxide) have been encapsulated in chitosan to construct biomemorizers. • FTO/GO@CS (12 %)/Ag biomemorizer exhibited the good RS performance with high ON/OFF ratio and excellent thermal/irradiation stabilities. • The presence of voltage-induced packing mode changes in bio-composites can facilitate the migration of oxygen vacancies. • The more carboxyl groups can strengthen the GO-CS interfacial interactions, which can enhance the stabilities and makes the composites be more sensitive to electrical stimulus. [ABSTRACT FROM AUTHOR]

Bio-resistive memory devices with good environmental robustness are important for the next generation of biodegradable electronic devices. In this field, the facile achievement of both resistive switching performance and environmental robustness is still challengeable. Herein, resistive switching active oxidized multi-walled carbon nanotube (O-MWCNT) has been doped into chitosan (CS) to produce twisted O-MWCNT-CS biocomposites based on strong -COO-/NH 3 + electrostatic interaction. The FTO/O-MWCNT-CS(8%)/Ag biomemorizer can exhibit good resistive switching performance with high ON/OFF ratio (104.51) and low setting voltage (0.86 V). Besides, this biomemorizer possesses good environmental robustness with thermal (200 °C) and ionizing irradiation tolerance (UV exposure for 72 h). Ag conductive filament formation and rupture account for the resistive switching behavior. Specially, the conduction pathways provided by O-MWCNT and its good radical scavenging ability are the reason for the facile realization of resistive switching performances even under large layer thickness. The facile carboxylation on MWCNT and robust O-MWCNT-CS biocompoiste together with good environmental robustness render the promising applications as green, stable and biodegradable electronic devices. [Display omitted] • Oxidized multi-walled carbon nanotube was doped into chitosan to produce biocomposite with strong -COO-/NH 3 + interactions.. • The biomemorizer exhibits good resistive switching performance (ON/OFF ratio:104.51, V Set : 0.86 V). • This biomemorizer possesses good thermal/irradiating robustness (200 °C, UV exposure for 72 h). • The conduction pathways and radical scavenging ability account for the good resistive switching performances. [ABSTRACT FROM AUTHOR]