Simultaneously elevating the resistive switching performance and thermal/irradiative stabilities of biomemorizer based on twisted carboxylated multi-walled carbon nanotube-chitosan composites.

Bio-resistive memory devices with good environmental robustness are important for the next generation of biodegradable electronic devices. In this field, the facile achievement of both resistive switching performance and environmental robustness is still challengeable. Herein, resistive switching active oxidized multi-walled carbon nanotube (O-MWCNT) has been doped into chitosan (CS) to produce twisted O-MWCNT-CS biocomposites based on strong -COO-/NH 3 + electrostatic interaction. The FTO/O-MWCNT-CS(8%)/Ag biomemorizer can exhibit good resistive switching performance with high ON/OFF ratio (104.51) and low setting voltage (0.86 V). Besides, this biomemorizer possesses good environmental robustness with thermal (200 °C) and ionizing irradiation tolerance (UV exposure for 72 h). Ag conductive filament formation and rupture account for the resistive switching behavior. Specially, the conduction pathways provided by O-MWCNT and its good radical scavenging ability are the reason for the facile realization of resistive switching performances even under large layer thickness. The facile carboxylation on MWCNT and robust O-MWCNT-CS biocompoiste together with good environmental robustness render the promising applications as green, stable and biodegradable electronic devices. [Display omitted] • Oxidized multi-walled carbon nanotube was doped into chitosan to produce biocomposite with strong -COO-/NH 3 + interactions.. • The biomemorizer exhibits good resistive switching performance (ON/OFF ratio:104.51, V Set : 0.86 V). • This biomemorizer possesses good thermal/irradiating robustness (200 °C, UV exposure for 72 h). • The conduction pathways and radical scavenging ability account for the good resistive switching performances. [ABSTRACT FROM AUTHOR]