1. Polarization Coulomb field scattering with the electron systems in AlGaN/GaN heterostructure field-effect transistors.
- Author
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Jiang, Guangyuan, Lv, Yuanjie, Lin, Zhaojun, Yang, Yongxiong, Liu, Yang, Guo, Shuoshuo, and Zhou, Yan
- Subjects
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FIELD-effect transistors , *ELECTRON scattering , *SCATTERING (Mathematics) , *GALLIUM nitride films , *ELECTRONS - Abstract
AlGaN/GaN heterostructure field-effect transistors (HFETs) with three kinds of gate lengths were fabricated, and the theory of polarization Coulomb field (PCF) scattering with the electron systems in the AlGaN/GaN HFETs was studied. There are two methods of analysis and calculation of the PCF scattering in AlGaN/GaN HFETs: one is by considering the 2-dimensional electronic gas (2DEG) of the gate-source, gate-drain, and gate regions as three independent electron systems and the other is by considering the 2DEG of the drain–source channel as a unified electron system. The calculation and analysis of the additional polarization charges underneath the gate region for the prepared AlGaN/GaN HFETs indicate that the theory of PCF scattering in AlGaN/GaN HFETs with three independent electron systems is more accurate. [ABSTRACT FROM AUTHOR]
- Published
- 2020
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