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Cesium lead bromide (CsPbBr 3 , CPB) powder formed by micro-, nanocrystals (MC, NC) and quantum dots (QD) was synthesized as free-standing and polystyrene covered. Luminescence was multicomponent, in general, ranging from below 1.9 eV up to about 2.6 eV. The ultrafast decay kinetics exhibited strong decay time component with the value of 260 ps. Electron paramagnetic resonance (EPR) revealed surface defects like O 2 − and some spin transitions most likely originating from some complex defect, supposedly F-V k (H) dimer center under the constant ultraviolet (UV) light irradiation at the temperature T = 10 K. The thermal release of the electrons from the O 2 − center was correlated with the 117 K thermally stimulated luminescence (TSL) peak. Coating with polystyrene resulted in the about doubly increased decay time of luminescence. The O 2 − and F-V k (H) EPR resonances were not observed as well. The TSL peak which might be ascribed to the O 2 − was not clearly detected anymore. The glow curve was composed of one very broad peak typical for the amorphous materials. At the same time, the polystyrene prevented the MCs creation. The existence of charge/energy transfer between the CPB and polystyrene due to the chemical bonding was assumed and confirmed also by calculations. [Display omitted] • EPR, TSL and RL study of charge trapping and luminescence in CsPbBr 3. • Charge/energy transfer was detected. • O 2 − -related electron trapping center was revealed in these crystals. • TSL peak was correlated to the release of electrons from the O 2 − surface center. • Complex bromine vacancy-related charge trapping center was observed. [ABSTRACT FROM AUTHOR]

We have investigated Li 4 SiO 4 scintillation crystals for their possible application in neutron detection due to high Li content and low density of 2.35 g/cm 3 . The micro-pulling-down method employing the Ir crucible and afterheater was optimized for crystal growth of Li 4 SiO 4 taking into account the Li evaporation. To grow high-quality crack-free single crystals, the heating power was increased to establish milder temperature gradient, thicker meniscus, smaller crystal diameter and resulting smaller stress in the as-grown crystals. The undoped, Ti-, Cr-, and Al- doped crystals were prepared and studied. Radioluminescence measurements under X-ray excitation showed quite high overall scintillation efficiency of the Ti-doped sample reaching as high as 250% of that of Bi 4 Ge 3 O 12 reference scintillator. The emission spectrum was dominated by one broad band peaking at 350 nm related to Ti 4+ impurity. Reasonable light yield of 10000 photons/neutron was found. However, its long decay time of 54 μs might be a limitation especially for high counting rate applications. The overall scintillation efficiency of the Cr 3+ sample was much lower and the spectrum shows one broad peak at 463 nm which does not correspond to Cr 3+ luminescence. The radioluminescence spectrum of the Al-doped sample resembled to that of the Ti-doped one, just its magnitude is considerably lower, which was explained by Ti contamination. Peculiarities and optimization of crystal growth and a preliminary sketch of luminescence mechanisms and dopant incorporation are discussed. [ABSTRACT FROM AUTHOR]

Ce-doped lutetium aluminum garnet Lu 3 Al 5 O 12 (LuAG) nanoceramics were fabricated at 1600 °C and 1700 °C by spark-plasma sintering (SPS) method from nano-powders prepared by radiation synthesis. Both undoped and Ce-doped LuAG ceramic samples were also prepared from the nano-powders at 1700 °C with significantly increased pre-heating rate. The backscattered electron images revealed large amount of pores in all the Ce-doped samples causing their significant opacity. On the other hand, very large grains and no pores were revealed in the undoped sample, which was the only transparent one. The radioluminescence measurements revealed superior overall scintillation efficiency of the samples sintered at the temperature 1700 °C, and their defect emission in the UV region was ascribed to oxygen-vacancy-related defects such as F + centers. The photoluminescence decay of the defect emission was characterized by an extremely fast decay time of a few nanoseconds. Influence of sintering procedure and subsequent annealing on the luminescence and scintillation properties is discussed. [ABSTRACT FROM AUTHOR]

[Display omitted] • Electron and hole trapping centers were observed in the molybdenum doped zinc oxide rods. • Electron trapping centers were mostly molybdenum-based. • Holes were trapped at oxygen complexes. • Exciton- and defect-related emission bands appear suppressed after X-ray irradiation. • Zinc vacancies participated in the charge trapping processes. Peculiarities of the point defects creation under X-ray irradiation and the influence of Mo doping in ZnO powders of nano- and microrods fabricated by the hydrothermal growth method (as-grown and annealed in air) were studied in detail. Correlated experiments of X-ray diffraction, X-ray photoelectron spectroscopy, electron paramagnetic resonance, photo- and radioluminescence as well as thermally stimulated luminescence allowed us to trace the effect of the molybdenum inclusion on the phase purity of synthesized materials and the role of Mo in the creation of X-ray induced point defects. Oxygen-based hole trapping centers (most probably involving interstitial oxygen) as well as Mo5+-based electron trapping centers were observed and their thermal stabilities were studied. Some amount of the hole trapping centers seemed to be directly connected with the creation of Mo5+. Zinc vacancies and the Mo5+ centers up to some extent were assumed to act as recombination centers for the holes released from the hole trapping centers. The X-ray irradiation also affects the luminescence properties of the ZnO:Mo samples – the intensity of the luminescence bands in general becomes weaker. [ABSTRACT FROM AUTHOR]

The influence of the Mg 2+ codoping and annealing in the air on the scintillation and luminescence characteristics of Pr-doped lutetium-aluminum garnet crystals (LuAG) was studied to find a possible positive effect of Pr 4+ . The overall scintillation efficiency under X-ray excitation of the annealed Pr- doped samples decreased with increasing Mg concentration. This was explained by increased overlap of the Pr 3+ 5d-4f emission with the charge-transfer (CT) absorption band of the Pr 4+ ion stabilized by Mg 2+ . This absorption caused even greater decrease of the light yield, as the light is collected from the whole sample volume in the pulse-height spectrum measurement. Electron centers based on oxygen vacancies (F + centers) which can have negative influence on scintillation mechanism were revealed by the electron paramagnetic resonance (EPR) experiments. The O - hole center was detected as well and the temperature dependences of the EPR spectra showed that its thermal stability was decreased by Mg codoping. Negligible changes in the decay time of Pr 3+ 5d-4f photoluminescence exclude the non-radiative energy transfer from relaxed 5d 1 excited state of Pr 3+ towards CT absorption transition of Pr 4+ and suggest that simple reabsorption of the emitted light takes place. Unlike for the Ce-doped analogs, promoting the Pr 3+ luminescence center to the tetravalent state by divalent ion co-doping and air annealing did not improve scintillation properties of Pr-doped LuAG. [ABSTRACT FROM AUTHOR]

Driven by the pursuit of optimizing the luminescent properties of garnet-based single crystals for X-ray imaging applications, this work reports on the successful synthesis and in-depth characterization of GYAGG crystals doped with Ce³⁺ or Tb³⁺ ions, and doubly-doped with both of them. Micro-pulling down synthesis yielded crystals with a single cubic phase confirmed by X-ray diffraction. Photoluminescence (PL) and radioluminescence (RL) measurements on Ce³⁺,Tb³⁺ co-doped GYAGG revealed bidirectional energy transfer processes. Characteristic broadband 5d 1 →4f emission of Ce³⁺ centers peaking at 530 nm and narrow 4f→4f emission lines of Tb³⁺ ions starting from 5D 4 level within 480–630 nm were observed. At higher doping levels, cross-relaxation in Tb³⁺ pairs resulted depleted 5D 3 state and only the emission from 5D 4 one was observed in the spectra. Analysis of PL decay characteristics corroborated the spectral observations, confirming progressively decreasing Ce³⁺ decay time (down to 40 ns at 15 % Tb3+) due to enhanced Ce³⁺→Tb³⁺ energy transfer. Similarly, the Tb³⁺ decay time accelerated by more than 60 % after the Ce³⁺ co-doping. Notably, co-doping with 0.5 % Ce³⁺ and 10–15 % Tb³⁺ doubled the luminescence intensity of RL spectra compared to 0.5 % Ce³⁺-doping alone, attributed to the increased density of emitting centers. • High-quality and crack-free GYAGG:Ce,Tb single crystals were successfully grown. • The photoluminescence spectra revealed Ce³⁺↔Tb³⁺ bidirectional energy transfer. • At lower Tb³⁺ doping (0.5 %), the bidirectional energy transfer was inefficient. • High Tb³⁺ doping (15 %) significantly enhanced energy transfer. • Co-doping yielded a two-fold radioluminescence intensity compared to sole doping. [ABSTRACT FROM AUTHOR]

Luminescence and scintillation properties of Lu 2 YAl 2.5 Ga 2.5 O 12 :Ce,Mg (0.02, 0.05 %) garnet crystals grown by the micro-pulling down method were investigated. The onset temperature for luminescence quenching at ∼365 K is determined from the temperature dependence of photoluminescence decay time. At room temperature, the Mg (0.05 %) sample exhibits high integral scintillation efficiency of ∼445 % of BGO crystal, light yield value of 23,500 photons/MeV, and fast scintillation decay times of 20 ns (15 %) + 54 ns (85 %). The higher radioluminescence intensity of the Mg (0.05 %) sample correlates with an appearance of its lower themally-stimulated luminescence intensity in 77–500 K range. • Luminescence and scintillation properties of Lu 2 YAl 2.5 Ga 2.5 O 12 :Ce,Mg (Mg = 0.02 %, 0.05 %) crystals are investigated. • Both crystals show onset of luminescence quenching at 365 K. • Lu 2 YAl 2.5 Ga 2.5 O 12 :Ce,0.05%Mg shows light yield of 23,500 photons/MeV. • Lu 2 YAl 2.5 Ga 2.5 O 12 :Ce,0.05%Mg shows scintillation decay time of 20 ns (14 %) + 54 ns (86 %). • Thermoluminescence characteristics are investigated. [ABSTRACT FROM AUTHOR]

The scintillation characteristics of Gd 3 Al 2 Ga 3 O 12 :Ce, Li (GAGG:Ce,Li) and Gd 3 Al 2 Ga 3 O 12 :Ce, Mg (GAGG:Ce,Mg) single crystals were compared. Radioluminescence spectra and photoluminescence decay curves were measured at various temperatures between 77 and 500 K to investigate the thermal luminescence quenching. At 662 keV γ rays, the LY value of 35,400 photons/MeV and energy resolution of 6.9% obtained for GAGG:Ce, Li are superior to those of 24,200 photons/MeV and 9.5% for GAGG:Ce,Mg. Scintillation decays are approximated by a double exponentials with a fast principal decay component of 47 ns (83%) for GAGG:Ce, Mg and 90 ns (86%) for GAGG:Ce,Li. Coincidence time resolution of 282 ps obtained for GAGG:Ce, Mg is better than that of 389 ps for GAGG:Ce,Li. GAGG:Ce, Mg shows a much lower afterglow and thermally stimulated luminescence intensity with respect to GAGG:Ce,Li. • Scintillation properties of Li+ and Mg2+ -codoped Gd 3 Al 2 Ga 3 O 12 :Ce are compared. • Gd 3 Al 2 Ga 3 O 12 :Ce, Mg exhibits better timing performance. • Gd 3 Al 2 Ga 3 O 12 :Ce, Mg shows lower afterglow and TSL intensity. • Gd 3 Al 2 Ga 3 O 12 :Ce, Li exhibits high light yield and good energy resolution. [ABSTRACT FROM AUTHOR]

Cerium doped gadolinium gallium aluminum garnet (Gd 3 Al 3 Ga 2 O 12 , GAGG) was synthesized in the glass ceramics form by the crystallization from Gd 2 O 3 –Al 2 O 3 –Ga 2 O 3 –SiO 2 –CeO 2 glass in the following weight proportion: 101 : 26: 47 : 25: 1. The spatial distribution and incorporation of Ce into the GAGG ceramic grains as well as the luminescence and scintillation performance are studied carrying out correlated experiments of photo-, radio- and cathodoluminescence including decay kinetics as well as energy dispersive X-ray spectroscopy combined with scanning electron microscopy. Optical absorption features were investigated using photothermal deflection spectroscopy. Cerium stays within the material mostly in the Ce3+ charge state. Its distribution in the bulk of the sample exhibits irregular trend indicating the tendency to coalesce in the middle. • The GAGG:Ce glass nanoceramics was fabricated. • Spatial distribution of Ce3+ in the batch of the glass nanoceramics was observed. • Hole trapping processes affect the luminescence in GAGG:Ce glass nanoceramics. [ABSTRACT FROM AUTHOR]

Optical and scintillation characteristics of Mg2+-codoped Lu 2 Y(Al 5-x Ga x)O 12 :Ce (x = 2, 3) multicomponent garnet crystals grown by the micro-pulling down method were investigated. At RT, the shortening of scintillation decay time and a decrease of light yield (LY) value measured for a higher Ga containing samples can be explained by thermal ionization of the Ce3+ 5d 1 excited state. At 662 keV γ-rays, Lu 2 YAl 3 Ga 2 O 12 : Ce, 0.05%Mg exhibits high LY value of 29,000 ph/MeV along with scintillation decay times of 50 ns (86%) + 73 ns (14%). Co-doping with larger Mg2+ content leads to a decrease of LY value, scintillation decay time, and afterglow level. Radioluminescence quenching observed at low temperature region in correlation with large thermoluminescence peaks can be caused by trapping of electrons at intrinsic shallow traps. • Luminescence and scintillation properties of Lu 2 Y(Al 5-x Ga x)O 12 :Ce,Mg (x = 2, 3) crystals are investigated. • Temperature dependencies of photo-and radioluminescence are presented. • Lu 2 YAl 3 Ga 2 O 12 :Ce,0.05%Mg shows high light yield of 29,000 photons/MeV. • Lu 2 YAl 3 Ga 2 O 12 :Ce,0.05%Mg shows quenching temperature at 435 K due to thermal ionization. • Afterglow and thermoluminescence characteristics are investigated. [ABSTRACT FROM AUTHOR]

The optical and scintillation properties of Ce 3+ -doped YGd 2 Al 5− x Ga x O 12 ( x =2,3,4) single crystals were investigated. With increasing Ga content in the garnet host, the 5d 1 absorption and emission bands shift toward higher energy due to the decrease in the crystal field splitting of the 5d levels. Temperature dependences of absorption and emission spectra and of photoluminescence decays of both prompt and delayed components were measured. Light yield (LY) and its dependence on an amplifier shaping time were measured under excitation with γ-rays. High LY value of 38,000 photons/MeV was obtained for a YGd 2 Al 2 Ga 3 O 12 :Ce sample. Scintillation decay was measured with an extended dynamical and temporal scale under the nanosecond-pulsed soft X-ray excitation. The relative content of the fastest component in the scintillation response increases with increasing Ga content. [ABSTRACT FROM AUTHOR]

Mg2+-codoped Y 0.6 Gd 2.4 Al 2 Ga 3 O 12 :Ce (YGAGG:Ce,Mg) single crystal was grown by the Czochralski method and its luminescence and scintillation properties were investigated. Temperature dependence of radioluminescence (RL) yield and photoluminescence (PL) decay time was measured, and activation energy of thermal ionization process was determined from temperature-dependent PL decay time measurement. YGAGG:Ce,Mg exhibited high X-ray excited RL yield almost 5 times higher than BGO reference scintillator. Its light yield of 41,500 ph/MeV and scintillation decay times of 12 ns (2%) + 52 ns (65%) + 207 ns (33%) were measured under excitation with 662 keV γ rays from 137Cs source. Afterglow and thermally stimulated luminescence characteristics are also investigated. • Luminescence and scintillation properties of Y 0.6 Gd 2.4 Al 2 Ga 3 O 12 :Ce,Mg crystal are investigated. • Temperature dependence of photo-and radioluminescence are presented. • Y 0.6 Gd 2.4 Al 2 Ga 3 O 12 :Ce,Mg shows high light yield of 41,500 photons/MeV. • Luminescence quenching above RT can be caused by thermal ionization. • Afterglow and thermoluminescence characteristics are investigated. [ABSTRACT FROM AUTHOR]

Luminescence and scintillation characteristics of Mg2+-codoped (Lu x Gd 3-x)Al 2.4 Ga 2.6 O 12 :Ce (x = 0.2–0.8) garnet crystals grown by the micro-pulling down method are investigated. The Ce3+ 5d 1 → 4f luminescence is blue-shifted with increasing Lu content due to the decrease in crystal field splitting of the 5 d levels. With increasing Lu content, the shortening of scintillation decay time accompanied with a decrease of LY value as measured at room temperature can be explained by thermal ionization of the Ce3+ 5d 1 excited state. Co-doping with Mg2+ results in the shortening of scintillation decay time, the reduction of LY value and afterglow intensity. At low temperature the radioluminescence quenching is observed in correlation with large thermoluminescence peaks, which can be attributed to the localization of electrons at intrinsic shallow traps. • Luminescence and scintillation of (Lu,Gd) 3 Al 2.4 Ga 2.6 O 12 :Ce, Mg crystals are investigated. • Temperature dependence of photo-and radioluminescence are presented. • Luminescence quenching above RT can be caused by thermal ionization. • Afterglow and low-temperature TL characteristics are investigated. [ABSTRACT FROM AUTHOR]