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At the heart of the flourishing field of machine learning potentials are graph neural networks, where deep learning is interwoven with physics-informed machine learning (PIML) architectures. Various PIML models, upon training with density functional theory (DFT) material structure-property datasets, have achieved unprecedented prediction accuracy for a range of molecular and material properties. A critical component in the learned graph representation of crystal structures in PIMLs is how the various fragments of the structure's graph are embedded in a neural network. Several of the state-of-art PIML models apply spherical harmonic functions. Such functions are based on the assumption that DFT computes the Coulomb potential of atom-atom interactions. However, DFT does not directly compute such potentials, but integrates the electron-atom potentials. We introduce the direct integration of the external potential (DIEP) methods which more faithfully reflects that actual computational workflow in DFT. DIEP integrates the external (electron-atom) potential and uses these quantities to embed the structure graph into a deep learning model. We demonstrate the enhanced accuracy of the DIEP model in predicting the energies of pristine and defective materials. By training DIEP to predict the potential energy surface, we show the ability of the model in predicting the onset of fracture of pristine and defective carbon nanotubes., Comment: 14 pages, 4 figures

Defects in atomically thin materials can drive new functionalities and expand applications to multifunctional systems that are monolithically integrated. An ability to control formation of defects during the synthesis process is an important capability to create practical deployment opportunities. Molybdenum disulfide (MoS$_2$), a two-dimensional (2D) semiconducting material harbors intrinsic defects that can be harnessed to achieve tuneable electronic, optoelectronic, and electrochemical devices. However, achieving precise control over defect formation within monolayer MoS$_2$, while maintaining the structural integrity of the crystals remains a notable challenge. Here, we present a one-step, in-situ defect engineering approach for monolayer MoS$_2$ using a pressure dependent chemical vapour deposition (CVD) process. Monolayer MoS$_2$ grown in low-pressure CVD conditions (LP-MoS$_2$) produces sulfur vacancy (Vs) induced defect rich crystals primarily attributed to the kinetics of the growth conditions. Conversely, atmospheric pressure CVD grown MoS$_2$ (AP-MoS$_2$) passivates these Vs defects with oxygen. This disparity in defect profiles profoundly impacts crucial functional properties and device performance. AP-MoS$_2$ shows a drastically enhanced photoluminescence, which is significantly quenched in LP-MoS$_2$ attributed to in-gap electron donor states induced by the Vs defects. However, the n-doping induced by the Vs defects in LP-MoS$_2$ generates enhanced photoresponsivity and detectivity in our fabricated photodetectors compared to the AP-MoS$_2$ based devices. Defect-rich LP-MoS$_2$ outperforms AP-MoS$_2$ as channel layers of field-effect transistors (FETs), as well as electrocatalytic material for hydrogen evolution reaction (HER). This work presents a single-step CVD approach for in-situ defect engineering in monolayer MoS$_2$ and presents a pathway to control defects in other monolayer material systems., Comment: 29 pages, 5 figures

Colour centres in diamond are attractive candidates for numerous quantum applications due to their good optical properties and long spin coherence times. They also provide access to the even longer coherence of hyperfine coupled nuclear spins in their environment. While the NV centre is well studied, both in experiment and theory, the hyperfine couplings in the more novel centres (SiV, GeV, and SnV) are still largely unknown. Here we report on the first all-electron \textit{ab-initio} calculations of the hyperfine constants for SiV, GeV, and SnV defects in diamond, both for the respective defect atoms ($^{29}$Si, $^{73}$Ge, $^{117}$Sn, $^{119}$Sn), as well as for the surrounding $^{13}$C atoms. Furthermore, we calculate the nuclear quadrupole moments of the GeV defect. We vary the Hartree-Fock mixing parameter for Perdew-Burke-Ernzerhof (PBE) exchange correlation functional and show that the hyperfine couplings of the defect atoms have a linear dependence on the mixing percentage. We calculate the inverse dielectric constant to predict an \textit{ab-initio} mixing percentage. The final hyperfine coupling predictions are close to the experimental values available in the literature. Our results will help to guide future novel experiments on these defects., Comment: 8 pages, 3 figures. Supplementary data (Tables S1-S12) in source

Two-dimensional (2D) layered metal dichalcogenides constitute a promising class of materials for photodetector applications due to their excellent optoelectronic properties. The most common photodetectors, which work on the principle of photoconductive or photovoltaic effects, however, require either the application of external voltage biases or built-in electric fields, which makes it challenging to simultaneously achieve high responsivities across broadband wavelength excitation - especially beyond the material's nominal band gap - while producing low dark currents. In this work, we report the discovery of an intricate phonon-photon-electron coupling - which we term the acoustophotoelectric effect - in SnS$_2$ that facilitates efficient photodetection through the application of 100-MHz-order propagating surface acoustic waves (SAWs). This effect not only reduces the band gap of SnS$_2$, but also provides the requisite momentum for indirect band gap transition of the photoexcited charge carriers, to enable broadband photodetection beyond the visible light range, whilst maintaining pA-order dark currents - remarkably without the need for any external voltage bias. More specifically, we show in the infrared excitation range that it is possible to achieve up to eight orders of magnitude improvement in the material's photoresponsivity compared to that previously reported for SnS$_2$-based photodetectors, in addition to exhibiting superior performance compared to most other 2D materials reported to date for photodetection.

Establishing a data-driven pipeline for the discovery of novel materials requires the engineering of material features that can be feasibly calculated and can be applied to predict a material's target properties. Here we propose a new class of descriptors for describing crystal structures, which we term Robust One-Shot Ab initio (ROSA) descriptors. ROSA is computationally cheap and is shown to accurately predict a range of material properties. These simple and intuitive class of descriptors are generated from the energetics of a material at a low level of theory using an incomplete ab initio calculation. We demonstrate how the incorporation of ROSA descriptors in ML-based property prediction leads to accurate predictions over a wide range of crystals, amorphized crystals, metal-organic frameworks and molecules. We believe that the low computational cost and ease of use of these descriptors will significantly improve ML-based predictions., Comment: 13 pages, accepted in Journal of Cheminformatics

Luminescent solar concentrators (LSCs) are devices that trap a portion of the solar spectrum and funnel it towards photon harvesting devices. The modelling of LSCs at a quantum chemical level however, remains a challenge due to the complexity of exciton and photon dynamic modelling. This study examines singlet exciton dynamics occurring within a typical LSC device. To do this, we use a rejection-free kinetic Monte Carlo method to predict diffusion lengths, diffusion coefficients, substrate anisotropy, and average exciton lifetimes of perylene diimide (PDI) and tetracene based substrates in the low concentration scheme. \textit{Ab initio} rate constants are computed using time-dependant density functional theory based methods. PDI type substrates are observed to display enhanced singlet exciton transport properties when compared to tetracene. Simulations show that substrates with dipole-aligned chromophores are characterised by anisotropic exciton diffusion, with slightly improved transport properties. Finally, a PDI-tetracene substrate is simulated for both disordered and dipole-aligned chromophore configurations. In this multi-dopant substrate transport is predominantly mediated by PDI due to the asymmetry in the transport rates between the two dyes considered. We conclude discussing the properties of multi-dopant substrates and how they can impact the design of next generation LSCs., Comment: 12 pages, 6 figures, 3 tables, Submitted to The Journal of Physical Chemistry

The positively charged nitrogen vacancy (NV+) centre in diamond has been traditionally treated as a dark state due to the experimental lack of an optical signature. Recent computational studies have shown that it is possible for the NV+ defect to have an excited state transition equivalent to that of the negatively charged (NV-) centre, but no PL predictions have been reported so far. We report the first $\mathrm{\textit{ab-initio}}$ calculation showing that the NV+ center presents quantum emission, with zero phonon line at 765 nm and a non-zero transition dipole moment, approximately 4x smaller than the transition dipole moment of NV-. We calculate the energy levels of the multielectron states under time-dependent density functional theory (singlet and triplet E states), and using our recently developed frequency cutoff method, we predict the full PL spectrum. Our results suggest that this state cannot be considered intrinsically 'dark' and charge specific quenching mechanisms should be investigated as the cause of the lack of optical activity in experimental characterizations.

In order to realize the significant potential of optical materials such as metal halides, computational techniques which give accurate optical properties are needed, which can work hand-in-hand with experiments to generate high efficiency devices. In this work a computationally efficient technique based on semiconductor Bloch equations (SBEs) is developed and applied to the material BiSBr. This approach gives excellent agreement with the experimental optical gap, and also agrees closely with the excitonic stabilisation energy and the absorption spectrum computed using the far more computationally demanding \textit{ab initio} Bethe-Salpeter approach. The SBE method is a good candidate for theoretical spectroscopy on large- or low dimensional systems which are too computationally expensive for an \textit{ab initio} treatment., Comment: 8 pages, 3 figures

In this work, we investigate dispersion interactions in a selection of atomic, molecular, and molecule-surface systems, comparing high-level correlated methods with empirically-corrected density functional theory (DFT). We assess the efficacy of functionals commonly used for surface-based calculations, with and without the D3 correction of Grimme. We find that the inclusion of the correction is essential to get meaningful results, but there is otherwise little to distinguish between the functionals. We also present coupled-cluster quality interaction curves for \ce{H2} and \ce{NO2} interacting with large carbon flakes, acting as models for graphene surfaces, using novel absolutely localised molecular orbital based methods. These calculations demonstrate that the problems with empirically-corrected DFT when investigating dispersion appear to compound as the system size increases, with important implications for future computational studies of molecule-surface interactions.

Measuring the photoluminescence of defects in crystals is a common experimental technique for analysis and identification. However, current theoretical simulations typically require the simulation of a large number of atoms to eliminate finite size effects, which discourages computationally expensive excited state methods. We show how to extract the room-temperature photoluminescence spectra of defect centres in bulk from an $\mathrm{\textit{ab-initio}}$ simulation of a defect in small clusters. The finite size effect of small clusters manifests as strong coupling to low frequency vibrational modes. We find that removing vibrations below a cutoff frequency determined by constrained optimization returns the main features of the solid state photoluminescence spectrum. This strategy is illustrated for an NV$^{-}$ defect in diamond, presenting a connection between defects in solid state and clusters; the first vibrationally resolved $\mathrm{\textit{ab-initio}}$ photoluminescence spectrum of an NV$^{-}$ defect in a nanodiamond; and an alternative technique for simulating photoluminescence for solid state defects utilizing more accurate excited state methods., Comment: Accepted for publication in the Journal of Applied Physics

Understanding and controlling exciton transport is a strategic way to enhance the optoelectronic properties of high-performance organic devices. In this article we study triplet exciton migration in crystalline poly($p$-phenylene vinylene) polymer (PPV) using comprehensive electronic structure and quantum dynamical methods. We solve the coupled electron-nuclear dynamics for the triplet energy migrating between two neighboring Frenkel sites in J- and H-aggregate arrangements. From the two-site model we extract key parameters for use with a master-equation approach that allows us to treat nanosize systems where time-dependent Schr\"odinger equation becomes intractable. We calculate the transient exciton density evolution and determine the diffusion constants along the principal crystal axes of the PPV. The triplet diffusion is characterized by two distinctive components: fast intrachain, and slow interchain. At room temperature the interchain diffusion coefficients are found to be $D_a=0.89\cdot10^{-2}$ cm$^2$s$^{-1}$ and $D_b=1.49\cdot10^{-2}$ cm$^2$s$^{-1}$ along the respective $\bar{a}$- and $\bar{b}$-axes, and the intrachain is $D_c=3.03$ cm$^2$s$^{-1}$ along the fast $\bar{c}$-axis. The exceptionally high exciton mobility along the $\pi$-conjugated backbone facilitates rapid triplet migration over long distances. Our results can be utilized in the design of efficient energy conversion and light-emitting devices with desired solid-state properties., Comment: Final version after corrections and improvements

This work presents a method of grouping the electron spinors and the acoustic phonon modes of polar crystals such as metal oxides into an SU(2) gauge theory. The gauge charge is the electron spin, which is assumed to couple to the transverse acoustic phonons on the basis of spin ordering phenomena in crystals such as V$_{2}$O$_{3}$ and VO$_{2}$, while the longitudinal mode is neutral. A generalization the Peierls mechanism is presented based on the discrete gauge invariance of crystals and the corresponding Ward-Takahashi identity. The introduction of a band index violates the Ward-Takahashi identity for interband transitions resulting in a longitudinal component appearing in the upper phonon band. Thus both the spinors and the vector bosons acquire mass and a crystal with an electronic band gap and optical phonon modes results. In the limit that the coupling of bosons charged under the SU(2) gauge group goes to zero, breaking the electron U(1) symmetry recovers the BCS mechanism. In the limit that the neutral boson decouples, a Cooper instability mediated by spin-wave exchange results from symmetry breaking, i.e. unconventional superconductivity mediated by magnetic interactions., Comment: 9 pages, 4 figures, V2 fixes a numbers of errors and typos from a somewhat rushed previous submission

We present a comprehensive study of the electronic structures of 192 configurations of 39 stable, layered, transition-metal dichalcogenides using density-functional theory. We show detailed investigations of their monolayer, bilayer, and trilayer structures' valence-band maxima, conduction-band minima, and band gap responses to transverse electric fields. We also report the critical fields where semiconductor-to-metal phase transitions occur. Our results show that band gap engineering by applying electric fields can be an effective strategy to modulate the electronic properties of transition-metal dichalcogenides for next-generation device applications., Comment: 18 pages, 7 figures

Using an \textit{ab initio} approach based on the GW approximation which includes strong local \textbf{k}-space correlations, the Metal-Insulator Transition of M$_2$ vanadium dioxide is broken down into its component parts and investigated. Similarly to the M$_{1}$ structure, the Peierls pairing of the M$_{2}$ structure results in bonding-antibonding splitting which stabilizes states in which the majority of the charge density resides on the Peierls chain. This is insufficient to drop all of the bonding states into the lower Hubbard band however. An antiferroelectric distortion on the neighboring vanadium chain is required to reduce the repulsion felt by the Peierls bonding states by increasing the distances between the vanadium and apical oxygen atoms, lowering the potential overlap thus reducing the charge density accumulation and thereby the electronic repulsion. The antibonding states are simultaneously pushed into the upper Hubbard band. The data indicate that sufficiently modified GW calculations are able to describe the interplay of the atomic and electronic structures occurring in Mott metal-insulator transitions., Comment: 10 Pages, 7 Figures

Novel physical phenomena emerge in ultra-small sized nanomaterials. We study the limiting small-size-dependent properties of MoS$_{2}$ monolayer rhombic nanoflakes using density-functional theory on structures of size up to Mo$_{35}$S$_{70}$ (1.74~nm). We investigate the structural and electronic properties as functions of the lateral size of the nanoflakes, finding zigzag is the most stable edge configuration, and that increasing size is accompanied by greater stability. We also investigate passivation of the structures to explore realistic settings, finding increased HOMO-LUMO gaps and energetic stability. Understanding the size-dependent properties will inform efforts to engineer electronic structures at the nano-scale.

We report the multi-scale modeling and design of a gate-defined single-electron transistor in a MoS$_{2}$ bilayer. By combining density-functional theory and finite-element analysis, we design a surface gate structure to electrostatically define and tune a quantum dot and its associated tunnel barriers in the MoS$_{2}$ bilayer. Our approach suggests new pathways for the creation of novel quantum electronic devices in two-dimensional materials.

Materials that undergo reversible metal-insulator transitions are obvious candidates for new generations of devices. For such potential to be realised, the underlying microscopic mechanisms of such transitions must be fully determined. In this work we probe the correlation between the energy landscape and electronic structure of the metal-insulator transition of vanadium dioxide and the atomic motions occurring using first principles calculations and high resolution X-ray diffraction. Calculations find an energy barrier between the high and low temperature phases corresponding to contraction followed by expansion of the distances between vanadium atoms on neighbouring sub-lattices. X-ray diffraction reveals anisotropic strain broadening in the low temperature structure's crystal planes, however only for those with spacings affected by this compression/expansion. GW calculations reveal that traversing this barrier destabilises the bonding/anti-bonding splitting of the low temperature phase. This precise atomic description of the origin of the energy barrier separating the two structures will facilitate more precise control over the transition characteristics for new applications and devices., Comment: 11 Pages, 8 Figures

Environmental two-level systems (TLS) have been identified as significant decoherence sources in Josephson junction (JJ) based circuits. For such quantum devices to be functional, the removal or control of the TLS is a necessity. Understanding the microscopic origins of the 'strongly coupled' TLS type is one current path of investigation to that end. The delocalized oxygen model suggests the atomic position of an oxygen atom is spatially delocalized in the oxide forming the JJ barrier. In this report we extend this model from its previous 2+1D construction to a complete 3D description using a Wick-rotated time-dependent Schrodinger equation to solve for time-independent solutions in three dimensions. We compute experimentally observable parameters for phase qubits and compare the results to the 2+1D framework. We devise a Voronoi classification scheme to investigate oxygen atoms delocalizing within strained and non-strained crystalline lattices, as well as realistic atomic positions a JJ amorphous tunnel barrier constructed in previous density functional studies., Comment: 9 Pages, 8 Figures

The enabling of scientific experiments that are embarrassingly parallel, long running and data-intensive into a cloud-based execution environment is a desirable, though complex undertaking for many researchers. The management of such virtual environments is cumbersome and not necessarily within the core skill set for scientists and engineers. We present here Chiminey, a software platform that enables researchers to (i) run applications on both traditional high-performance computing and cloud-based computing infrastructures, (ii) handle failure during execution, (iii) curate and visualise execution outputs, (iv) share such data with collaborators or the public, and (v) search for publicly available data., Comment: Preprint, ICSE 2015

A common method of adjusting the metal-insulator transition temperature of M$_{1}$ VO$_{2}$ is via disruption of the Peierls pairing by doping, or inputting stress or strain. However, since adding even small amounts of dopants will change the band structure, it is unclear how doped VO$_{2}$ retains its insulating character observed in experiments. While strong correlations may be responsible for maintaining a gap, theoretical evidence for this has been very difficult to obtain due to the complexity of the many-body problem involved. In this work we use GW calculations modified to include strong local $\textbf{k}$-space interactions to investigate the changes in band structure from tungsten doping. We find that the combination of carrier doping and the experimentally observed structural defects introduced by inclusion of tungsten are consistent with a change from band-like to Mott-insulating behavior., Comment: 7 pages, 4 Figures

It is demonstrated that the signatures of the Hubbard Model in the strongly interacting regime can be simulated by modifying the screening in the limit of zero wavevector in Projector-Augmented Wave GW calculations for systems without significant nesting. This modification, when applied to the Mott insulator CuO, results in the opening of the Mott gap by the splitting of states at the Fermi level into upper and lower Hubbard bands, and exhibits a giant transfer of spectral weight upon electron doping. The method is also employed to clearly illustrate that the M$_{1}$ and M$_{2}$ forms of vanadium dioxide are fundamentally different types of insulator. Standard GW calculations are sufficient to open a gap in M$_{1}$ VO$_{2}$, which arise from the Peierls pairings filling the valence band, creating homopolar bonds. The valence band wavefunctions are stabilized with respect to the conduction band, reducing polarizability and pushing the conduction band eigenvalues to higher energy. The M$_{2}$ structure however opens a gap from strong on-site interactions; it is a Mott insulator., Comment: 14 pages, 9 figures

The microscopic structure of ultra-thin oxide barriers often plays a major role in modern nano-electronic devices. In the case of superconducting electronic circuits, their operation depends on the electrical non-linearity provided by one or more such oxide layers in the form of ultra-thin tunnel barriers (also known as Josephson junctions). Currently available fabrication techniques manufacture an amorphous oxide barrier, which is attributed as a major noise source within the device. The nature of this noise is currently an open question and requires both experimental and theoretical investigation. Here, we present a methodology for constructing atomic scale computational models of Josephson junctions using a combination of molecular mechanics, empirical and ab initio methods. These junctions consist of ultra-thin amorphous aluminium-oxide layers sandwiched between crystalline aluminium. The stability and structure of these barriers as a function of density and stoichiometry are investigated, which we compare to experimentally observed parameters, Comment: 7 pages, 4 figures, 1 table. For special issue dedicated to Prof. Ian Snook

The effects of the spin and lattice degrees of freedom on the electronic structure of M1 vanadium dioxide are explored using a quasiparticle description. Contraction of the inter-vanadium spacing of the Peierls pairings stabilizes bonding electrons, reducing polarizability and thus widening the band gap. Increases of this inter-vanadium spacing of as little as 1 \% reduce this stabilization, resulting in a crossover to ferromagnetic behaviour accomplished by half of the valence electrons inhabiting the leading edge of the conduction band in localized atomic-like orbitals, as the antiferromagnetic order becomes unstable with respect to rearrangement according to Hund's first rule. The data indicates that the magnetic structure of M1 vanadium dioxide may be finely balanced; the antiferromagnetic order is a consequence of the overlapping nuclear potential of the Peierls pairs, and input which disrupts this will have a significant effect on magnetic properties., Comment: 8 Pages, 10 Figures

Identifying the microscopic origins of decoherence sources prevalent in Josephson junction based circuits is central to their use as functional quantum devices. Focussing on so called "strongly coupled" two-level defects, we construct a theoretical model using the atomic position of the oxygen which is spatially delocalised in the oxide forming the Josephson junction barrier. Using this model, we investigate which atomic configurations give rise to two-level behaviour of the type seen in experiments. We compute experimentally observable parameters for phase qubits and examine defect response under the effects of applied electric field and strain., Comment: 13 pages, 18 figures

The Thomas-Fermi-Dirac (TFD) approximation and an sp3d5s* tight binding method were used to calculate the electronic properties of a delta-doped phosphorus layer in silicon. This self-consistent model improves on the computational efficiency of "more rigorous" empirical tight binding and ab initio density functional theory models without sacrificing the accuracy of these methods. The computational efficiency of the TFD model provides improved scalability for large multi-atom simulations, such as of nanoelectronic devices that have experimental interest. We also present the first theoretically calculated electronic properties of a delta-doped phosphorus layer in germanium as an application of this TFD model., Comment: 11 pages, 7 figures

One of the key problems facing superconducting qubits and other Josephson junction devices is the decohering effects of bi-stable material defects. Although a variety of phenomenological models exist, the true microscopic origin of these defects remains elusive. For the first time we show that these defects may arise from delocalisation of the atomic position of the oxygen in the oxide forming the Josephson junction barrier. Using a microscopic model, we compute experimentally observable parameters for phase qubits. Such defects are charge neutral but have non-zero response to both applied electric field and strain. This may explain the observed long coherence time of two-level defects in the presence of charge noise, while still coupling to the junction electric field and substrate phonons., Comment: 5 pages, 4 figures. This version streamlines presentation and focuses on the 2D model. Also fixed embarrassing typo (pF -> fF)

The differences in energy between electronic bands due to valley splitting are of paramount importance in interpreting transport spectroscopy experiments on state-of-the-art quantum devices defined by scanning tunneling microscope lithography. We develop a plane-wave density functional theory description of these systems which is size-limited due to computational tractability. We then develop a less resource-intensive alternative via localized basis functions, retaining the physics of the plane-wave description, and extend this model beyond the capability of plane-wave methods to determine the ab initio valley splitting of well-isolated \delta-layers. In obtaining agreement between plane-wave and delocalized methods, we show that the valley splitting has been overestimated in previous ab initio calculations by more than 50%.