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Existence of quasi-static negative capacitance (QSNC) was proposed from an interpretation of the widely accepted Landau model of ferroelectrics. However, many works showed not to support the QSNC theory, making it controversial. In this letter we show the Landau model when used together with transition-state-theory, can connect various models including first-principles, Landau, Preisach and nucleation limited switching while it does not predict the existence of QSNC.

As CMOS structures are envisioned to host silicon spin qubits, and for co-integrating quantum systems with their classical control blocks, the cryogenic behaviour of such structures need to be investigated. In this paper we characterize the electrical properties of Gate-All-Around (GAA) n-MOSFETs Si nanowires (NWs) from room temperature down to 1.7 K. We demonstrate that those devices can operate both as transistor and host quantum dots at cryogenic temperature. In the classical regime of the transistor we show improved performances of the devices and in the quantum regime we show systematic quantum dots formation in GAA devices., Comment: 4 pages, 4 figures