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The problem that this study addresses is to understand how microwave radiation is able to degrade genomic DNA of E. coli. In addition, a comparative study was made to evaluate the suitability of a high-throughput automated electrophoresis platform for quantifying the DNA degradation under microwave radiation. Overall, this study investigated the genomic DNA degradation of E. coli under microwave radiation using automated gel electrophoresis. To examine the viable organisms and degradation of genomic DNA under microwave exposure, we used three methods: (1) post-microwave exposure, where E. coli was enumerated using modified mTEC agar method using membrane filtration technique; (2) extracted genomic DNA of microwaved sample was quantified using the Qubit method; and (3) automated gel electrophoresis, the TapeStation 4200, was used to examine the bands of extracted DNA of microwaved samples. In addition, to examine the impacts of microwaves, E. coli colonies were isolated from a fecal sample (dairy cow manure), these colonies were grown overnight to prepare fresh E. coli culture, and this culture was exposed to microwave radiation for three durations: (1) 2 min; (2) 5 min; and (3) 8 min. In general, Qubit values (ng/µL) were proportional to the results of automated gel electrophoresis, TapeStation 4200, DNA integrity numbers (DINs). Samples from exposure studies (2 min, 5 min, and 8 min) showed no viable E. coli. Initial E. coli levels (at 0 min microwave exposure) were 5 × 108 CFU/mL, and the E. coli level was reduced to a non-detectable level within 2 min of microwave exposure. The relationships between Qubit and TapeStation measurements was linear, except for when the DNA level was lower than 2 ng/µL. In 8 min of microwave exposure, E. coli DNA integrity was reduced by 61.7%, and DNA concentration was reduced by 81.6%. The overall conclusion of this study is that microwave radiation had a significant impact on the genomic DNA of E. coli, and prolonged exposure of E. coli to microwaves can thus lead to a loss of genomic DNA integrity and DNA concentrations.

A 300 GHz frequency synthesizer incorporating a triple-push VCO with Colpitts-based active varactor (CAV) and a divider with three-phase injection is introduced. The CAV provides frequency tunability, enhances harmonic power, and buffers/injects the VCO fundamental signal from/to the divider. The locking range of the divider is vastly improved due to the fact that the three-phase injection introduces larger allowable phase change and injection power into the divider loop. Implemented in 90 nm SiGe BiCMOS, the synthesizer achieves a phase-noise of –77.8 dBc/Hz (–82.5 dBc/Hz) at 100 kHz (1 MHz) offset with a crystal reference, and an overall locking range of 280.32–303.36 GHz (7.9%).

A highly efficient push-push voltage-controlled oscillator (VCO) with a new inductive frequency tuning topology for (sub) terahertz frequencies is presented. The tuning technique is based on a variable inductance seen at the emitter node of a base-degenerated transistor. The variable inductor exhibits high quality factor and high tuning range due to the tunable transistor transconductance via bias current. Fabricated in a 0.13-$\mu\hbox{m} $ SiGe BiCMOS process, the VCO achieves a tuning range of 3.5% and an output power of $-$7.2 dBm at 201.5 GHz. The dc power consumption of the VCO is 30 mW, resulting in a high dc to RF power efficiency of 0.6% and a figure of merit $({\rm FoM}-{T})$ of $-$ 165, which is the highest FoM for any silicon-based VCO reported to date at this frequency range. To demonstrate the functionality of the tuning technique, three VCO prototypes at different oscillation frequencies, including one operating in the 222.7-229-GHz range, are implemented and measured. © 1963-2012 IEEE.