34 results on '"Voelskow, M."'
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2. Buckling Stabilization and Stress Reduction in SiC on Si by i-FLASiC Processing
3. Structure and Lattice Location of Ge Implanted 4H-SiC
4. SiGe Heterostructures-on-Insulator Produced by Ge+-Ion Implantation and Subsequent Hydrogen Transfer
5. Crystallization of InSb Phase Near the Bonding Interface of Silicon-on-Insulator Structure
6. Nanoscaled Silicon Based Heterostructures Formed by Interface Mediated Endotaxy
7. Ion beam synthesis of 4H-(Si1–xC1–y)Gex +y solid solutions
8. High Dose High Temperature Ion Implantation of Ge into 4H-SiC
9. Epitaxial SiC Formation at the SiO2/Si Interface by C+ Implantation into SiO2 and Subsequent Annealing
10. A Thermal Model for Flash Lamp Annealing of 3C-SiC/Si Multi-Layer Systems (i-FLASiC)
11. Ion beam synthesis of 3C–(Si1–xC1–y)Gex+y solid solutions
12. Modelling and Regrowth Mechanisms of Flashlamp Processing of SiC-on-Silicon Heterostructures
13. Flash Lamp Supported Deposition of 3C-SiC (FLASiC) – a Promising Technique to Produce High Quality Cubic SiC Layers
14. Flash lamp annealing with millisecond pulses for ultra-shallow boron profiles in silicon
15. Blue-Green Photoluminescence from Silicon Dioxide Films Containing Ge+ Nanocrystals Formed under Conditions of High Hydrostatic Pressure Annealing
16. Theoretical and experimental investigations of defect evolution in silicon carbide during N+ and Al+ ion implantation taking into account internal stress fields
17. Investigation of Al-implanted 6H- and 4H-SiC layers after fast heating rate annealings
18. The beneficial role of flash lamp annealing on the epitaxial growth of the 3C-SiC on Si
19. The influence of the implantation sequence on the (SiC)1−x(AlN)xformation
20. Crystallization and surface erosion of SiC by ion irradiation at 500^oC
21. Dwell-time effects in focused ion beam synthesis of cobalt disilicide: reflectivity measurements
22. A novel (SiC)~1~-~x(AIN)~x compound synthesized using ion beams
23. Dwell-time dependence of the defect accumulation in focused ion beam synthesis of CoSi~2
24. Ion Beam Doping of 6H-SiC for High Concentration p-Type Layers
25. Ion beam synthesis by tungsten-implantation into 6H-silicon carbide
26. Epitaxial lateral overgrowth of amorphous CVD silicon films induced by ion irradiation
27. Flash lamp annealing of ion implanted silicon
28. Radiation damage and annealing behaviour of Ge^+-implanted SiC
29. Ion Beam Synthesis: A Novel Method of Producing (SiC)1-x(AIN)x Layers
30. A Computational Model for the Formation of (SiC)1-x(AIN)x Structures by Hot, High-Dose N+ and Al+ Co-Implants in 6H-SiC
31. Investigation of Ion-Impantation Induced Damage in 6H-SiC by RSB/C and PAS
32. Characterisation of defects in ion implanted SiC by slow positron implantation spectroscopy and Rutherford backscattering
33. Ion-beam-induced epitaxial crystallisation (IBIEC) of amorphous silicon layers produced by chemical vapour deposition
34. Advanced Heterostructure Si-InSb on Insulator Formed by Bonding of Hydrogen Transferred Si Layer and Implanted SiO2 Film
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