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ABSTRACTSilicon-Carbide (SiC) technology presents several advantages over silicon for power electronics applications, such as lower losses. However, SiC technology is not totally mature, and some reliability problems remain. This paper studies the robustness of SiC MOSFETs in the case of diode-less applications and the associated phenomena, such as gate oxide degradation. Several devices were stressed under conditions of inductive switching and inverse current conduction. These devices were periodically characterized. As a result, a threshold voltage shift was observed in the MOSFET, with a dependence on the duty cycle of the transistor. On the contrary, no significant degradation of the internal P-N junction of the transistor was observed.

To investigate whether global and regional -amyloid (A) burden as measured with 11C Pittsburgh compound B (PIB) PET is associated with hippocampal atrophy characterized using MRI in healthy controls and patients with amnestic mild cognitive impairment (aMCI) or Alzheimer disease (AD).