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A new method for reducing the cost and the fabrication time of source material required for SiC crystal growth has been proposed through a heat treatment of recycled powder bulk in this study. The actual crystal growth with using a conventional powder and a recycled powder bulk source has been performed under identical growth condition and then systematically compared in terms of the crystal quality. With applying the recycled powder bulk for SiC crystal growth, similar growth results were obtained as a result grown by conventional high-purity powder source. In terms of crystal defects, slight improvement was observed when high purity recycled powder bulk source was applied.

A modified process condition has been proposed for the growth of high-quality 6-inch 4H-SiC single crystal. Temperature gradient (dT[°C] = Tbottom-Tupper) was controlled by changing coil position in order to investigate the effect of the temperature gradient on the SiC crystal quality. SiC ingot surface and etch pit density (EPD) of etched SiC wafer were investigated according to different dT conditions at the initial stage of SiC crystal growth. The surface of SiC crystal ingots grown with different dT for 10h were observed by OM and etched SiC wafers were prepared from SiC crystal ingots after main growth step for 100h. Different dT conditions in the initial growth stage resulted in dramatically different surface images and the crystal quality evaluated by EPD.

Reticulated porous ceramics feature a three-dimensional network structure with high porosity and permeability simultaneously. However, generally, the compressive strength capabilities of reticulated porous ceramics are low, which severely limits applications of these materials. To increase the compressive strength of reticulated porous ceramics, it is necessary to coat the strut walls of the polyurethane foam completely with alumina slurry to form a thin ceramic coating layer after optimizing the processing conditions, specifically the alumina slurry composition and the coating condition. Although it remains challenging to improve the compressive strength of reticulated porous ceramics, thus far efforts to do so are underreported. Therefore, in this study, we attempt to optimize the composition (thickener, dispersant, and binder) of the alumina slurry. Among various types of reticulated porous ceramics, we focus on reticulated porous alumina here. Although there are numerous studies regarding porous alumina, which is already widely used, investigations of reticulated porous alumina are rare. In this study, we determined the optimized processing conditions to improve the compressive strength of reticulated porous alumina. These conditions, specifically the composition of the alumina slurry and the pore density of the polyurethane foam, are discussed.

Here, we report an efficient inverted red indium phosphide (InP) comprising QD (InP/ZnSe/ZnS, core/shell structure) light-emitting diode (QLED) by modulating an interfacial contact between the electron transport layer and emissive InP-QDs and applying self-aging approach. The red InP-QLED with optimized interfacial contact exhibits a significant improvement in maximum external quantum efficiency and current efficiency from 4.42 to 10.2% and 4.70 to 10.8 cd/A, respectively, after 69 days of self-aging, which is an almost 2.3-fold improvement compared to the fresh device. The analysis indicates the consecutive reduction in electron injection and accumulation in the emissive QD due to changes in the conduction band minimum of ZnMgO (0.1 eV after 10 days of storage) through a downward vacuum-level shift according to the aging times. During the device aging periods, the oxygen vacancy of ZnMgO reduces, which leads to lower the conductivity of ZnMgO. As a result, charge balance of the device is improved with the suppression of exciton quenching at the interface of ZnMgO and InP-QD.

Two SiC crystals were grown using SiC source powder with different level of purity and then the effect of the purity of SiC source materials on the final electrical properties has been systematically observed. Furthermore, the variation of vanadium amount according to the growth direction of vanadium doped semi-insulated SiC single crystals has been investigated. The quality of SiC crystal grown using SiC source powder with higher purity was definitely better than SiC crystal with lower purity. SiC crystals having an average resistivity value of about 1×1010 Ωcm were successfully obtained. In the result of COREMA measurement, the use of high purity SiC powder was revealed to obtain wafers with better uniformity in resistivity value.

The present research was focused on the effect of porous graphite plate in TaC-coated crucible on crystal quality and resistivity of semi-insulating SiC crystals. Two SiC crystals grown with/without porous graphite plate in TaC-coated crucible were systematically compared. 6H-SiC polytype was obtained on both crystals regardless of porous graphite plate. The quality of SiC crystal grown using porous graphite plate placed in the TaC-coated crucible was slightly better than SiC crystal without porous graphite plate. SiC crystals having an average resistivity value of about 1×1010 Ωcm were obtained. In the result of COREMA measurement, the use of porous graphite plate tends to obtain wafers with better uniformity in resistivity value.

4H-SiC single crystal was successfully grown with source powder modified by the pretreatment process in order to improve polytype stability of SiC crystal. To increase C/Si ratio in SiC source powder, SiC source powder was mixed with liquid carbon source and then pre-heated at 1200°C. SiC single crystal grown with modified source powder exhibited complete 4H polytype and the crystal quality of SiC crystal grown by modified source power was definitely better than conventional source powder

We demonstrate a highly efficient red cadmium‐free quantum dot light‐emitting diode (QLED) comprising inverted structure and ZnO:Mg nanoparticles as an electron transport layer. Fabricated QLED reveals maximum external quantum efficiency of 4.46% and more than two‐fold increase in efficiency (10.17%) after aging for several days.

The modified crucible in the top seeded solution growth (TSSG) method was proposed to get the stable growth condition and the enhanced growth rate. The temperature gradient and the distribution of dissolved carbon in the solvent were obtained by numerical approaches. Compared simulation results and experiment, we investigated the region where is the most of dissolved carbon and it is supplied to the seed through what path. The cross-sectional samples of crucibles and grown SiC crystals were systematically analyzed to investigate the effect of the crucible modification on SiC crystal growth.

The crucible design having a stepped wall was introduced for increasing the growth rate of SiC crystal without metal addition in top-seeded solution growth (TSSG) method. The numerical simulation confirmed that new crucible design to increase the solvent-crucible interface could definitely change the temperature distribution and increase the carbon concentration. The simulation result, SiC single crystals were grown with Si solvent at 1900°C using a normal crucible and a stepped crucible to investigate the effect of crucible design having a stepped wall. Grown SiC layers were analyzed using Optical microscopy and Raman spectra. The growth rate in the stepped crucible was finally 66um/h observed.

Background To assess the radiosensitivity of liver tumors harboring different genetic mutations, mouse liver tumors were generated in vivo through the hydrodynamic injection of clustered regularly interspaced short palindromic repeat/caspase 9 (CRISPR/Cas9) constructs encoding single-guide RNAs (sgRNAs) targeting Tp53, Pten, Nf1, Nf2, Tsc2, Cdkn2a, or Rb1.Methods The plasmid vectors were delivered to the liver of adult C57BL/6 mice via hydrodynamic tail vein injection. The vectors were injected into 10 mice in each group. Organoids were generated from mouse liver tumors. The radiation response of the organoids was assessed using an ATP cell viability assay.Results The mean survival period of mice injected with vectors targeting Nf2(4.8 months) was lower than that of other mice. Hematoxylin and eosin staining, immunohistochemical (IHC) staining, and target sequencing analyses revealed that mouse liver tumors harbored the expected mutations. Tumor organoids were established from mouse liver tumors. Histological evaluation revealed marked morphological similarities between the mouse liver tumors and the generated tumor organoids. Moreover, IHC staining indicated that the parental tumor protein expression pattern was maintained in the organoids. The results of the ATP cell viability assay revealed that the tumor organoids with mutated Nf2were more resistant to high-dose radiation than those with other gene mutations.Conclusions This study developed a radiation response assessment system for mouse tumors with mutant target genes using CRISPR/Cas9 and organoids. The Tp53and Ptendouble mutation in combination with the Nf2mutation increased the radiation resistance of tumors. The system used in this study can aid in elucidating the mechanism underlying differential intrinsic radiation sensitivity of individual tumors.