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4H-SiC Crystal Growth Using Recycled SiC Powder Source

Authors :
Lee, Seung Jun
Lee, Chae Young
Choi, Jung Woo
Park, Jong Hwi
Kim, Jung Gyu
Ku, Kap Ryeol
Na, Jun Hyuck
Lee, Won Jae
Source :
Diffusion and Defect Data Part B: Solid State Phenomena; August 2024, Vol. 362 Issue: 1 p47-51, 5p
Publication Year :
2024

Abstract

A new method for reducing the cost and the fabrication time of source material required for SiC crystal growth has been proposed through a heat treatment of recycled powder bulk in this study. The actual crystal growth with using a conventional powder and a recycled powder bulk source has been performed under identical growth condition and then systematically compared in terms of the crystal quality. With applying the recycled powder bulk for SiC crystal growth, similar growth results were obtained as a result grown by conventional high-purity powder source. In terms of crystal defects, slight improvement was observed when high purity recycled powder bulk source was applied.

Details

Language :
English
ISSN :
10120394
Volume :
362
Issue :
1
Database :
Supplemental Index
Journal :
Diffusion and Defect Data Part B: Solid State Phenomena
Publication Type :
Periodical
Accession number :
ejs67556931
Full Text :
https://doi.org/10.4028/p-Mc7lyF