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Integrated photonic platforms have proliferated in recent years, each demonstrating its unique strengths and shortcomings. Given the processing incompatibilities of different platforms, a formidable challenge in the field of integrated photonics still remains for combining the strengths of different optical materials in one hybrid integrated platform. Silicon carbide is a material of great interest because of its high refractive index, strong second- and third-order nonlinearities, and broad transparency window in the visible and near-infrared range. However, integrating silicon carbide (SiC) has been difficult, and current approaches rely on transfer bonding techniques that are time-consuming, expensive, and lacking precision in layer thickness. Here, we demonstrate high-index amorphous silicon carbide (a-SiC) films deposited at 150 °C and verify the high performance of the platform by fabricating standard photonic waveguides and ring resonators. The intrinsic quality factors of single-mode ring resonators were in the range of Qint = (4.7-5.7) × 105 corresponding to optical losses between 0.78 and 1.06 dB/cm. We then demonstrate the potential of this platform for future heterogeneous integration with ultralow-loss thin SiN and LiNbO3 platforms., ImPhys/Esmaeil Zadeh group, QN/Kavli Nanolab Delft, EKL Equipment, ImPhys/Pereira group, QN/Groeblacher Lab

Recent developments in nanofabrication have opened opportunities for strong light-matter interactions that can enhance optical nonlinearities, both classical and non-classical, for applications such as optical computing, quantum communication, and quantum computing. However, the challenge lies in integrating these optical nonlinearities efficiently and practically with fiber-based and silicon-based photonic circuits on a large scale and at low power. In this thesis, we aimed to achieve this integration of classical and quantum optical nonlinearities with fiber-based and silicon-based photonic circuits.For classical optical applications, optical bistability is a well-researched nonlinear optical phenomenon that has hysteresis in the output light intensity, resulting from two stable electromagnetic states. This can be utilized in various applications such as optical switches, memories, and differential amplifiers. However, integrating these applications on a large scale requires low-power optical nonlinearity, fast modulation speeds, and photonic designs with small footprints that are compatible with fiber optics or silicon photonic circuits. Thermo-optic devices are an effective means of producing optical bistability through thermally induced refractive index changes caused by optical absorption. The materials used must have high absorption coefficients and strong thermo-optic effects to realize low-power optical bistability. For this purpose, we choose high-density semiconductor quantum dots as the material platform and engineer nanobeam photonic crystal structures that can efficiently be coupled to an optical fiber while achieving low-power thermo-optical bistability. For applications that require non-classical nonlinearities such as quantum communication and quantum computing, single photons are promising carriers of quantum information due to their ability to propagate over long distances in optical fibers with extremely low loss. However, the efficient coupling

A prototype of hybrid-integrated monolithic active-matrix blue/red dual-color micro-LED micro-display was demonstrated by flip-chip bonding of GaN-on-Si blue micro-LED array and AlGaInP red micro-LED array. This integration method is promising for high brightness, high color performance micro-LED micro-display application in the future.

[EN] We report recent advances in photonic-electronic integration developed in the European research project L3MATRIX. The aim of the project was to demonstrate the basic building blocks of a co-packaged optical system. Two-dimensional silicon photonics arrays with 64 modulators were fabricated. Novel modulation schemes based on slow light modulation were developed to assist in achieving an efficient performance of the module. Integration of DFB laser sources within each cell in the matrix was demonstrated as well using wafer bonding between the InP and SOI wafers. Improved semiconductor quantum dot MBE growth, characterization and gain stack designs were developed. Packaging of these 2D photonic arrays in a chiplet configuration was demonstrated using a vertical integration approach in which the optical interconnect matrix was flip-chip assembled on top of a CMOS mimic chip with 2D vertical fiber coupling. The optical chiplet was further assembled on a substrate to facilitate integration with the multi-chip module of the co-packaged system with a switch surrounded by several such optical chiplets. We summarize the features of the L3MATRIX co-package technology platform and its holistic toolbox of technologies to address the next generation of computing challenges.

The hybrid integration of small-scale wind and solar energy conversion systems can be used for on- and off-grid applications. This paper investigates a stand-alone off-grid application of a hybrid small-scale wind turbine and photovoltaic (PV) cell microgrid to supply houses in rural Iraq far from the utility grid. Experimental investigations were performed to measure wind speed and solar radiation, as well as the DC voltage in the rectifier section of a small-scale permanent magnet synchronous generator (PMSG) wind turbine and the DC voltage in a PV cell for 24 hours. The results showed that using a small-scale hybrid wind and solar generating system for off-grid applications in Iraq is possible if the components are equipped with proper charge controllers that perform maximum power point tracking (MPPT) during wind speed and solar radiation fluctuations. © Published under licence by IOP Publishing Ltd.

Scalable quantum photonics require efficient single-photon emitters as well as low-loss reconfigurable photonic platforms that connect and manipulate these single photons. Quantum dots are excellent sources of on-demand single photons and can act as stable quantum memories. Therefore, integration of quantum dots with photonic platforms is crucial for many applications in quantum information processing. In this thesis, we first describe hybrid integration of InAs quantum dots hosted in InP to silicon photonic waveguides. We demonstrate an efficient transition of quantum emission to silicon. Quantum nature of the emission is confirmed through photon correlation measurements. Secondly, we present a micro-disk resonator device based on silicon photonics that enables on-chip filtering and routing of single photons generated by quantum dots. The tunability of silicon photonics decreases at low temperatures due to “carrier freeze-out”. Because of a strong electro-optic effect in lithium niobate, this material is the ideal platform for reconfigurable photonics, even at cryogenic temperatures. To this end, we demonstrate integration of quantum dots with thin-film lithium niobate photonics promising for active switching and modulating of single photons. More complex quantum photonic devices require multiple identical single-photon emitters on the chip. However, the transition wavelength of quantum dots varies because of the slightly different shape and size of each dot. To address this hurdle, we propose and characterize a quantum dot device located in an electrostatic field. The resonance wavelength of the quantum dot emission is tuned up to 8 nm, more than one order of magnitude greater than the transition linewidth, opening the possibility of tuning multiple quantum dots in resonance with each other. Finally, we discuss the application of a single quantum dot strongly coupled to a nanophotonic cavity as an efficient medium for non-linear phenomenon of optical amplification

Attributed to its advantages of super mechanical flexibility, very low-temperature processing, and compatibility with low cost and high throughput manufacturing, organic thin-film transistor (OTFT) technology is able to bring electrical, mechanical, and industrial benefits to a wide range of new applications by activating nonflat surfaces with flexible displays, sensors, and other electronic functions. Despite both strong application demand and these significant technological advances, there is still a gap to be filled for OTFT technology to be widely commercially adopted. This paper provides a comprehensive review of the current status of OTFT technologies ranging from material, device, process, and integration, to design and system applications, and clarifies the real challenges behind to be addressed.

In this dissertation, we have explored the use of a highly anisotropic film, porous anodic aluminum oxide (AAO) for electronic and MEMS applications. In the first part, AAO templates integrated with ferromagnetic material were studied for spiral inductors as a magnetic core. In the second part, the applications of AAO as a structure material, a mold for electroforming, and a sacrificial layer for MEMS applications were demonstrated. There is a strong demand for high performance and quality spiral inductors for radio frequency integrated circuits (RFIC). For this purpose, ferromagnetic materials are integrated into the spiral inductors to improve their performance and miniaturize their size. However, spiral inductors with ferromagnetic cores suffer from poor performance at high frequencies due to ferromagnetic resonance effect and eddy current loss occurrence in the layer of ferromagnetic materials. Since AAO templates are self-laminated and patterned, these drawbacks are solved by integration of ferromagnetic materials into the nanopores of AAO templates. By using nickel electroplated AAO templates as a magnetic core, we presented 21% enhancement of inductance value at 5 GHz with a quality factor of 14.48. High precision, high aspect ratio structures are needed for a variety of microelectromechanical systems (MEMS) applications. The most common technology for producing high aspect ratio structures for MEMS is deep reactive ion etching (DRIE). Despite the successes of the DRIE process for MEMS applications, it has several significant shortcomings which limit its adoption for many microstructure applications. The DRIE process is expensive, time consuming, requiring expensive dedicated etching equipment, and primarily useful for etching structures in silicon, making it unlikely to be used for non-silicon applications. Other technologies, such as LIGA and SU-8 are highly specialized, and while they can be used for making simple structures, they are generally not useful

In this thesis, we present a graphical computer-aided design (CAD) environment for the design, analysis and layout of printed electronic batteries in the first phase and the parasitic extraction of the connecting wires in the second phase. The primary motivation of our work is that this prototyping software tool so far does not exist. Our tool has been integrated within the existing CAD tool which allows quick prototyping and simplifies the interface between the system designer and the device manufacturer. This tools supports the schematic and layout entry, rule checking and netlist generation. The first phase of the device synthesis modelling is based on Enfucell printed batteries, by which using the CAD tool, the shape of the battery is optimized and designed to fit the product and is able to simulate the performance during the optimization, whereas the second phase is the parasitic extraction using an extracting tool named fasthenry, which is integrated to our CAD tool to extract unwanted resistance and inductance within the shared wires between the battery and other devices. We believe that the availability of this tool is useful to the CAD community for novel ideas in the circuit design for flexible hybrid electronics., +46764354255, +46722694942

In dieser Arbeit wird das Stickstoff-Fehlstellenzentrum (NV Zentrum) in Diamant als ein solcher Einzelphotonenemitter untersucht. Durch Benutzung eines hybriden Ansatzes werden hier NV Zentren in Diamantnanopartikeln in photonische Strukturen integriert. Zuerst wird eine aufnehmen-und-ablegen-Nanomanipulationstechnik mittels eines Rasterkraftmikroskops verwendet um einzelne NV Zentren an eine photonische Kristallkavität und eine optische Faser zu koppeln. Durch Kopplung an die photonische Kristallkavität wird die Emission der Nullphononenlinie des NV Zentrums um den Faktor 12.1 erhöht und durch Kopplung an die optische Faser entsteht eine direkt gekoppelte Einzelphotonenquelle hoher effektiver numerischer Apertur. Durch Kopplung an plamonische Wellenleiter können einzelne Oberflächenplasmon-Polaritonen nachgewiesen werden. Zweitens wird ein anderer Ansatz, die Entwicklung eines hybriden Materials, verfolgt. Hier sind die Nanodiamanten, anstatt sie auf die Strukturen von Interesse zu legen, von Anfang in dem Material enthalten, aus dem die Strukturen hergestellt werden. Mittels direktem Zweiphotonen-Laserschreiben ist es dann möglich, Kombinationen aus chipintegrierten Wellenleitern, Resonatoren und Einzelphotonenemittern zu zeigen. Um mehr über die Dynamik von NV Zentren in Nanodiamant zu erfahren und Wege zu ihrer Verbesserung zu finden, wird die Dynamik der Nullphononenlinie des NV Zentrums mittels eines Photonenkorrelationsinterferometers untersucht. Zusätzlich zu Techniken zur Herstellung photonischer und plasmonischer Strukturen werden auch Methoden zu ihrer Charakterisierung benötigt. Hier für kann es ausgenutzt werden, dass das NV Zentrum weiter nicht nur ein Einzelphotonenemitters ist, sondern es ebenso als Sensor verwendet werden kann. Das NV Zentrum wird hier verwendet, um die lokale optische Zustandsdichte in einem Rastersondenverfahren zu messen, was die Technik der dreidimensionalen Quantenemitter Fluoreszenzlebensdauermikroskopie einführt., In this thesis, one of such single photon emitters, the nitrogen vacancy centre (NV centre) in diamond, will be examined. By using different hybrid approaches, NV centres in diamond nanoparticles are integrated into photonic structures. Firstly, using a pick-and-place nanomanipulation technique with an atomic force microscope, a single NV centre is coupled to a photonic crystal cavity and an optical fibre. Coupling to the photonic crystal cavity results in an enhancement of the NV centre''s zero phonon line by a factor of 12.1 and coupling to the fibre yields a directly coupled single photon source with an effective numerical aperture of 0.82. By coupling to plasmonic waveguides, the signature of single surface plasmon polaritons is found. Secondly, instead of placing the nanodiamonds on the structures of interest, a hybrid material where the emitters are incorporated is used. With two-photon direct laser writing, on-chip integration and combination of waveguides, resonators, and single photon emitters is demonstrated. In order to learn more on the dynamics of NV centre in nanodiamonds and find ways for improvements, the dynamics of the ultra-fast spectral diffusion of the NV centre''s zero phonon line are investigated using a photon correlation interferometer. In addition to techniques for the fabrication of photonic and plasmonic structures, also methods for their characterisation are needed.For this, it can be exploited that the NV centre also is not only a single photon emitter, but can also be employed as a sensor. Here, the NV centre is used to measure the local density of optical states in a scanning probe experiment, establishing the technique of three-dimensional quantum emitter fluorescence lifetime imaging.

A 2 GHz oscillator based on a solidly mounted AlN thin-film bulk acoustic resonator (TFBAR) is reported. The oscillator is realised as a silicon-on-silicon multi-chip module (MCM) where all passive elements, including the TFBAR, are monolithically integrated on a high-resistivity silicon (HRS) carrier. SiGe transistors are flip-chip mounted on the MCM carrier. Measurements of the oscillators reveal a best phase-noise of -125 dBc/Hz at 100 kHz offset.

Oscillators based on AlN thin-film bulk acoustic resonators are designed, fabricated and measured. The circuits are realised as silicon-on-silicon multichip modules where SiGe transistors are flip-chip mounted on a novel carrier substrate which includes monolithically integrated resonators and passive components. The paper describes the development and processing of the carrier substrate and resonators, as well as the development of the oscillator circuits. The oscillators operate at 2 GHz. Measurements of the oscillators reveal a lowest phase-noise of -125 dBc/Hz at 100 kHz offset., WISENET

Wafer bonding with intermediate polymer adhesives is an important fabrication technique for advanced microelectronic and microelectromechanical systems, such as three-dimensional integrated circuits, advanced packaging, and microfluidics. In adhesive wafer bonding, the polymer adhesive bears the forces involved to hold the surfaces together. The main advantages of adhesive wafer bonding include the insensitivity to surface topography, the low bonding temperatures, the compatibility with standard integrated circuit wafer processing, and the ability to join different types of wafers. Compared to alternative wafer bonding techniques, adhesive wafer bonding is simple, robust, and low cost. This article reviews the state-of-the-art polymer adhesive wafer bonding technologies, materials, and applications., QC 20100525, QC 20111102

This program proposed to develop manufacturable, cost-effective buffer layer technologies that would allow either hybrid or monolithic integration of LWIR and VLWIR HgCdTe infrared focal plane arrays with standard Si-based integrated circuits. Previous efforts were thwarted by the large lattice mismatch that prevents the growth of high-quality HgCdTe epilayers directly onto a Si wafer. Three buffer layer technologies are proposed, each of which provides unique solutions to the issues preventing the realization of LWIR HgCdTe on Si. These technologies are based on the following: (1) the use of ultra thin GeSi films as obedient buffers, and (2) wafer bonding of lattice-matched buffers. Obedient buffers -- A method of forming Ge(x)Si(1-x) films by thermal oxidation of Ge(exp +)-implanted Si was further developed. The process involves the segregation of the implanted Ge during oxidation to form a distinct Ge-rich layer at the oxide interface. The composition of the segregated layer can be altered by varying the oxidation conditions as a result of the kinetic competition between oxidation and the interdiffusion of the segregated layer with the underlying Si substrate. Rutherford backscattering results show that the Ge-rich layer becomes more dilute at higher oxidation temperatures. Below a critical thickness, the segregated film forms pseudomorphically on the underlying Si. However, the observed critical thickness greatly exceeds the value predicted for pseudomorphic growth. Dislocation-free relaxation of the Ge(x)Si(1-x) films formed within a Si-on-insulator (SOI) wafer is achieved with a unique vacancy injection technique. The encapsulation of the segregated film by the oxide layers in the SOI ensures that the injected vacancies remain within the volume of the film to relax the strain and are not lost to the underlying substrate. Wafer Bonding -- Wafer bonding offers the ability to integrate dissimilar and orientationally differing layers on the substrate of choice7, Sponsored in part by the Office of Naval Research, San Diego, CA.