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The Final Proceedings for Sixth International Conference on Low Temperature Chemistry 29 August - 2 September 2006. This conference will cover the following sections: Section 1: Cryosynthesis structure and properties of chemical compounds with unusual chemical bonding. Topics: (a) novel cryogenic media clusters and nanostructures; (b) noble gas containing compounds; (b) active intermediate structures reactivity and spectroscopy. Section 2: Novel reaction pathways in cryogenic solids. Topics: (a) reactions in quantum media: liquids crystals nanodroplets; (b) cooled biomolecules and cryo-pharmacology; (c) astro- and stratospheric chemistry. Section 3: Quantum phenomena and reaction dynamics. Topics: (a) coherence and ultrafast dynamics; (b) tunneling and transport processes., The original document contains color images.

We present a molecular dynamics simulation study of vacancy generation and emission from grain boundaries during curvature-driven grain boundary migration. The U-shaped half-loop bicrystal geometry is employed in order to maintain a constant driving force during boundary migration. Nonlinearities in plots of half-loop grain area versus time indicate the onset of non-steady-state behavior and vacancy formation. Such events appear much more frequently at elevated temperature than at low temperature. Detailed observation of the atomic configurations in the vicinity of the grain boundary before and after these events clearly demonstrate that these non-linearities are associated with the generation and subsequent emission of vacancies. The excess volume associated with the grain boundaries in conjunction with the loss in grain boundary area during curvature-driven migration accounts for the generation of these vacancies. This description is used to predict the rate of vacancy emission, which represents an upper bound on the observed emission rates.

Current oscillations in the negative differential conductance region of resonant tunneling diodes with different lateral pattern and size versus perpendicular to the tunneling current magnetic field have been studied. It is revealed that the value of the critical negative differential conductance or oscillations threshold that is the value of conductance when the oscillations in measurement circuit are arisen, unmonotonically depends on magnetic field. The relation of the observed dependence with inhomogeneous distribution of the tunneling current is discussed., This article is from ADA408025 Nanostructures: Physics and Technology International Symposium (9th), St. Petersburg, Russia, June 18-22, 2001 Proceedings

This article is from ADA408025 Nanostructures: Physics and Technology International Symposium (9th), St. Petersburg, Russia, June 18-22, 2001 Proceedings

We report an electrical transport and magnetotransport study of GaAs/AlAs/ GaAs single- barrier heterostructures incorporating unintentional donors in the barrier. Resonant tunneling was observed both through the quasiconfined states in the AlAs layer originated from the X(xy) and X(z) conduction band minima and through two distinct states of the donors bound to the X(xy) and X(z) valleys. Furthermore we observed an additional oscillatory like fine structure of the donor resonances that we attribute to difference in binding energies of donors located at different position of the AlAs layer. Magnetic field behaviour of the fine structure demonstrated that the binding energy of X-related donors has an essential dependence on both magnetic field and donor position in the barrier., This article is from ADA408025 Nanostructures: Physics and Technology International Symposium (9th), St. Petersburg, Russia, June 18-22, 2001 Proceedings

Angle resolved emission spectra of MCs with quantum wells embedded in the active layer have been investigated under conditions of resonant excitation into the lower polariton (LP) branch. The conditions have been found at which macroscopic filling at the LP branch bottom is reached in the strong coupling regime. Under these conditions strong nonlinear effects in the intensity and the degree of polarization of polariton emission have been observed and investigated. The experimental dispersion of renormalized cavity mode and its strong narrowing have been explained using an interacting polariton model predicting that the coupling between the LP mode E(LP)(k) and the mode E*(k)= 2hw - E(LP)(k +2k(excitation) is qualitatively different from that of exciton and photon., This article is from ADA408025 Nanostructures: Physics and Technology International Symposium (9th), St. Petersburg, Russia, June 18-22, 2001 Proceedings

We have investigated equilibrium tunneling between disordered two-dimensional electron systems at temperature below 0.3 K and in a wide range of magnetic field normal to the electron layers. Observed transformation of a narrow conductance peak of about I mV width at zero bias into the narrow dip with magnetic field is discussed in the frame of many-electron interaction effects in tunnel phenomena., This article is from ADA408025 Nanostructures: Physics and Technology International Symposium (9th), St. Petersburg, Russia, June 18-22, 2001 Proceedings

We have performed normal-to-plane magneto transport measurements in single crystalline (100) W and Mo nanostructures down to 1.5 K. Fabricated nanostructures possess large mean free path due to their bulk crystalline perfection and low surface roughness. Under these conditions electrons scatter only on the boundaries of nanostructures and may travel long distance without scattering. We found that in this regime the normal-to-plane magnetoresistance of planar metallic nanostructures exhibit specific for ballistic transport attributes such as transverse magnetic focusing suppression of Hall resistance (quenching Hall effect) and negative bend resistance at moderate magnetic fields., This article is from ADA408025 Nanostructures: Physics and Technology International Symposium (9th), St. Petersburg, Russia, June 18-22, 2001 Proceedings

It have been found that the presence of InA self-arranged quantum dots strongly modify the structure of Landau levels in a host GaAs quantum well., This article is from ADA408025 Nanostructures: Physics and Technology International Symposium (9th), St. Petersburg, Russia, June 18-22, 2001 Proceedings

We investigate resonant tunneling in GaAs/(AlGa)As double-barrier resonant-tunneling diodes (RTDs) in which a single layer of InAs self-assembled quantum dots (SAQDs) is embedded in the center of the GaAs quantum well. The dots provide a well-defined and controllable source of disorder in the well and we use resonant tunneling for studying the effect of disorder on the electronic properties of the well., This article is from ADA408025 Nanostructures: Physics and Technology International Symposium (9th), St. Petersburg, Russia, June 18-22, 2001 Proceedings

We use magnetotunnelling spectroscopy as a non-invasive probe to produce two-dimensional spatial images of the probability density of an electron confined in a self-assembled semiconductor quantum dot. The images reveal clearly the elliptical symmetry of the ground state and the characteristic lobes of the higher energy states., This article is from ADA408025 Nanostructures: Physics and Technology International Symposium (9th), St. Petersburg, Russia, June 18-22, 2001 Proceedings

Electron conductivity of single crystalline nanostructures both of bridge- and cross- type has been investigated at 4.2 K. It shows strong dependence in magnetic field and also exhibits anisotropy against magnetic field direction. It was found new reentrance effect in ballistic properties of multi-terminal cross-type nanostructure. where ballistic properties are suppressed in moderate magnetic field and restored again at higher field., This article is from Nanostructures: Physics and Technology Intl Symposium (8th), p. 520-523 This article is from ADA407315 Nanostructures: Physics and Technology International Symposium (8th) Held in St. Petersburg, Russia on June 19-23, 2000 Proceedings

Described phenomena are associated with the creation of a collective excitonic phase. Dielectric excitonic nature of this new phase is confirmed by its diamagnetic behavior and by Zeeman splittings in magnetic field parallel to the structure growth direction (Faraday geometry). Space coherence of collective excitonic phase is investigated and discussed., Pres: 8th Int Symp Nanostructures: Physics and Technology, St Petersburg, Russia, 19-23 Jun 2000, p1. This article is from ADA407315 Nanostructures: Physics and Technology International Symposium (8th) Held in St. Petersburg, Russia on June 19-23, 2000 Proceedings

The current instabilities in the negative differential conductance region of the resonance tunneling diode have been thoroughly studied at different parameters of the external circuit. The instabilities were dealt with an excitement of the current oscillations in the circuit. In a homogeneous approximation two small signal equivalent circuits of the resonant tunneling diode were used to describe the observed instabilities. Some revealed effects were out of the approximation., This article is from Nanostructures: Physics and Technology Intl Symposium (8th), p. 347-350 This article is from ADA407315 Nanostructures: Physics and Technology International Symposium (8th) Held in St. Petersburg, Russia on June 19-23, 2000 Proceedings

The paper is concentrated on the theoretical consideration of imprinting process and of polymer flow during embossing of the master. Another activity was related to development of experimental techniques for performing imprinting., Pres: 8th Int Symp Nanostructures: Physics and Technology, St Petersburg, Russia, 19-23 Jun 2000, p121-124. This article is from ADA407315 Nanostructures: Physics and Technology International Symposium (8th) Held in St. Petersburg, Russia on June 19-23, 2000 Proceedings

It was found that the dephasing time T2 of direct light hole excitons is decreased in 5 times by mixing its wave function with indirect heavy hole exciton wave function. The decreasing and restoring of light hole exciton dephasing time takes place two times for the values of external steady electric field from 1 V to 3 V. We hope this effect will be useful for the designing of new electro-optic devises., Pres: 7th Int Symp Nanostructures: Physics and Technology; St Petersburg, Russia. p420-422. This article is from ADA407055 Nanostructures: Physics and Technology. 7th International Symposium. St. Petersburg, Russia, June 14-18, 1999 Proceedings

This article have investigated equilibrium tunneling between strongly localized 2D electron systems in a high magnetic field in the structure with pure vertical transport. High magnetic field suppresses equilibrium tunneling creating a gap in the tunneling density of states which depends linearly on magnetic field., Pres: 7th Int Symp Nanostructures: Physics and Technology, St Petersburg, Russia. 14-18 Jun 1999. p266-268. This article is from ADA407055 Nanostructures: Physics and Technology. 7th International Symposium. St. Petersburg, Russia, June 14-18, 1999 Proceedings

One-dimensional SiGe structures were grown by molecular beam epitaxy on mesa-patterned Si (100) and (111) substrates. The effect of temperature and deposition rate on faceting of local epitaxial Si and SiGe structures was studied in temperature range from 45O C to 900 C. Scanning electron microscopy revealed that the increase of growth temperature and/or the decrease of deposition rate result in faceting of the growing structures. Epitaxial structures with Si(.75)Ge(.25) quantum wires 4 nm in thickness and 30-50 nm in width separated by 30-nm Si barriers were grown. Low-temperature luminescence spectra of these structures were obtained., Pres: 6th Int Symp Nanostructures: Physics and Technology, St Petersburg, Russia. 22-26 Jun 1998. p481-482. This article is from ADA406591 Nanostructures: Physics and Technology International Symposium (6th) held in St. Petersburg, Russia on June 22-26, 1998 Proceedings

Experiments with ballistic weak link, where coherent Andreev's reflection may taken place, are of great interest. Recently, such type expenments were carried out using high electron rnobllity 2 DEG of semiconductor heterostructures contacted to the superconductors. Developing of monocrystalline metallic nanostructure fabrication capable ballistic electron transport makes it possible to fabricate superconductor normal metal (ballistic) structures, including also heteroepitaxial multilayered nanostructures. In this report we present for the first time the experimental realization of that and also the first results on electron transport investigation of S-N nanostructures fabricated., Pres: 6th Int Symposium Nanostructures: Physics and Technology, St Petersburg, Russia. 22-26 Jun 1998. p82-85. This article is from ADA406591 Nanostructures: Physics and Technology International Symposium (6th) held in St. Petersburg, Russia on June 22-26, 1998 Proceedings