Search

Progress with silicon and silicon germanium (SiGe) based BiCMOS technologies over the past few years has been very impressive. This enables the implementation of traditional microwave and emerging mm-wave applications in silicon. The paper gives an overview of several high-performance ICs that have been implemented in a state-of-the-art BiCMOS technology (QUBiC4). Examples of high-performance ICs are described ranging from basic building blocks for mobile applications to highly integrated receiver and transmitter ICs for applications up to the mm-wave range.

Progress with silicon and silicon germanium (SiGe) based BiCMOS technologies over the past few years has been very impressive. This enables the implementation of traditional microwave and emerging mm-wave applications in silicon. The paper gives an overview of several high-performance ICs that have been implemented in a state-of-the-art BiCMOS technology (QUBiC4). Examples of high-performance ICs are described ranging from basic building blocks for mobile applications to highly integrated receiver and transmitter ICs for applications up to the mm-wave range.

This paper presents a new original full wave hybrid approach based on a wave concept formulation to analyze inhomogeneous layers stack with arbitrary doping profiles. To demonstrate capabilities of this approach simulation results are presented and successfully compared to published results and available software in the case of homogeneous multilayer BiCMOS typical structure with and without buried diffusions layers (BDL) for multi-levelmetallizations. To reduce epitaxial/substrate coupling noise, metallically grilled BDL with varying doping profiles are investigated and exhibit an isolation improvement of about 20 dB.

This paper presents a new original full wave hybrid approach based on a wave concept formulation to analyze inhomogeneous layers stack with arbitrary doping profiles. To demonstrate capabilities of this approach simulation results are presented and successfully compared to published results and available software in the case of homogeneous multilayer BiCMOS typical structure with and without buried diffusions layers (BDL) for multi-levelmetallizations. To reduce epitaxial/substrate coupling noise, metallically grilled BDL with varying doping profiles are investigated and exhibit an isolation improvement of about 20 dB.

Two MMICs have been designed and fabricated for television applications. To be compatible with the needs of the market, low cost approaches have been used to design these circuits. The first one, is an image rejection downconverter fabricated on a 2.4mm2 chip using a 0.5 micron MESFET low cost process. This circuit converts signals in the 10.95 to 12.75GHz band to a lower frequency band (1). The second one is a fully integrated 2GHz downconverter IC fabricated on a 0.9mm2 chip, using an enhancement mode GaAs process. It converts signals in the 0.95GHz to 2GHz band to the UHF band with its internal local oscillator (2). In both cases, original solutions have been used to reduce the cost of the packaged chips .

Two MMICs have been designed and fabricated for television applications. To be compatible with the needs of the market, low cost approaches have been used to design these circuits. The first one, is an image rejection downconverter fabricated on a 2.4mm2 chip using a 0.5 micron MESFET low cost process. This circuit converts signals in the 10.95 to 12.75GHz band to a lower frequency band (1). The second one is a fully integrated 2GHz downconverter IC fabricated on a 0.9mm2 chip, using an enhancement mode GaAs process. It converts signals in the 0.95GHz to 2GHz band to the UHF band with its internal local oscillator (2). In both cases, original solutions have been used to reduce the cost of the packaged chips .