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This work studies, for the first time to our best knowledge, the perspectives of trigate nanowire (TGNW) MOSFETs for analog applications. An effect of nanowire width, length and orientation as well as frequency (up to 4 GHz) and temperature (up to 225°C) on analog figures-of-merit (FoM) is analyzed. Benchmarking with other advanced devices such as ultra-thin body and BOX (UTBB) MOSFETs and SOI-based FinFETs is presented. TGNW MOSFETs are shown to be very promising for analog applications featuring high transconductance combined with high intrinsic gain. Only a slight reduction of device performance over the frequency and temperature ranges is observed.

Inter-die variability of analog figures of merit of ultra-thin body and buried oxide (UTBB) FDSOI MOSFETs was studied in a wide frequency range. We demonstrate that variability in the entire frequency range is small and does not exceed 5%, which is considerably less than in previously published results on SOI FinFETs. An effect of frequency on the analog figures of merit variability is discussed and preliminary explanation is proposed.

Inter-die variability of analog figures of merit of ultra-thin body and buried oxide (UTBB) FDSOI MOSFETs was studied in a wide frequency range. We demonstrate that variability in the entire frequency range is small and does not exceed 5%, which is considerably less than in previously published results on SOI FinFETs. An effect of frequency on the analog figures of merit variability is discussed and preliminary explanation is proposed.

This paper investigates both electrostatic control improvement and performance enhancement of UTBB SOI MOSFETs obtained in quasi-double-gate (QDG) regime (i.e. simultaneously biasing top- and back-gate (substrate or ground plane) as Vbg = k Vg) as a strong function of k-multiplication factor, when compared to a standard single-gate mode. Improved performance (in terms of transconductance, drive current and early voltage) in QDG mode combined with lowered DIBL and enhanced gain are of interest for high-precision low-frequency analog applications. QDG mode is demonstrated to allow threshold voltage tuning, subthreshold swing reduction and on-current enhancement without off-state current degradation, thus of interest for digital applications. The unique feature of QDG mode is finally exploited to boost the performances of the sleep transistor in the practical use case of a power-gated processor. About 30% reduction of the leakage in stand-by mode is achieved at nominal Vg with a Vbg of 3 V, which can be generated at marginal area/power overheads with an on-chip charge pump with an architecture proposed in this paper.

In this work we investigate the effect of ground plane (GP) on analog figures of merit (FoM) of ultra-thin body and thin buried oxide (UTBB) SOI MOSFETs. Based on experimental devices, both n- and p-type GP configurations are considered and compared with standard no-GP substrates. In a standard single-gate (SG) regime, the effect of GP implementation on analog FoM (related to slightly higher body factor and improved gate-to-channel coupling) is negligible. Moreover, p-GP implementation allows higher intrinsic gain at high frequency compared with no-GP and n-GP substrates. Furthermore, we demonstrate that application of an asymmetric double-gate (ADG) (i.e. front-gate to back-gate/substrate connection) regime allows better control of short-channel effects in terms of drain induced barrier lowering, subthreshold slope and threshold voltage control, due to improved gate(s)-to-channel coupling. Application of an ADG mode is shown to enhance analog FoM such as transconductance, drive current and intrinsic gain of UTBB SOI MOSFETs. Finally, simulations predict that improvements of analog FoM provided by ADG mode can be obtained in the whole dynamic operation range. Moreover, ADG mode provides elimination of the high-frequency substrate coupling effects.

In this work we investigate the effect of ground plane (GP) on analog figures of merit (FoM) of ultra-thin body and thin buried oxide (UTBB) SOI MOSFETs. Based on experimental devices, both n- and p-type GP configurations are considered and compared with standard no-GP substrates. In a standard single-gate (SG) regime, the effect of GP implementation on analog FoM (related to slightly higher body factor and improved gate-to-channel coupling) is negligible. Moreover, p-GP implementation allows higher intrinsic gain at high frequency compared with no-GP and n-GP substrates. Furthermore, we demonstrate that application of an asymmetric double-gate (ADG) (i.e. front-gate to back-gate/substrate connection) regime allows better control of short-channel effects in terms of drain induced barrier lowering, subthreshold slope and threshold voltage control, due to improved gate(s)-to-channel coupling. Application of an ADG mode is shown to enhance analog FoM such as transconductance, drive current and intrinsic gain of UTBB SOIMOSFETs. Finally, simulations predict that improvements of analog FoM provided by ADG mode can be obtained in the whole dynamic operation range. Moreover, ADG mode provides elimination of the high-frequency substrate coupling effects.