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Variability of UTBB MOSFET Analog Figures of Merit in Wide Frequency Range

Authors :
UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique
Makovejev, Sergej
Kazemi Esfeh, Babak
Raskin, Jean-Pierre
Kilchytska, Valeriya
Flandre, Denis
Barral, V.
Planes, N.
Haond, M.
2014 4th European Solid State Device Research Conference (ESSDERC 2014)
UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique
Makovejev, Sergej
Kazemi Esfeh, Babak
Raskin, Jean-Pierre
Kilchytska, Valeriya
Flandre, Denis
Barral, V.
Planes, N.
Haond, M.
2014 4th European Solid State Device Research Conference (ESSDERC 2014)
Publication Year :
2014

Abstract

Inter-die variability of analog figures of merit of ultra-thin body and buried oxide (UTBB) FDSOI MOSFETs was studied in a wide frequency range. We demonstrate that variability in the entire frequency range is small and does not exceed 5%, which is considerably less than in previously published results on SOI FinFETs. An effect of frequency on the analog figures of merit variability is discussed and preliminary explanation is proposed.

Details

Database :
OAIster
Notes :
English
Publication Type :
Electronic Resource
Accession number :
edsoai.on1130482248
Document Type :
Electronic Resource