48 results on '"Shang, Shumay"'
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2. An integrated verification flow for curvilinear mask
3. Principal components and optimal feature vectors of EUVL stochastic variability: applications of Karhunen-Loève expansion to efficient estimation of stochastic failure probabilities and stochastic metrics
4. Machine learning assisted effective OPC verification hotspot capture
5. EUV SRAFs printing modeling and verification in 2D hole array
6. EUV SRAFs printing modeling with bright field mask
7. Machine learning based error classification for curvilinear designs
8. Gaussian random field EUV stochastic models, their generalizations and lithographically meaningful stochastic metrics
9. MRC for curvilinear mask shapes
10. Real-time full-wafer design-based inter-layer virtual metrology
11. Stochastic model prediction of pattern-failure
12. Process window-based feature and die failure rate prediction
13. Machine learning assisted effective OPC verification hotspot capture.
14. Combinational optical rule check on hotspot detection
15. Impact of aberrations in EUV lithography: metal to via edge placement control
16. Impact of Aberrations in EUV Lithography: Metal to Via Edge Placement Control.
17. EUV SRAFs printing modeling and verification in 2D hole array.
18. Characterization and mitigation of relative edge placement errors (rEPE) in full-chip computational lithography
19. Full chip two-layer CD and overlay process window analysis
20. Model-based stitching and inter-mask bridge prevention for double patterning lithography
21. Etch proximity correction by integrated model-based retargeting and OPC flow
22. Optimizing gate layer OPC correction and SRAF placement for maximum design manufacturability
23. Minimizing yield-loss risks through post-OPC verification
24. On objectives and algorithms of inverse methods in microlithography
25. Model based insertion of assist features using pixel inversion method: implementation in 65nm node
26. The influence of calibration pattern coverage for lumped parameter resist models on OPC convergence
27. Model-based insertion and optimization of assist features with application to contact layers
28. Lithography process related OPC development and verification demonstration on a sub-90nm poly layer
29. High accuracy 65nm OPC verification: full process window model vs. critical failure ORC
30. Lithography yield enhancement through optical rule checking
31. MEEF-based mask inspection
32. Critical failure ORC: application to the 90-nm and 65-nm nodes
33. Failure prediction across process window for robust OPC
34. Machine learning based error classification for curvilinear designs.
35. Optimizing gate layer OPC correction and SRAF placement for maximum design manufacturability.
36. Etch proximity correction by integrated model-based retargeting and OPC flow.
37. Model based insertion of assist features using pixel inversion method: implementation in 65nm node.
38. Minimizing yield-loss risks through post-OPC verification.
39. The influence of calibration pattern coverage for lumped parameter resist models on OPC convergence.
40. Integrated post tape outflow for fast design to mask turn-around time.
41. High accuracy 65nm OPC verification: full process window model vs. critical failure ORC.
42. Lithography process related OPC development and verification demonstration on a sub-90nm poly layer.
43. MEEF-based mask inspection.
44. Failure prediction across process window for robust OPC.
45. Gaussian random field EUV stochastic models, their generalizations and lithographically meaningful stochastic metrics.
46. MRC for curvilinear mask shapes.
47. Stochastic model prediction of pattern-failure.
48. Real-time full-wafer design-based inter-layer virtual metrology.
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