13 results on '"Man Hoi Wong"'
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2. Enhancement-Mode Current Aperture Vertical Ga2O3 MOSFETs.
3. Reduction of Saturation Voltage in InGaAs-Channel/lnGaN-Drain Vertical FETs and the role of traps at the InGaAs/lnGaN junction.
4. Recent Advances in Ga2O3 MOSFET Technologies.
5. Latest progress in gallium-oxide electronic devices.
6. N-polar GaN-based MIS-HEMTs for mixed signal applications.
7. Vertically scaled 5 nm GaN channel enhancement-mode N-polar GaN MOS-HFET with 560 mS/mm gm and 0.76 Ω-mm Ron.
8. Anomalous output conductance in N-polar GaN-based MIS-HEMTs.
9. Dispersion-free AlGaN/GaN CAVET with low Ron achieved with plasma MBE regrown channel with Mg-ion-implanted current blocking layer.
10. Scalable E-mode N-polar GaN MISFET devices and process with self-aligned source/drain regrowth.
11. High performance MBE-grown N-face microwave GaN HEMTs with >70% PAE.
12. Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier.
13. N-polar GaN Electronics.
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