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Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier.
- Source :
- 2008 Device Research Conference; 2008, p201-202, 2p
- Publication Year :
- 2008
Details
- Language :
- English
- ISBNs :
- 9781424419425
- Database :
- Complementary Index
- Journal :
- 2008 Device Research Conference
- Publication Type :
- Conference
- Accession number :
- 80995374
- Full Text :
- https://doi.org/10.1109/DRC.2008.4800802