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Power Electronics Equipments applying superior characteristics Silicon Carbide (SiC) power semiconductors have been researching and developing. Applying the hybrid modules using Si-IGBT and SiC-SBD (Schottky Barrier Diode) to the motor drive inverter enables reduction of the loss 25% of the inverter part. Moreover applying the All-SiC modules using SiC-MOSFET and SiC-SBD to the solar inverter enables to be the efficiency of the main circuit unit 99%, and to be the volume of the equipment 25% to conventional one. [ABSTRACT FROM PUBLISHER]

Power Electronics Equipments applying superior characteristics Silicon Carbide (SiC) power semiconductors have been researching and developing. Applying the hybrid modules using Si-IGBT and SiC-SBD (Schottky Barrier Diode) to the motor drive inverter enables reduction of the loss 25% of the inverter part. Moreover applying the All-SiC modules using SiC-MOSFET and SiC-SBD to the solar inverter enables to be the efficiency of the main circuit unit 99%, and to be the volume of the equipment 25% to conventional one. [ABSTRACT FROM PUBLISHER]

Excellent electrical properties of latest power devices for improving the efficiency of PV inverters are presented. Power modules using SiC-MOSFET and -SBD exhibit the possibility to realize PV inverters with peak efficiency beyond 99.0%. Silicon IGBT modules using RB-IGBT have enabled to mass-produce PV inverters with peak efficiency of 98.4%. Silicon SJ-MOSFET and discrete IGBT have enabled to improve the efficiency of small power PV inverters by 0.5 point. [ABSTRACT FROM PUBLISHER]

The drive towards high efficiency wind energy conversion systems has resulted in almost all the modern wind turbines to operate in the variable speed mode which inevitably requires back-to-back power electronic converters to decouple generator dynamics from the grid. The aim of this paper is to present an analysis on suitable topologies for the generator-side converter (rectifier) of the back-to-back converter arrangement. Performance of the two most popular rectifier systems, namely, the passive diode bridge rectifier and the active six-switch two-level rectifier are taken as two extremes to evaluate other topologies presented in this paper. The other rectifier systems considered in this study include combinations of a diode bridge rectifier and electronic reactance(s), a combination of a rectifier and a dc-dc converter and a half controlled rectifier. Diode-clamped and capacitor-clamped three-level active rectifier topologies and their possible switch reductions are also discussed in relation to the requirements of modern high power wind energy conversion systems (WECSs). Simulation results are presented to support conclusion derived from this analysis. [ABSTRACT FROM PUBLISHER]