65 results on '"HAUSER, J.R."'
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2. An evaluation of super-steep-retrograde channel doping for deep-submicron MOSFET applications
3. Modeling the trends in valence-band electron tunneling in NMOSFETs with ultrathin SiO 2 and [formula omitted] dielectrics with oxide scaling
4. The effects of Ge content in poly-Si 1− xGe x gate material on the tunneling barrier in PMOS devices
5. Doping characteristics and electrical properties of Be-doped p-type AlxGa1-xAs by liquid phase epitaxy.
6. ASSESSMENT OF ATTRIBUTE IMPORTANCES AND CONSUMER UTILITY FUNCTIONS: VON NEUMANN-MORGENSTERN THEORY APPLIED TO CONSUMER BEHAVIOR
7. Dynamic Analysis of Consumer Response to Marketing Strategies
8. SEU-hardened silicon bipolar and GaAs MESFET SRAM cells using local redundancy techniques.
9. Noise margin criteria for digital logic circuits.
10. An analytic model for MODFET capacitance-voltage characteristics.
11. Forward-bias conduction of Schottky diodes on polysilicon thin films.
12. Calculations of high-speed performance for submicrometer ion-implanted GaAs MESFET devices.
13. A comparative analysis of GaAs and Si ion-implanted MESFET's.
14. Spectral response of n+-n-p and n+-p photodiodes.
15. Electron and hole mobilities in silicon as a function of concentration and temperature.
16. Material and device considerations for cascade solar cells.
17. Performance limitations of silicon solar cells.
18. A computer analysis of heterojunction and graded composition solar cells.
19. Cener for advanced electronic materials processing.
20. Electrical properties of composite gate oxides formed by rapid thermal processing.
21. Some observations on charge buildup and release in silicon dioxide irradiated with low energy electrons.
22. Small signal properties of field effect devices.
23. The effects of distributed base potential on emitter-current injection density and effective base resistance for stripe transistor geometries.
24. Effect of polysilicon gate type on the flatband voltage shift for ultrathin oxide-nitride gate stacks.
25. Gate quality ultrathin (2.5 nm) PECVD deposited oxynitride and nitrided oxide dielectrics.
26. Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors.
27. DC and AC characteristics of a nonalloyed delta-doped MESFET by atomic layer epitaxy.
28. Ballistic transport in GaAs.
29. Influence of central valley effective mass and alloy scattering on transient drift velocity in Ga1−xInxP1−yAsy.
30. Ultrathin oxide-nitride gate dielectric MOSFET's.
31. Electron Hall mobility calculations and alloy scattering in Ga0.47In0.53As.
32. On the deeply depleted MOS capacitor.
33. On the beta falloff in junction transistors.
34. Beta falloff in tansistors at high collector currents.
35. An approximation for generation-recombination current in P-N junctions.
36. Monte Carlo simulation of the hall effect in degenerate GaAs
37. Local atomic structure and electrical properties of nitrided SiSiO 2 interfaces produced by low-temperature plasma processing and rapid thermal annealing, and explained by ab-initio quantum chemistry calculations
38. Silicon/SiO 2 interface formation by remote plasma-enhanced oxidation/deposition process in a cluster tool
39. Controlled nitrogen incorporation at SiSiO 2 interfaces and in thin gate dielectrics by remote-plasma-assisted oxidation and deposition processes
40. Temperature dependence of silicon solar cell characteristics
41. Time-dependent dielectric breakdown measurements on RPECVD and thermal oxides
42. Inversion and accumulation layer formation at elevated temperatures in n-type GaAs-anodic oxide MIS devices
43. A study of efficiency in low resistivity silicon solar cells
44. Effects of profile doped elevated source/drain structures on deep-submicron MOSFETs
45. A simple parameter extraction method for ultra-thin oxide MOSFETs
46. Optimum bandgap of several III–V heterojunction solar cells
47. Transient transport in central-valley-dominated ternary III–V alloys
48. Two-dimensional Monte Carlo simulation of a submicron GaAs MESFET with a nonuniformly doped channel
49. Negative resistance and peak velocity in the central (000) valley of III–V semiconductors
50. Alloy scattering and high field transport in ternary and quaternary III–V semiconductors
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