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Studies the growth, structural and optical characteristics of strained indium arsenic nitride/indium gallium arsenide quantum well structures on indium phosphide substrates grown by gas-source molecular beam epitaxy. Atomic nitrogen; Effect of incorporation of nitrogen on red-shifted photoluminescence.

A GaAs0.7Sb0.3/GaAs type-II quantum-well laser with a InAs quantum-dot (QD) layer adjacent to the well is reported. The laser shows much lower threshold current density, lower internal loss and higher characteristic temperature than the device without adjacent QDs. The better performances are attributed to additional dimensional confinement, resulting from a spatial potential fluctuation induced by the adjacent QDs, for carriers in the active region of the laser. [ABSTRACT FROM AUTHOR]

Reports that a highly strained GaAs/GaAs0.64Sb0.36 single quantum well laser has been grown on GaAs (100) substrate by using solid source molecular beam epitaxy. Ability of the uncoated broad-area laser to demonstrate 1.292 micron pulsed operation with a low threshold current density of 300 A/cm2; Spontaneous emission of the laser; Observation that the Auger recombination component dominates the threshold current at high temperature.

The design and experimental demonstrations of a planar inverted-F antenna (PIFA) are presented. The physical parameters of the antenna, including shorting plate width, antenna input impedance, antenna thickness and ground plane dimensions, are studied. The influence of various parameters on antenna characteristics has been investigated using simulation software IE3D and experimental results. Comparisons with measured results on fabricated antenna structures are provided for simulation validation. Simple semi-empirical formulas of the operational frequency and input impedance on the antenna have also been obtained. These results are very useful in the design of PIFA. [ABSTRACT FROM AUTHOR]