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Strained InAsN InGaAs InP multiple quantum well structures grown by RF-plasma assisted GSMBE for mid-infrared laser applications.
- Source :
-
IEE Proceedings -- Optoelectronics . Jun2003, Vol. 150 Issue 3, p253. 6p. - Publication Year :
- 2003
-
Abstract
- Studies the growth, structural and optical characteristics of strained indium arsenic nitride/indium gallium arsenide quantum well structures on indium phosphide substrates grown by gas-source molecular beam epitaxy. Atomic nitrogen; Effect of incorporation of nitrogen on red-shifted photoluminescence.
- Subjects :
- *INDIUM compounds
*QUANTUM wells
*MOLECULAR beam epitaxy
Subjects
Details
- Language :
- English
- ISSN :
- 13502433
- Volume :
- 150
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- IEE Proceedings -- Optoelectronics
- Publication Type :
- Academic Journal
- Accession number :
- 10058009