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The ability to detect individual impurity atoms has been greatly enhanced by the development of aberration-corrected electron microscopes. The reduced depth of focus potentially enables three-dimensional reconstructions of impurity atoms from through-focal series. We test the robustness of this depth-sectioning method for detecting impurity atoms in gate oxides using multislice simulations. For amorphous materials, dopants can be reliably imaged, and are accurately described by a simpler three-dimensional linear imaging model. For crystalline materials, however, channeling artifacts can render the signal uninterpretable. These artifacts can be eliminated by orienting the crystal slightly off the zone axis, which still preserves atomic resolution. [ABSTRACT FROM AUTHOR]

As integrated circuits have shrunk, conventional electron microscopies have proven inadequate for imaging complicated interconnect structures due to the overlap of features in projection. These techniques produce transmission functions with a nonmonotonic dependence of intensity on thickness for common microelectronic materials, making them unsuitable for tomography. We report the use of an incoherent bright field imaging technique in a scanning transmission electron microscope optimized for the three-dimensional reconstruction of thick copper microelectronic structures. Predictable behavior of the signal in samples up to ∼1 μm thick allows us to reconstruct and quantify the shape and volume of stress voids within Ta-lined interconnects. [ABSTRACT FROM AUTHOR]