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Three-dimensional imaging of nanovoids in copper interconnects using incoherent bright field tomography.
- Source :
- Applied Physics Letters; 6/12/2006, Vol. 88 Issue 24, p243116, 3p, 1 Black and White Photograph, 2 Graphs
- Publication Year :
- 2006
-
Abstract
- As integrated circuits have shrunk, conventional electron microscopies have proven inadequate for imaging complicated interconnect structures due to the overlap of features in projection. These techniques produce transmission functions with a nonmonotonic dependence of intensity on thickness for common microelectronic materials, making them unsuitable for tomography. We report the use of an incoherent bright field imaging technique in a scanning transmission electron microscope optimized for the three-dimensional reconstruction of thick copper microelectronic structures. Predictable behavior of the signal in samples up to ∼1 μm thick allows us to reconstruct and quantify the shape and volume of stress voids within Ta-lined interconnects. [ABSTRACT FROM AUTHOR]
- Subjects :
- INTEGRATED circuits
MICROELECTRONICS
ELECTRON microscopes
COPPER
TOMOGRAPHY
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 88
- Issue :
- 24
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 21364194
- Full Text :
- https://doi.org/10.1063/1.2213185