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Your search keyword '"Lin, H. H."' showing total 2 results
2 results on '"Lin, H. H."'

1. Strained InAsN InGaAs InP multiple quantum well structures grown by RF-plasma assisted GSMBE for mid-infrared laser applications.

Author

Shih, D.-K., Lin, H.-H., and Lin, Y.-H.

Subjects
*INDIUM compounds, *QUANTUM wells, *MOLECULAR beam epitaxy
Abstract

Studies the growth, structural and optical characteristics of strained indium arsenic nitride/indium gallium arsenide quantum well structures on indium phosphide substrates grown by gas-source molecular beam epitaxy. Atomic nitrogen; Effect of incorporation of nitrogen on red-shifted photoluminescence.

Published
2003

2. 1.3µm GaAs/GaAsSb quantum well laser grown by solid source molecular beam epitaxy.

Author

Liu, P.-W., Liao, G.-H., and Lin, H.-H.

Subjects
*QUANTUM wells, *LASERS, *GALLIUM arsenide semiconductors, *MOLECULAR beam epitaxy, *AUGER effect, *RECOMBINATION in semiconductors
Abstract

Reports that a highly strained GaAs/GaAs0.64Sb0.36 single quantum well laser has been grown on GaAs (100) substrate by using solid source molecular beam epitaxy. Ability of the uncoated broad-area laser to demonstrate 1.292 micron pulsed operation with a low threshold current density of 300 A/cm2; Spontaneous emission of the laser; Observation that the Auger recombination component dominates the threshold current at high temperature.

Published
2004
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