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Gallium nitride nanowire and nanorod substrates are prospective platforms allowing to control the local strain distribution in graphene films on top of them, resulting in an induction of pseudomagnetic fields. AFM measurements performed in a HybriD mode complemented by SEM allow for a detailed visualization of the strain distribution on graphene surface. Graphene in direct contact with supporting regions is tensile strained, while graphene located in-between is characterized by lower strain. Characteristic tensile strained wrinkles also appear in the areas between the supporting regions. A positive correlation between strain gradient and distances between borders of supporting regions is observed. These results are confirmed by analysis of the Raman D’ band intensity, which is affected by an enhancement of intravalley scattering. Furthermore, scanning tunneling spectroscopy shows a local modification of the density of states near the graphene wrinkle and weak localization measurements indicate the enhancement of pseudomagnetic field-induced scattering. Therefore, we show that nanowire and nanorod substrates provide strain engineering and induction of pseudomagnetic fields in graphene. The control of graphene morphology by modification of distances between supporting regions is promising for both further fundamental research and the exploration of innovative ways to fabricate pseudomagnetic field-based devices like sensors or filters.

In this report we investigate structural and electrical properties of epitaxial Chemical Vapor Deposition quasi-free-standing graphene on an unintentionally-doped homoepitaxial layer grown on a conducting 4H–SiC substrate 4° off-axis from the basal [0001] direction towards [11-20]. Due to high density of SiC vicinal surfaces the deposited graphene is densely stepped and gains unique characteristics. Its morphology is studied with atomic force and scanning electron microscopy. Its few-layer character and p-type conductance are deduced from a Raman map and its layers structure determined from a high-resolution X-ray diffraction pattern. Transport properties of the graphene are estimated through Hall effect measurements between 100 and 350 K. The results reveal an unusually low sheet resistance below 100 Ω/sq and high hole concentration of the order of 1015 cm−2. We find that the material's electrical properties resemble those of an epitaxially-grown SiC PIN diode, making it an attractive platform for the semiconductor devices technology.

In this report, we demonstrate a novel high-temperature Hall effect sensor that is based on quasi-free-standing monolayer graphene epitaxially grown on high-purity semiinsulating (SI) on-axis 4H-SiC(0001) substrate in a chemical vapor deposition process. To ensure statistical perspective, characteristics of 23 elements are determined as a function of temperature ranging from 300 to 770 K. Passivated with a 100-nm-thick atomic-layer-deposited aluminum oxide, the sensor offers current-mode sensitivity of 80 V/AT with thermal stability of −0.02%/K within the range between 300 and 573 K, and −0.06%/K between 573 and 770 K. The sensor’s room-temperature output voltage is monitored in the magnetic field from −300 to +300 mT and its offset voltage at 0 T is assessed. Its high-temperature electrical properties are explained through a double-carrier transport involving spontaneous-polarization-induced holes in the graphene layer and thermally activated electrons emitted from a deep acceptor level related to silicon vacancy $\text{V}_{\textsf {Si}}^{\textsf {1-/2-}}$ occupying the ${k}$ site of the 4H-SiC lattice. The sensor is compared with a previously reported one on vanadium-compensated SI on-axis 6H-SiC(0001). The new sensor’s applicability to magnetic field detection at high temperatures is verified.

By using four layered graphene/gallium nitride (GaN) Schottky diodes with an undoped GaN spacer, we demonstrate highly effective gating of graphene at low bias rendering this type of structure very promising for potential applications. An observed Raman G band position shift larger than 8.5 cm-1 corresponds to an increase in carrier concentration of about 1.2x10^13 cm-2. The presence of a distinct G band splitting together with a narrow symmetric 2D band indicates turbostratic layer stacking and suggests the presence of a high potential gradient near the Schottky junction even at zero bias. The subbands characterized by the highest Raman energies correspond to the largest concentration of electrons. An analysis based on electroreflectance measurements and a modified Richardson equation confirmed that graphene on n-GaN separated by an undoped GaN spacer behaves like a capacitor at reverse bias. At least 60% of G subband position shifts occur at forward bias, which is related to a rapid reduction of electric field near the Schottky junction. Raman micromapping shows a high uniformity of gating efficiency on the surface. Therefore, our studies demonstrate the usefulness of few layer turbostratic graphene deposited on GaN for tracing electron-phonon coupling in graphene. Multilayer graphene also provides uniform and stable electric contacts. Moreover, the observed bias sensitive G band splitting can be used as an indicator of charge transfer in sensor applications in the low bias regime.

We present a cross-correlation characterization of bound soliton states emerging in a polarization-multiplexed single-cavity dual-comb laser. High temporal and spectral resolution measurements over long optical delays are obtained through multi-heterodyne beating of the laser output.

Dual-comb spectroscopy (DCS) has experienced a remarkable growth propelled by recent advances in fiber and semiconductor technology. A key enabler for DCS is mutual stability between two repetition-rate-mismatched frequency combs, which conventionally relies on feedback loops employing additional optics and electronics to synchronize a pair of sources. This limitation can be overcome in several ways, of which one of the most promising is the generation of two frequency combs in a single free-running fiber laser cavity [1–3]. To date, however, the only configuration proven to be compatible with Doppler-limited spectroscopy was the dual-color laser presented in Ref. [2] requiring external spectral broadening, thus adding an extra layer of complexity.

Dual-comb spectroscopy has emerged as an indispensable analytical technique in applications that require high resolution and broadband coverage within short acquisition times. Its experimental realization, however, remains hampered by intricate experimental setups with large power consumption. Here, we demonstrate an ultra-simple free-running dual-comb spectrometer realized in a single all-fiber cavity suitable for the most demanding Doppler-limited measurements. Our dual-comb laser utilizes just a few basic fiber components, allows to tailor the repetition rate difference, and requires only 350 mW of electrical power for sustained operation over a dozen of hours. As a demonstration, we measure low-pressure hydrogen cyanide within 1.7 THz bandwidth, and obtain better than 1% precision over a terahertz in 200 ms enabled by a drastically simplified all-computational phase correction algorithm. The combination of the unprecedented setup simplicity, comb tooth resolution and high spectroscopic precision paves the way for proliferation of frequency comb spectroscopy even outside the laboratory., Comment: 15 pages, 7 figures, presented on 05/10 at CLEO 2019

We present a graphene-based holmium-doped fiber laser incorporating a Martinez-style compressor which enables precise and continuous dispersion control of the cavity. Solitonic operation of the laser for a wide range of net cavity dispersion values is achieved without significantly altering the repetition frequency. The compressor also provides the possibility to introduce additional spectral filtering - stable mode-locking operation in the 2049- 2093 nm wavelength span is presented.

Further development and optimization of modern optoelectronic devices requires fast and reliable procedures that may evaluate the quality of interfaces. For thick multilayer devices, mixing effect may significantly prevent proper interpretation of secondary ion mass spectrometry depth profiles especially if a region of interest is located far from the sample surface. In this work, we present how to overcome this problem with a so-called a-crater-within-a-crater approach. In this notion, a high energetic primary ion beam is used to rapidly remove most of the material forming a large crater. Then, the energy is significantly reduced and a new smaller crater is formed at the bottom of the previous one. Close to the region of interest, the impact energy is decreased to 150 eV and thus an interface can be analyzed with minimal mixing effect and thus its quality can be adequately assessed. Usefulness of this approach is tested on an epitaxial structure of a triple-junction solar cell and reliable information about the structure imperfection has been obtained: p and n dopants in the tunnel junction overlapped, deteriorating the operation of the device.

The surface-enhanced Raman scattering in graphene deposited on AlxGa1−xN/GaN axial heterostructure nanowires was investigated. It was found that the intensity of graphene Raman spectra is not correlated with aluminium content. Analysis of graphene Raman band parameters, Kelvin probe force microscopy, and electroreflectance showed a screening of polarisation charges. Theoretical calculations demonstrated that plasmon resonance in graphene is far beyond the Raman spectral range. This excludes the presence of an electromagnetic mechanism of surface-enhanced Raman scattering, hence suggesting a chemical mechanism of enhancement.

In this report we demonstrate the results of charge carriers transport studies in graphene using a Hall effect sensor fabricated on quasi-free-standing monolayer graphene grown on a semi-insulating on-axis vanadium-compensated 6H-SiC(0001) substrate in an epitaxial Chemical Vapor Deposition process. The sensor is passivated with aluminum oxide through atomic layer deposition and offers current-mode sensitivity of 140 V/AT with thermal stability of − 0.02%/K within the range between 80 and 573 K. The electrical properties of the graphene layer are determined as a function of temperature ranging from 300 to 770 K. High-temperature characteristics of passivated and not passivated graphene are compared and their profiles explained through a double-carrier transport involving the spontaneous-polarization-induced holes in the graphene layer and the thermally activated electrons from a shallow donor level of nitrogen in the quasi-cubic (k1) site and a deep acceptor level of vanadium in the hexagonal (h) site both present in the bulk of the vanadium-compensated SiC substrate. Finally, we conclude that this mechanism is directly responsible for the limitation of the thermal stability of the sensor's current-mode sensitivity.

Molecular compounds with photoswitchable magnetic properties have been intensively investigated over the last decades due to their prospective applications in nanoelectronics, sensing and magnetic data storage. The family of copper-nitroxide-based molecular magnets represents a new promising type of photoswitchable compounds. We report the first study of these appealing systems using femtosecond optical spectroscopy. We unveil the mechanism of ultrafast (

Epitaxial lift-off (ELO) is a process which enables the removal of solar cell structures (one junction GaAs, two junction GaAs/InGaP or three junction GaAs/InGaAs/InGaP) from the substrate on which they are grown and their transfer onto lightweight carriers such as metal or polymeric insulator films. The said solar cells exhibit superior power conversion efficiency compared with alternative single-junction photovoltaic cell designs such as those based on crystalline Si, copper indium gallium sulfide (CIGS) or CdTe. The major advantage of ELO solar cells is the potential for wafer reuse, which can enable significant manufacturing cost reduction by minimizing the consumption of expensive wafers. Here in this work we have grown one junction GaAs solar cells on GaAs (100) substrates. A 10 nm thick AlAs layer has been used as a release layer, which has been selectively etched in HF solution. We have investigated different methods of transferring thin films onto polymer and copper foils, including the usage of temporary mounting adhesives and electro-conductive pastes. Lift-off has been demonstrated to be a very promising technique for producing affordable solar cells with a very high efficiency of up to 30%.

We discuss the capacity of ultrafast broadband spectroscopy to become a test bed for investigating dynamics of metals driven far from equilibrium by a femtosecond laser pulse. A controversy in conventional description of the reflectivity of metals is looked upon by means of pump–probe white light set-up.

The family of materials (EDO-TTF)2XF6 represents quasi-one-dimensional ¼ filled systems exhibiting insulator-to-metal (I-M) phase transition at thermal equilibrium. (EDO-TTF)2PF6 is known to undergo a photoinduced I-M conversion with cooperative response to light excitation. Here we use femtosecond pump-probe experiments to study the photoresponse of (EDO-TTF)2SbF6 made of a larger counter-anion SbF6 compared to the well studied (EDO-TTF)2PF6. In the early stage of the photoinduced process, we reveal a multi-component coherent oscillating feature. The evolution of this feature with excitation density and temperature points to the local nature of the photoswitching in (EDO-TTF)2SbF6. At longer timescale, we did not detect the features associated with the transformation to the M phase, albeit observed in the PF 6 derivative. We propose a scenario whereby the bigger size of the counter-anion in (EDO-TTF)2SbF6 hinders the establishment of this transformation at macroscopic scale.

Using pump-probe spectroscopy a Japanese research team studies the physical properties of an intrinsic topological insulator material. Monitoring initial non-equilibrium photo-excitation they find that Auger recombination is an essential relaxation mechanism, in addition to thermalization, cooling, and population relaxation and dominates for higher carrier densities.

For a better comprehension of hydrogen intercalation of graphene grown on a silicon carbide substrate, an advanced analytical technique is required. We report that with a carefully established measurement procedure it is possible to obtain a reliable and reproducible depth profile of bi-layer graphene (theoretical thickness of 0.69 nm) grown on the silicon carbide substrate by the Chemical Vapor Deposition method. Furthermore, we show that with depth resolution as good as 0.2 nm/decade, both hydrogen coming from the intercalation process and organic contamination can be precisely localized. As expected, hydrogen was found at the interface between graphene and the SiC substrate, while organic contamination was accumulated on the surface of graphene and did not penetrate into it. Such a precise measurement may prove to be invaluable for further characterization of 2D materials.

The two observables are complementary if they cannot be measured simultaneously, however they become maximally complementary if their eigenstates are mutually unbiased. Only then the measurement of one observable gives no information about the other observable. The spin projection operators onto three mutually orthogonal directions are maximally complementary only for the spin 1/2. For the higher spin numbers they are no longer unbiased. In this work we examine the properties of spin 1 Mutually Unbiased Bases (MUBs) and look for the physical meaning of the corresponding operators. We show that if the computational basis is chosen to be the eigenbasis of the spin projection operator onto some direction z, the states of the other MUBs have to be squeezed. Then, we introduce the analogs of momentum and position operators and interpret what information about the spin vector the observer gains while measuring them. Finally, we study the generation and the measurement of MUBs states by introducing the Fourier like transform through spin squeezing. The higher spin numbers are also considered., 7 pages, 3 figures, comments welcome

International audience; The spin-crossover compound [(TPA)Fe(TCC)]PF6 was experimentally investigated using time-resolved optical pump and supercontinuum probe technique. Changes of VIS optical density at thermal equilibrium of a crystal with different high-spin/low-spin fractions are compared to changes recorded picoseconds after femtosecond laser excitation. A white light snapshot of the high-spin state at 180 K is extracted from time-resolved spectra. Our results indicate that the temperature of the electronic state affects the absorption spectra of high- and low-spin states.