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Contains fulltext : 284396.pdf (Publisher’s version ) (Closed access) IRMMW-THz 2022

The ordinary Fano effect occurs in many-electron atoms and requires an autoionizing state. With such a state, photo-ionization may proceed via pathways that interfere, and the characteristic asymmetric resonance structures appear in the continuum. Here we demonstrate that Fano structure may also be induced without need of auto-ionization, by dressing the continuum with an ordinary bound state in any atom by a coupling laser. Using multi-photon processes gives complete, ultra-fast control over the interference. We show that a line-shape index q near unity (maximum asymmetry) may be produced in hydrogenic silicon donors with a relatively weak beam. Since the Fano lineshape has both constructive and destructive interference, the laser control opens the possibility of state-selective detection with enhancement on one side of resonance and invisibility on the other. We discuss a variety of atomic and molecular spectroscopies, and in the case of silicon donors we provide a calculation for a qubit readout application., Fano resonances occur in many platforms that have auto-ionizing states. Here the authors show that auto-ionizing states are not required for multi-photon Fano resonance in a Si:P system with significant screening by using a pump-probe method.

Special point defects in semiconductors have been envisioned as suitable components for quantum-information technology. The identification of new deep centers in silicon that can be easily activated and controlled is a main target of the research in the field. Vacancy-related complexes are suitable to provide deep electronic levels but they are hard to control spatially. With the spirit of investigating solid state devices with intentional vacancy-related defects at controlled position, here we report on the functionalization of silicon vacancies by implanting Ge atoms through single-ion implantation, producing Ge-vacancy (GeV) complexes. We investigate the quantum transport through an array of GeV complexes in a silicon-based transistor. By exploiting a model based on an extended Hubbard Hamiltonian derived from ab-initio results we find anomalous activation energy values of the thermally activated conductance of both quasi-localized and delocalized many-body states, compared to conventional dopants. We identify such states, forming the upper Hubbard band, as responsible of the experimental sub-threshold transport across the transistor. The combination of our model with the single-ion implantation method enables future research for the engineering of GeV complexes towards the creation of spatially controllable individual defects in silicon for applications in quantum information technologies.

Third-order non-linearities are important because they allow control over light pulses in ubiquitous high-quality centro-symmetric materials like silicon and silica. Degenerate four-wave mixing provides a direct measure of the third-order non-linear sheet susceptibility χ(3)L (where L represents the material thickness) as well as technological possibilities such as optically gated detection and emission of photons. Using picosecond pulses from a free electron laser, we show that silicon doped with P or Bi has a value of χ(3)L in the THz domain that is higher than that reported for any other material in any wavelength band. The immediate implication of our results is the efficient generation of intense coherent THz light via upconversion (also a χ(3) process), and they open the door to exploitation of non-degenerate mixing and optical nonlinearities beyond the perturbative regime., Light: Science & Applications, 10 (1), ISSN:2047-7538

Background: The wMel strain of Wolbachia has been successfully introduced into Aedes aegypti mosquitoes and subsequently shown to reduce transmission of dengue and other pathogens, under both laboratory and field conditions. Here we describe the entomological outcomes of wMel Wolbachia mosquito releases in two small communities in Nha Trang City in central Vietnam. Methods: The wMel strain of Wolbachia was backcrossed into local Aedes aegypti genotype and mosquito releases were undertaken by community members or by staff. Field monitoring was undertaken to track Wolbachia establishment in local Ae. aegypti mosquito populations. Ecological studies were undertaken to assess relationships between environmental factors and the spatial and temporal variability in Wolbachia infection prevalence in mosquitoes. Results: Releases of wMel Wolbachia Ae. aegypti mosquitoes in two small communities in Nha Trang City resulted in the initial establishment of Wolbachia in the local Ae. aegypti mosquito populations, followed by seasonal fluctuations in Wolbachia prevalence. There was significant small-scale spatial heterogeneity in Wolbachia infection prevalence in the Tri Nguyen Village site, resulting in the loss of wMel Wolbachia infection in mosquitoes in north and center areas, despite Wolbachia prevalence remaining high in mosquitoes in the south area. In the second site, Vinh Luong Ward, Wolbachia has persisted at a high level in mosquitoes throughout this site despite similar seasonal fluctuations in wMel Wolbachia prevalence. Conclusion: Seasonal variation in Wolbachia infection prevalence in mosquitoes was associated with elevated temperature conditions, and was possibly due to imperfect maternal transmission of Wolbachia. Heterogeneity in Wolbachia infection prevalence was found throughout one site, and indicates additional factors may influence Wolbachia establishment.

The absorption of multiple photons when there is no resonant intermediate state is a well-known nonlinear process in atomic vapours, dyes and semiconductors. The N-photon absorption (NPA) rate for donors in semiconductors scales proportionally from hydrogenic atoms in vacuum with the dielectric constant and inversely with the effective mass, factors that carry exponents 6N and 4N, respectively, suggesting that extremely large enhancements are possible. We observed 1PA, 2PA and 3PA in Si: P with a terahertz free-electron laser. The 2PA coefficient for 1s-2s at 4.25 THz was 400,000,000 GM (= 4 x 10(-42) cm(4) s), many orders of magnitude larger than is available in other systems. Such high cross-sections allow us to enter a regime where the NPA cross-section exceeds that of 1 PA-that is, when the intensity approaches the binding energy per Bohr radius squared divided by the uncertainty time (only 3.84 MW cm(-2) in silicon)-and will enable new kinds of terahertz quantum control.

Randomly-doped silicon has many competitive advantages for quantum computation; not only is it fast to fabricate but it could naturally contain high numbers of qubits and logic gates as a function of doping densities. We determine the densities of entangling gates in randomly doped silicon comprising two different dopant species. First, we define conditions and plot maps of the relative locations of the dopants necessary for them to form exchange interaction mediated entangling gates. Second, using nearest neighbour Poisson point process theory, we calculate the doping densities necessary for maximal densities of single and dual-species gates. We find agreement of our results with a Monte Carlo simulation, for which we present the algorithms, which handles multiple donor structures and scales optimally with the number of dopants and use it to extract donor structures not captured by our Poisson point process theory. Third, using the moving average cluster expansion technique, we make predictions for a proof of principle experiment demonstrating the control of one species by the orbital excitation of another. These combined approaches to density optimization in random distributions may be useful for other condensed matter systems as well as applications outside physics., 14 pages, 10 figures

Arrays of dopants in silicon are promising platforms for the quantum simulation of the Fermi-Hubbard model. We show that the simplest model with only on-site interaction is insufficient to describe the physics of an array of phosphorous donors in silicon due to the strong intersite interaction in the system. We also study the resonant tunneling transport in the array at low temperature as a mean of probing the features of the Hubbard physics, such as the Hubbard bands and the Mott gap. Two mechanisms of localization which suppresses transport in the array are investigated: The first arises from the electron-ion core attraction and is significant at low filling; the second is due to the sharp oscillation in the tunnel coupling caused by the intervalley interference of the donor electron's wave function. This disorder in the tunnel coupling leads to a steep exponential decay of conductance with channel length in one-dimensional arrays, but its effect is less prominent in two-dimensional ones. Hence, it is possible to observe resonant tunneling transport in a relatively large array in two dimensions.

Excited states of a single donor in bulk silicon have previously been studied extensively based on effective mass theory. However, a proper theoretical description of the excited states of a donor cluster is still scarce. Here we study the excitations of lines of defects within a single-valley spherical band approximation, thus mapping the problem to a scaled hydrogen atom array. A series of detailed full configuration-interaction and time-dependent hybrid density-functional theory calculations have been performed to understand linear clusters of up to 10 donors. Our studies illustrate the generic features of their excited states, addressing the competition between formation of inter-donor ionic states and intra-donor atomic excited states. At short inter-donor distances, excited states of donor molecules are dominant, at intermediate distances ionic states play an important role, and at long distances the intra-donor excitations are predominant as expected. The calculations presented here emphasise the importance of correlations between donor electrons, and are thus complementary to other recent approaches that include effective mass anisotropy and multi-valley effects. The exchange splittings between relevant excited states have also been estimated for a donor pair and for a three-donor arrays; the splittings are much larger than those in the ground state in the range of donor separations between 10 and 20 nm. This establishes a solid theoretical basis for the use of excited-state exchange interactions for controllable quantum gate operations in silicon., Comment: 14 pages, 6 figures