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The properties of transparent conductive materials based on wide-gap zinc oxide semiconductors are considered, which are promising in their application to photovoltaics and liquid crystal displays. The impact of aluminum doping on the conductivity of thin ZnO films is examined. Temperature studies of the concentration, mobility, and resistivity in the temperature range of 77–300 K are conducted, revealing the metal conductivity of highly doped films. The electroactivity of aluminum as a donor impurity in the ZnO lattice is studied for thin films grown using atomic layer deposition on glass and silicone, containing 1–7 at. % aluminum. The reasons behind the low electroactivity of Al in ZnO are discussed, as are the methods for its enhancement.

We have studied the magnetoresistivity, thermoelectric power, and magnetic susceptibility of lanthanum manganite LaMnO3+x with different γ-Mn2O3 contents at 77–300 K. The specimens were obtained by high-temperature direct synthesis of lanthanum and manganese oxides. For all the specimens, we established ferromagnetic ordering with Curie point 220–245 K, accompanied by appearance of negative magnetoresistivity, catastrophic growth of magnetic susceptibility, and semiconductor conductivity. The maximum negative magnetoresistivity (δH ≈ −13%) is characteristic for two-phase samples with the lowest oxygen content.