Back to Search Start Over

The physics of high-conductivity transparent materials based on wide-band zinc oxide

Authors :
L. I. Petrosyan
Marek Godlewski
L. I. Ovsiannikova
G. V. Lashkarev
R. Pietruszka
V. V. Kartuzov
V. V. Khomyak
M. V. Dranchuk
V. A. Karpyna
Source :
Low Temperature Physics. 43:515-519
Publication Year :
2017
Publisher :
AIP Publishing, 2017.

Abstract

The properties of transparent conductive materials based on wide-gap zinc oxide semiconductors are considered, which are promising in their application to photovoltaics and liquid crystal displays. The impact of aluminum doping on the conductivity of thin ZnO films is examined. Temperature studies of the concentration, mobility, and resistivity in the temperature range of 77–300 K are conducted, revealing the metal conductivity of highly doped films. The electroactivity of aluminum as a donor impurity in the ZnO lattice is studied for thin films grown using atomic layer deposition on glass and silicone, containing 1–7 at. % aluminum. The reasons behind the low electroactivity of Al in ZnO are discussed, as are the methods for its enhancement.

Details

ISSN :
10906517 and 1063777X
Volume :
43
Database :
OpenAIRE
Journal :
Low Temperature Physics
Accession number :
edsair.doi...........4418720ee6d32e717d7cd92cf2816ce6
Full Text :
https://doi.org/10.1063/1.4984077