1. Highly-crystalline 6 inch free-standing GaN observed using X-ray diffraction topography
- Author
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Toshihide Nabatame, Okkyun Seo, Osami Sakata, Yasuo Koide, Jaemyung Kim, and Loku Singgappulige Rosantha Kumara
- Subjects
010302 applied physics ,Materials science ,business.industry ,02 engineering and technology ,General Chemistry ,Substrate (electronics) ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Epitaxy ,01 natural sciences ,Crystal ,Crystallinity ,0103 physical sciences ,X-ray crystallography ,Optoelectronics ,General Materials Science ,Diffraction topography ,Wafer ,0210 nano-technology ,business ,Single crystal - Abstract
We demonstrate the crystal quality of a 6 inch (0001) plane free-standing GaN substrate grown using a Na-flux based liquid phase epitaxy method. The 114 rocking curve profiles of every point over the substrate were recorded by synchrotron X-ray diffraction topography. The reconstructed images show that there is a huge boundary between the high crystalline area and the low crystalline area in the substrate. Anisotropic bowing of the lattice planes with respect to the [100] direction was obtained from wafer bending analysis. The mean width of the rocking curves over the wafer was 0.024°, which indicates that the newly fabricated 6 inch GaN substrate was almost a single crystal. We found that there was a competition between crystallinity and homogeneity.
- Published
- 2021