1. Evidence of
- Author
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David, Garagnani, Paola, De Padova, Carlo, Ottaviani, Claudio, Quaresima, Amanda, Generosi, Barbara, Paci, Bruno, Olivieri, Mieczysław, Jałochowski, and Mariusz, Krawiec
- Abstract
One-monolayer (ML) (thin) and 5-ML (thick) Si films were grown on the α-phase Si(111)√3 × √3R30°-Bi at a low substrate temperature of 200 °C. Si films have been studied in situ by reflection electron energy loss spectroscopy (REELS) and Auger electron spectroscopy, as a function of the electron beam incidence angle α and low-energy electron diffraction (LEED), as well as ex situ by grazing incidence X-ray diffraction (GIXRD). Scanning tunneling microscopy (STM), and scanning tunneling spectroscopy (STS) were also reported. The REELS spectra, taken at the Si K absorption edge (~1.840 KeV), reveal the presence of two distinct loss structures attributed to transitions 1
- Published
- 2022