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When using a single DC/DC converter with multiple outputs and having a buck topology, which has one filter inductor per output, the designer can choose to couple these outputs together. This paper demonstrates additional benefits of coupling output inductors together. Apart from saving mass and volume, and due to an improved small signal behaviour it also reduces the output impedance of the regulated output. The paper will analyse a seven output push-pull converter used as a space power converter module and verify the theoretical results with experimental measurements.

This paper calculates the failure rate on reversed polarized silicon diodes with the aim to justify, experimentally, the rules of the European Space Agency (ESA) which are referred to the component life’s extension, the reliability increase and the end of life performance enhancement, by using oversized devices (derating rules). In order to verify the derating rules, 80 silicon diodes are used, which are reverse polarized in a high temperature environment. The diodes are divided in 4 groups of 20 diodes, applying a different voltage to each group, in order to relate the failure rate to the applied derating rule. The experiment described in this paper is developed using a temperature accelerated test to check the leakage current in reverse polarization (HTRB - High Temperature Reverse Bias), with the purpose of obtaining results applying an acceleration factor in order to reduce the test duration. By using a thermal model of the whole system and the equations that describe the reverse polarized diode behaviour, it is possible to stress the 80 diodes up to very high temperature avoiding the runaway effect. Finally, the failure rate is calculated and a revision of the derating rules are proposed by using the experimental result obtained.

The aim of this paper is to make an introduction, review and preliminary investigation tasks of the application of Silicon Carbide (SiC) power semiconductors and magnetoresistive (MR) current sensors for Solid State Power Controllers (SSPCs) and controlled switches, especially for high temperature environment and/or high voltage applications.

This paper presents the benefits and drawbacks of replacing the traditional Si Mosfets transistors with enhancement mode GaN transistors in a Half-Bridge Zero Voltage and Zero Current Switching Power Switching (ZVZCPS) converter. This type of converters is usually used as Electronic Power Converters (EPC) for telecommunication satellites travelling-wave tube amplifiers (TWTAs). In this study, firstly the converter is theoretically analysed, obtaining its operation, losses and efficiency equations. From these equations, optimizations maps based on the main system parameters are obtained. These optimization maps are the key to quantify the potential benefits of GaN transistors in this type of converters. Theoretical results show that using GaN transistors, the frequency of the converter can be pushed from 125kHz to 830kHz without sacrificing the converter efficiency. This frequency increase is directly related to reduction on the EPC size and weight.