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Benefits and Drawbacks of A High Frequency Gan Zvzcps Converter

Authors :
Blanes J. M.
Garrigós A.
Gutierrez R.
Carrasco J. A.
Maset E.
Ejea J.B
Sanchis-Kilders E.
Ferreres A.
Lizán J. L.
Source :
E3S Web of Conferences, Vol 16, p 14006 (2017)
Publication Year :
2017
Publisher :
EDP Sciences, 2017.

Abstract

This paper presents the benefits and drawbacks of replacing the traditional Si Mosfets transistors with enhancement mode GaN transistors in a Half-Bridge Zero Voltage and Zero Current Switching Power Switching (ZVZCPS) converter. This type of converters is usually used as Electronic Power Converters (EPC) for telecommunication satellites travelling-wave tube amplifiers (TWTAs). In this study, firstly the converter is theoretically analysed, obtaining its operation, losses and efficiency equations. From these equations, optimizations maps based on the main system parameters are obtained. These optimization maps are the key to quantify the potential benefits of GaN transistors in this type of converters. Theoretical results show that using GaN transistors, the frequency of the converter can be pushed from 125kHz to 830kHz without sacrificing the converter efficiency. This frequency increase is directly related to reduction on the EPC size and weight.

Subjects

Subjects :
Environmental sciences
GE1-350

Details

Language :
English, French
ISSN :
22671242
Volume :
16
Database :
Directory of Open Access Journals
Journal :
E3S Web of Conferences
Publication Type :
Academic Journal
Accession number :
edsdoj.19ecac64130048dc9416874702187a94
Document Type :
article
Full Text :
https://doi.org/10.1051/e3sconf/20171614006