233 results on '"Yonenaga, I."'
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2. Nanoscopic analysis of oxygen segregation at tilt boundaries in silicon ingots using atom probe tomography combined with TEM and ab initio calculations
3. A novel constitutive model for semiconductors: The case of silicon
4. Longitudinal Muon Spin Depolarization in Ge-Rich SiGe Alloys
5. Optical properties of fresh dislocations in GaN
6. How to best measure atomic segregation to grain boundaries by analytical transmission electron microscopy
7. Cellular structures in Czochralski-grown SiGe bulk crystal
8. Point defects generated by oxidation of silicon crystal surface
9. Evidence for a shallow muonium acceptor state in Ge-rich [formula omitted]
10. Recent knowledge of strength and dislocation mobility in wide band-gap semiconductors
11. Muonium acceptor states in high Ge [formula omitted] alloys
12. Formation of multiple nanoscale twin boundaries that emit intense light in indirect-gap AlGaAs epilayers
13. Segregation of boron in germanium crystal
14. Determination of carrier mobility vs resistivity relation in Czochralski-grown n- and p-type Si x Ge1−x (0.93 < x < 0.96) single crystals
15. Dynamics and characters of dislocations in ZnSe
16. Dislocation structures in tetragonal hen egg-white lysozyme crystals using synchrotron white-beam topography
17. Control of the stacking fault areas in pseudomorphic ZnSe layers by photo-molecular beam epitaxy
18. Muonium defect states and ionization energies in SiGe alloys
19. Oxygen defects in langasite (La 3Ga 5SiO 14) single crystal grown by vertical Bridgman (VB) method
20. Electronic properties of nanoscale multiple twin boundaries in indirect-gap AlGaAs
21. Atomistic structure of stacking faults in a commercial GaAs:Si wafer revealed by cross-sectional scanning tunneling microscopy
22. Influence of high-magnetic-field on dislocation–oxygen interaction in silicon
23. Atomistic structure and strain relaxation in Czochralski-grown Si x Ge1−x bulk alloys
24. Dislocation of high quality P-doped ZnTe substrate examined by X-ray topography
25. Photoluminescence Study of Plastically Deformed GaN
26. Nitrogen effects on generation and velocity of dislocations in Czochralski-grown silicon
27. Dislocation behavior in highly impurity-doped Si
28. Dislocation of high-quality large DCP-ZnTe substrate examined by photoluminescence and X-ray topography
29. Yield strength and dislocation mobility in plastically deformed ZnSe
30. Photoluminescence of dislocations in plastically deformed GaN
31. Segregation coefficients of various dopants in Si xGe 1−x (0.93< x
32. High Temperature Hardness of Bulk Single Crystal GaN
33. Growth and mechanical properties of GeSi bulk crystals
34. Dislocation–impurity interaction in Si
35. High-temperature strength of bulk single crystals of III-V nitrides
36. Atomistic structure and strain relaxation in Czochralski-grown SixGe1−x bulk alloys
37. Disorder-induced broadening of transverse acoustic phonons in Si xGe 1− x mixed crystals
38. Local atomic structure in Czochralski-grown Ge 1− xSi x bulk alloys
39. Diffusion and solubility of zinc in dislocation-free and plastically deformed silicon crystals
40. High quality p-type ZnO film grown on ZnO substrate by nitrogen and tellurium co-doping
41. Local strain relaxation in Czochralski-grown GeSi bulk alloys
42. Hydrogen behaviour in bulk Si1−xGex alloys as modelled by muonium
43. Jahn–Teller distortion of neutral divacancy in Si studied by positron annihilation spectroscopy
44. ESR signature of tetra-interstitial defect in silicon
45. Dislocation–impurity interaction in Si
46. Muonium behaviour in Czochralski grown Si 1− xGe x alloys
47. X-ray topographic observation of dislocation generation at the seed/crystal interface of Czochralski-grown Si highly doped with B impurity
48. Thermocyclic stability of candidate Seebeck coefficient standard reference materials at high temperature.
49. High Temperature Hardness of Bulk Single Crystal GaN
50. Dislocation behavior in heavily impurity doped Si
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