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The receptor-like kinase Suppressor of BIR1 (SOBIR1) binds various receptor-like proteins (RLPs) that perceive microbe-associated molecular patterns (MAMPs) at the plasma membrane, which is thought to activate plant pattern-triggered immunity (PTI) against pathogen invasion. Despite its potentially crucial role, how SOBIR1 transmits immune signaling to ultimately elicit PTI remains largely unresolved. Herein, we report that a Nicotiana benthamiana gene NbRLP1, like NbSOBIR1, was highly induced upon Phytophthora parasitica infection. Intriguingly, NbRLP1 is characterized as a receptor-like protein localizing to the endoplasmic reticulum (ER) membrane rather than the plasma membrane. Using bimolecular fluorescence complementation and affinity purification assays, we established that NbRLP1 is likely to associate with NbSOBIR1 through the contact between the ER and plasma membrane. We further found that NbSOBIR1 at the plasma membrane partitions into mobile microdomains that undergo frequent lateral movement and internalization. Remarkably, the dynamics of NbSOBIR1 microdomain is coupled to the remodeling of the cortical ER network. When NbSOBIR1 microdomains were induced by the P. parasitica MAMP ParA1, tobacco cells overexpressing NbRLP1 accelerated NbSOBIR1 internalization. Overexpressing NbRLP1 in tobacco further exaggerated the ParA1-induced necrosis. Together, these findings have prompted us to propose that ER and the ER-localized NbRLP1 may play a role in transmitting plant immune signals by regulating NbSOBIR1 internalization.

AlN films were deposited on Si substrates using a reactive RF magnetron sputtering process and then the films were annealed by using different laser powers and wavelengths (355 nm, 532 nm and 1064 nm). For all three laser systems, the (002) peak intensity was obviously improved following laser irradiation. The improvement in the crystalline property was particularly obtained in the AlN film processed at 355 nm. In particular, given the use of the optimal laser power (0.025 W), the (002) peak intensity was 58.7% higher than that of the as-deposited film. The resonant frequency and 3 dB bandwidth of a SMR filter with an unprocessed AlN film were found to be 2850 MHz and 227.81 MHz, respectively. Following laser treatment with a wavelength of 1064 nm and a power of 0.25 W, the resonant frequency changed from 2850 to 2858 MHz. Moreover, 3 dB bandwidth changed from 227.81 to 202.49 MHz and the return loss of the filter reduced from 17.28 to 16.48 dB. Overall, the results thus show that the frequency response of the SMR filter can be adjusted and the return loss reduced by means of laser treatment with an appropriate wavelength.

In this study, piezoelectric zinc oxide (ZnO) thin film was deposited on the Pt/Ti/SiNx/Si substrate to construct the FBAR device. The Pt/Ti multilayers were deposited on SiNx/Si as the bottom electrode and the Al thin film was deposited on the ZnO piezoelectric layer as the top electrode by a DC sputtering system. The ZnO thin film was deposited onto the Pt thin film by a radio frequency (RF) magnetron sputtering system. The cavity on back side for acoustic reflection of the FBAR device was achieved by KOH solution and reactive ion etching (RIE) processes. The crystalline structures and surface morphologies of the films were analyzed by X-ray diffraction (XRD) and field emission scanning electron microscope (FE-SEM). The optimized as-deposited ZnO thin films with preferred (002)-orientation were obtained under the sputtering power of 80 W and sputtering pressure of 20 mTorr. The crystalline characteristics of ZnO thin films and the frequency responses of the FBAR devices can be improved by using the rapid thermal annealing (RTA) process. The optimized annealing temperature and annealing time are 400 °C and 10 min, respectively. Finally, the FBAR devices with structure of Al/ZnO/Pt/Ti/SiNx/Si were fabricated. The frequency responses showed that the return loss of the FBAR device with RTA annealing was improved from −24.07 to −34.66 dB, and the electromechanical coupling coefficient (kt2) was improved from 1.73% to 3.02% with the resonance frequency of around 3.4 GHz.

The most important parameter of piezoelectric materials is piezoelectric coefficient (d33). In this study, the piezoelectric ZnO thin films were deposited on the SiNx/Si substrate. The 4 inches substrate is diced into 8 cm× 8 cm piece. During the deposition process, a zinc target (99.999 wt%) of 2 inches diameter was used. The vertical distance between the target and the substrate holder was fixed at 5 cm. The piezoelectric response of zinc oxide (ZnO) thin films were obtained by using a direct measurement system. The system adopts a mini impact tip to generate an impulsive force and read out the piezoelectric signals immediately. Experimentally, a servo motor is used to produce a fixed quantity of force, for giving an impact against to the piezoelectric film. The ZnO thin films were deposited using the reactive radio frequency (RF) magnetron sputtering method. The electric charges should be generated because of the material’s extrusion. This phenomenon was investigated through the oscilloscope by one shot trigger. It was apparent that all ZnO films exhibit piezoelectric responses evaluated by our measurement system, however, its exhibit a significant discrepancy. The piezoelectric responses of ZnO thin film at various deposition positions were measured and the crystal structures of the sputtering pressure were also discussed. The crystalline characteristics of ZnO thin films are investigated through the XRD and SEM. The results show the ZnO thin film exhibits good crystalline pattern and surface morphology with controlled sputtering condition. The ZnO thin films sputtered using 2 inches target present various piezoelectric responses. With the exactly related position, a best piezoelectric response of ZnO thin film can be achieved.

High-frequency Rayleigh-mode surface acoustic wave (SAW) devices were fabricated for 4G mobile telecommunications. The RF magnetron sputtering method was adopted to grow piezoelectric aluminum nitride (AlN) thin films on the Si3N4/Si substrates. The influence of sputtering parameters on the crystalline characteristics of AlN thin films was investigated. The interdigital transducer electrodes (IDTs) of aluminum (Al) were then fabricated onto the AlN surfaces by using the electron beam (e-beam) direct write lithography method to form the Al/AlN/Si3N4/Si structured SAW devices. The Al electrodes were adopted owing to its low resistivity, low cost, and low density of the material. For 4G applications in mobile telecommunications, the line widths of 937 nm, 750 nm, 562 nm, and 375 nm of IDTs were designed. Preferred orientation and crystalline properties of AlN thin films were determined by X-ray diffraction using a Siemens XRD-8 with CuKαradiation. Additionally, the cross-sectional images of AlN thin films were obtained by scanning electron microscope. Finally, the frequency responses of high-frequency SAW devices were measured using the E5071C network analyzer. The center frequencies of the high-frequency Rayleigh-mode SAW devices of 1.36 GHz, 1.81 GHz, 2.37 GHz, and 3.74 GHz are obtained. This study demonstrates that the proposed processing method significantly contributes to high-frequency SAW devices for wireless communications.