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Phase‐change random‐access memory (PCRAM) devices suffer from pronounced resistance drift originating from considerable structural relaxation of phase‐change materials (PCMs), which hinders current developments of high‐capacity memory and high‐parallelism computing that both need reliable multibit programming. This work realizes that compositional simplification and geometrical miniaturization of traditional GeSbTe‐like PCMs are feasible routes to suppress relaxation. While to date, the aging mechanisms of the simplest PCM, Sb, at nanoscale, have not yet been unveiled. Here, this work demonstrates that in an optimal thickness of only 4 nm, the thin Sb film can enable a precise multilevel programming with ultralow resistance drift coefficients, in a regime of ≈10−4–10−3. This advancement is mainly owed to the slightly changed Peierls distortion in Sb and the less‐distorted octahedral‐like atomic configurations across the Sb/SiO2 interfaces. This work highlights a new indispensable approach, interfacial regulation of nanoscale PCMs, for pursuing ultimately reliable resistance control in aggressively‐miniaturized PCRAM devices, to boost the storage and computing efficiencies substantially. [ABSTRACT FROM AUTHOR]

Objective: The effectiveness of arthroscopic rotator cuff repair (ARCR) on rheumatoid arthritis (RA) patients remains a controversial topic. This study investigates the mid‐term outcomes of ARCR in RA patients and identifies the factors influencing clinical efficacy. Methods: This retrospective study enrolled RA patients with small or medium rotator cuff tears (RCTs) between February 2014 and February 2019. Visual Analog Scale (VAS), American Shoulder and Elbow Surgeons (ASES), and Constant–Murley scores were collected at each follow‐up time. Ultimately, magnetic resonance imaging (MRI) and X‐ray were employed to assess rotator cuff integrity and progression of shoulder bone destruction, respectively. Statistical methods used two‐way repeated‐measures ANOVA or generalized estimation equations. Results: A total of 157 patients were identified and divided into ARCR (n = 75) and conservative treatment (n = 82) groups. ARCR group continued to be divided into small tear (n = 35) and medium tear (n = 40) groups. At the final, all scores were better in ARCR group than in the conservative treatment group (p < 0.05). A radiographic evaluation of the final follow‐up demonstrated that the progression rate in ARCR group (18.67%) was significantly lower than that of the conservative treatment group (39.02%, p < 0.05). In the comparison of the small tear and medium tear groups, all scores increased significantly after surgery (p < 0.05), and the final follow‐up scores were better than preoperative scores (p < 0.05) but worse than those of the 6‐month postoperative follow‐up (p < 0.05). Comparison between the two groups revealed that all scores of the small tear group were significantly better than those of the medium tear group at 6‐month postoperative follow‐up (p < 0.05). Although the scores of small tear group remained better than those of the medium group at the final postoperative follow‐up, the difference was not statistically significant (p > 0.05). Radiographic assessment of the final follow‐up demonstrated that the progression rate in the small tear group (8.57%) was significantly lower than that in the medium group (27.50%, p < 0.05), and the retear rate of small tear group (14.29%) was significantly lower than that of the medium tear group (35.00%, p < 0.05). Conclusion: ARCR could effectively improve the quality of life for RA patients with small or medium RCTs, at least in the medium term. Despite the progression of joint destruction in some patients, postoperative retear rates were comparable to those in the general population. ARCR is more likely to benefit RA patients than conservative treatment. [ABSTRACT FROM AUTHOR]

Ferroelectric memory is a promising candidate for next‐generation nonvolatile memory owing to its outstanding performance such as low power consumption, fast speed, and high endurance. However, the ferroelectricity of conventional ferroelectric materials will be eliminated by the depolarization field when the size drops to the nanometer scale. As a result, the miniaturization of ferroelectric devices was hindered, which makes ferroelectric memory unable to keep up with the development of integrated‐circuit (IC) miniaturization. Recently, a two‐dimensional (2D) In2Se3 was reported to maintain stable ferroelectricity at the ultrathin scale, which is expected to break through the bottleneck of miniaturization. Soon, devices based on 2D In2Se3, including the ferroelectric field‐effect transistor, ferroelectric channel transistor, synaptic ferroelectric semiconductor junction, and ferroelectric memristor were demonstrated. However, a comprehensive understanding of the structures and the ferroelectric‐switching mechanism of 2D In2Se3 is still lacking. Here, the atomic structures of different phases, the dynamic mechanism of ferroelectric switching, and the performance/functions of the latest devices of 2D In2Se3 are reviewed. Furthermore, the correlations among the structures, the properties, and the device performance are analyzed. Finally, several crucial problems or challenges and possible research directions are put forward. We hope that this review paper can provide timely knowledge and help for the research community to develop 2D In2Se3 based ferroelectric memory and computing technology for practical industrial applications. [ABSTRACT FROM AUTHOR]

Excitonic devices based on two-dimensional (2D) transition metal dichalcogenides (TMDCs) can combine spintronics with valleytronics due to its special energy band structure. In this work, we studied the generation and relaxation processes of spin/valley polarized excitons dynamics in monolayer WSe2 and its van der Waals (vdW) heterojunction with graphene using a circularly polarized femtosecond pump–probe system. The spin/valley depolarization dynamics of the A exciton in monolayer WSe2 is found to exhibit a biexponential decay. The fast relaxation process is due to the ultrafast intervalley electron–hole spin–flip exchange coupling and electron–phonon scattering. And the slow relaxation process originates from the recombination and relaxation of the trion states. Graphene has an electron extraction effect on WSe2, which prevents the formation of trions. Therefore, the spin/valley depolarization process of the A exciton in the heterojunction exhibits only a fast relaxation process. In both monolayer WSe2 and its heterojunction with graphene, B/A′ excitons exhibit a negative spin/valley polarization which is mainly due to two-photon absorption and excited Bose scattering. Our work systematically studied the spin/valley depolarization dynamics of excitons and revealed possible mechanisms of their differences in isolated 2D WSe2 and vdW heterojunctions. [ABSTRACT FROM AUTHOR]

Ultrafast laser-induced phase/structural transitions show a great potential in optical memory and optical computing technologies, which are believed to have advantages of ultrafast speed, low power consumption, less heat diffusion and remote control as compared with electronic devices. Here, we review and discuss the principles of orbital-selective electronic excitation and its roles in phase/structural transitions of phase-change memory (PCM) materials, including Sc0.2Sb1.8Te3 and GeTe phases. It is demonstrated, that the mechanism can influence the dynamics or results of structural transitions, such as an ultrafast amorphization of Sc0.2Sb1.8Te3 and a non-volatile order-to-order structural transition of GeTe. Without thermal melting, these structural transitions have the advantages of ultrafast speed and low power consumption. It suggests that the orbital-selective electronic excitation can play a significant role in discovering new physics of phase change and shows a potential for new applications. [ABSTRACT FROM AUTHOR]

Exciton related processes in two-dimensional (2D) transition metal dichalcogenides (TMDCs) play important roles in their optoelectronic applications. In this work, through broadband transient absorption spectroscopy, the electronic band structure evolution, exciton energy shifting dynamics and power-dependence spectral characteristics of WSe2 layers, including monolayer, bilayer, tri-layer and bulk WSe2 under 400 nm and 800 nm excitations are investigated. Particularly, under 400 nm excitation, due to the hot-exciton effect, the A-exciton energy shifting dynamics in WSe2 layers have been analysized in detail, where thicker WSe2 samples possess slower hot-exciton cooling lifetimes, and the exciton recombination approaches are affected by the band structure and interlayer interactions, in comparison with that under 800 nm excitation. The power-dependence spectral evolution in WSe2 layers suggests that the charged states like trions could be facilitated in tri-layer WSe2 (or thicker samples) at the same experimantal conditions. These findings in WSe2 layers could provide a deep insight into the hot-exciton related processes in 2D TMDCs from transient experiments ponit of view. [ABSTRACT FROM AUTHOR]

First-principles calculations reveal a Mexican-hat potential energy surface (PES) for two-dimensional (2D) In2Se3. This unique PES leads to a pseudo-centrosymmetric paraelectric β phase that resolves the current controversy between theory and experiment. We further show that while the α-to-β (ferroelectric-to-paraelectric) phase transition is fast and coherent, assisted by an in-plane shear phonon mode, a random distribution of the atoms in the trough of the PES acts as an entropy barrier against the reverse β-to-α transition. This will be the origin of the speed limitation of current In2Se3 ferroelectric devices. However, if one orders the β phase (due to the formation of in-plane ferroelectric domains), the reverse transition can take place within tens of picoseconds in the presence of a perpendicular electric field. Finally, the Mexican-hat PES is a general feature for the entire family of 2D III2-VI3 materials. Our finding offers a critical physical picture in controlling the ultrafast reversible phase transition in 2D In2Se3 and other III2-VI3 materials, which will benefit their practical industrial development for advanced ferroelectric devices. [ABSTRACT FROM AUTHOR]

One central task of developing nonvolatile phase change memory (PCM) is to improve its scalability for high‐density data integration. In this work, by first‐principles molecular dynamics, to date the thinnest PCM material possible (0.8 nm), namely, a monolayer Sb2Te3, is proposed. Importantly, its SET (crystallization) process is a fast one‐step transition from amorphous to hexagonal phase without the usual intermediate cubic phase. An increased spatial localization of electrons due to geometrical confinement is found to be beneficial for keeping the data nonvolatile in the amorphous phase at the 2D limit. The substrate and superstrate can be utilized to control the phase change behavior: e.g., with passivated SiO2 (001) surfaces or hexagonal Boron Nitride, the monolayer Sb2Te3 can reach SET recrystallization in 0.54 ns or even as fast as 0.12 ns, but with unpassivated SiO2 (001), this would not be possible. Besides, working with small volume PCM materials is also a natural way to lower power consumption. Therefore, the proposed PCM working process at the 2D limit will be an important potential strategy of scaling the current PCM materials for ultrahigh‐density data storage. [ABSTRACT FROM AUTHOR]

One central task of developing nonvolatile phase change memory (PCM) is to improve its scalability for high‐density data integration. In this work, by first‐principles molecular dynamics, to date the thinnest PCM material possible (0.8 nm), namely, a monolayer Sb2Te3, is proposed. Importantly, its SET (crystallization) process is a fast one‐step transition from amorphous to hexagonal phase without the usual intermediate cubic phase. An increased spatial localization of electrons due to geometrical confinement is found to be beneficial for keeping the data nonvolatile in the amorphous phase at the 2D limit. The substrate and superstrate can be utilized to control the phase change behavior: e.g., with passivated SiO2 (001) surfaces or hexagonal Boron Nitride, the monolayer Sb2Te3 can reach SET recrystallization in 0.54 ns or even as fast as 0.12 ns, but with unpassivated SiO2 (001), this would not be possible. Besides, working with small volume PCM materials is also a natural way to lower power consumption. Therefore, the proposed PCM working process at the 2D limit will be an important potential strategy of scaling the current PCM materials for ultrahigh‐density data storage. [ABSTRACT FROM AUTHOR]

One central task of developing nonvolatile phase change memory (PCM) is to improve its scalability for high‐density data integration. In this work, by first‐principles molecular dynamics, to date the thinnest PCM material possible (0.8 nm), namely, a monolayer Sb2Te3, is proposed. Importantly, its SET (crystallization) process is a fast one‐step transition from amorphous to hexagonal phase without the usual intermediate cubic phase. An increased spatial localization of electrons due to geometrical confinement is found to be beneficial for keeping the data nonvolatile in the amorphous phase at the 2D limit. The substrate and superstrate can be utilized to control the phase change behavior: e.g., with passivated SiO2 (001) surfaces or hexagonal Boron Nitride, the monolayer Sb2Te3 can reach SET recrystallization in 0.54 ns or even as fast as 0.12 ns, but with unpassivated SiO2 (001), this would not be possible. Besides, working with small volume PCM materials is also a natural way to lower power consumption. Therefore, the proposed PCM working process at the 2D limit will be an important potential strategy of scaling the current PCM materials for ultrahigh‐density data storage. [ABSTRACT FROM AUTHOR]

One central task of developing nonvolatile phase change memory (PCM) is to improve its scalability for high‐density data integration. In this work, by first‐principles molecular dynamics, to date the thinnest PCM material possible (0.8 nm), namely, a monolayer Sb2Te3, is proposed. Importantly, its SET (crystallization) process is a fast one‐step transition from amorphous to hexagonal phase without the usual intermediate cubic phase. An increased spatial localization of electrons due to geometrical confinement is found to be beneficial for keeping the data nonvolatile in the amorphous phase at the 2D limit. The substrate and superstrate can be utilized to control the phase change behavior: e.g., with passivated SiO2 (001) surfaces or hexagonal Boron Nitride, the monolayer Sb2Te3 can reach SET recrystallization in 0.54 ns or even as fast as 0.12 ns, but with unpassivated SiO2 (001), this would not be possible. Besides, working with small volume PCM materials is also a natural way to lower power consumption. Therefore, the proposed PCM working process at the 2D limit will be an important potential strategy of scaling the current PCM materials for ultrahigh‐density data storage. [ABSTRACT FROM AUTHOR]

Phase change memory (PCM) is an emerging non‐volatile data storage technology concerned by the semiconductor industry. To improve the performances, previous efforts have mainly focused on partially replacing or doping elements in the flagship Ge‐Sb‐Te (GST) alloy based on experimental "trial‐and‐error" methods. Here, the current largest scale PCM materials searching is reported, starting with 124 515 candidate materials, using a rational high‐throughput screening strategy consisting of criteria related to PCM characteristics. In the results, there are 158 candidates screened for PCM materials, of which ≈68% are not employed. By further analyses, including cohesive energy, bond angle analyses, and Born effective charge, there are 52 materials with properties similar to the GST system, including Ge2Bi2Te5, GeAs4Te7, GeAs2Te4, so on and other candidates that have not been reported, such as TlBiTe2, TlSbTe2, CdPb3Se4, etc. Compared with GST, materials with close cohesive energy include AgBiTe2, TlSbTe2, As2Te3, TlBiTe2, etc., indicating possible low power consumption. Through further melt‐quenching molecular dynamic calculation and structural/electronic analyses, Ge2Bi2Te5, CdPb3Se4, MnBi2Te4, and TlBiTe2 are found suitable for optical/electrical PCM applications, which further verifies the effectiveness of this strategy. The present study will accelerate the exploration and development of advanced PCM materials for current and future big‐data applications. [ABSTRACT FROM AUTHOR]

Reversible phase transitions between crystalline and amorphous phases of phase‐change memory (PCM) materials are the physical basis of PCM. Applications of PCM in multilevel memory, in‐memory computing, and neuromorphic computing require a precise control of material's structure/property to achieve signals beyond binary (0/1), where recrystallization is the key process because it is smooth compared with violent amorphization. By molecular dynamic simulations and electronic structure analyses based on density functional theory, nucleation dynamics during recrystallization are investigated from the point of view of atomic motions and property evolutions. Atomic motions are examined individually rather than statistically. According to the results, an atomic picture of the growth of the nucleus is described in detail, where the competition between the potential seeds of nucleus plays a critical role. The electron polarization during recrystallization is mapped to the linearly aligned atom chains. Further analyses of the Born effective charge confirm the delocalization of the electrons in the atom chains. Also, a large p‐orbital‐axial Born effective charge is observed in long‐range atom chains, which suggests a kind of resonance enhancement of electronic delocalization. These dynamics of nucleation in recrystallization provide references for the fine control of PCM performances. [ABSTRACT FROM AUTHOR]

Pioglitazone (PIO) attenuates cisplatin nephrotoxicity whereas the underlying mechanism remains unknown. Apoptosis is associated with mitochondrial dysfunction and SIRT1 activation can decrease cell apoptosis in cisplatin nephrotoxicity. Therefore, we explored whether the protective effect of PIO in cisplatin nephrotoxicity is achieved by suppressing mitochondria‐mediated apoptosis through SIRT1/p53 signalling regulation. Cell viability, apoptosis, survival rate, renal pathology and function were examined. Moreover, we also analysed the expression of SIRT1, Acetyl‐p53, mitochondrial membrane potential (MMP), reactive oxygen species (ROS), mitochondrial permeability transition pore (mPTP) opening, adenosine triphosphate (ATP) and apoptosis‐related protein in vivo and in vitro. Pioglitazone treatment significantly increased cell viability, promoted SIRT1‐p53 interaction, upregulated Bcl‐2 expression, activated SIRT1 and elevated mitochondrial ATP synthesis after cisplatin treatment. However, PIO decreased the generation of ROS, opening of mPTP, dissipation of MMP and translocation of cytochrome c after cisplatin treatment. Pioglitazone also reduced the activation of caspase‐3 and caspase‐9, lowered the ratio of Bax/Bcl‐2, attenuated kidney pathological damage and dysfunction, down‐regulated the expression of Acetyl‐p53, PUMA‐α and Bax and abated cell apoptosis after cisplatin treatment. The SIRT1 inhibitor, EX527, clearly reversed the protective effects of PIO. These results implied PIO attenuated cisplatin nephrotoxicity by suppressing mitochondria‐mediated apoptosis through regulating SIRT1/p53 signalling. [ABSTRACT FROM AUTHOR]

Lysin motif (LysM)-containing proteins function as pattern-recognition receptors in plants to recognize different N -acetylglucosamine-containing ligands, thereby triggering specific defense responses against pathogens. However, the biological functions of these proteins in animals remain unclear. In this study, we characterized a novel LysM protein, designated as Sp LysMD3, in mud crab Scylla paramamosain. The cDNA sequence of SpLysMD3 had 1058 bp with an open reading frame of 840 bp encoding a protein with 279 amino acid residues. The deduced protein contained a LysM domain and a transmembrane region. SpLysMD3 was highly expressed in gills, intestine, muscle, and hemocytes and upregulated after challenges with bacteria, suggesting that it may be involved in antibacterial defense. Binding assay showed that Sp LysMD3 possessed specific binding activities to all tested microorganisms as well as bacterial cell wall components lipopolysaccharide (LPS) and peptidoglycan (PGN), indicating that Sp LysMD3 was an important LPS- and PGN-binding protein in mud crab. Bacterial clearance assay revealed that coating bacteria with Sp LysMD3 accelerated bacterial clearance in vivo. The promotion of bacterial clearance by Sp LysMD3 was further determined by using SpLysMD3 -silenced crabs injected with S. aureus or V. parahemolyticus. Silencing SpLysMD3 dramatically suppressed the bacterial clearance. Meanwhile, knockdown of SpLysMD3 also severely impaired the expression of a specific set of antimicrobial peptides (AMPs); moreover, Sp LysMD3 overexpression can enhance the promoter activity of SpALF2. These results suggested that SpLysMD3 affected bacterial clearance by regulating AMPs. Collectively, all the results demonstrated that Sp LysMD3 may function as a potential receptor involved in innate immunity by binding to LPS and PGN and by regulating AMPs to eliminate invading pathogen. This study provided new insights into the biological functions of LysM proteins in animals and the mechanisms underlying the antibacterial activity of crustaceans. • Sp LysMD3 was membrane-bound protein with a lysin motif. • Sp LysMD3 displayed strong binding activity to PGN and LPS. • Sp LysMD3 knockdown suppressed bacterial clearance in vivo and some AMPs' expression. • Sp LysMD3 may act as a potential PRR involved in antibacterial immunity of mud crab. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) B–C–N alloys have recently attracted much attention but unfortunately, Chemical Vapor Deposition (CVD) B–C–N alloys typically phase separate. In spite of that, our analysis of the B–C–N alloy fabricated by electron-beam irradiation suggests that non-phase-separated B–C–N may in fact exist with a carbon concentration up to 14 at%. While this analysis points to a new way to overcome the phase-separation in 2D B–C–N, by first-principles calculations, we show that these B–C–N alloys are made of motifs with even numbers of carbon atoms, in particular, dimers or six-fold rings (in a molecule-like form), embedded in a 2D BN network. Moreover, by tuning the carbon concentration, the band gap of the B–C–N alloys can be reduced by 35% from that of BN. Due to a strong overlap of the wavefunctions at the conduction band and valance band edges, the non-phase-separated B–C–N alloys maintain the strong optical absorption of BN. [ABSTRACT FROM AUTHOR]

Micro-ripple and micro-bead structures are formed on a silicon (Si) surface after irradiation with femtosecond laser pulses in nitrogen (N2) atmosphere. Simultaneously, supersaturated nitrogen (N) atoms, with a concentration above 1020 cm−3, are doped into the textured black Si layer via laser ablation. The N-doped Si exhibits strong below-bandgap infrared absorption from 1.1 to 2.5~\mu \textm , which remains nearly unchanged after annealing for 30 min at 873 K. The mechanism of this thermally stable infrared absorption is analyzed by first-principles calculations. According to the transmission electron microscopy results, multiple phases (including single crystalline, nanocrystalline, and amorphous phases) are observed in the laser-irradiated layer. Hall Effect measurements prove that N-dopants induce a low background free-carrier concentration ( \sim 1.67\times 10^16\,\,\text cm^-3 ). Finally, a Schottky-based bulk structure photodiode is made. This broadband photodiode exhibits good thermal stability and a photo-responsivity of 5.3 mA/W for 1.31~\mu \textm at a reverse bias of 10 V. [ABSTRACT FROM PUBLISHER]

External electric fields can be used to manipulate the electronic properties of two-dimensional (2D) materials. 2D InSe semiconductors possess high electron mobility and wide band gap tunability. Therefore, they have been proposed for use in ultrathin electronic devices. Here, using first-principles calculations, we study the charge polarization, structure, electronic structure, and gas adsorption of an InSe monolayer under vertical electric fields. We find that both the structural evolution and charge polarization rely on the directions of the electric fields. The hole effective mass at the valance band maximum can be decreased by fields that offer a possible route to increase mobility. In contrast, the fields have little impact on the effective mass of electrons at the conduction band minimum. Therefore, high electron mobility in InSe is retained under the fields. Besides, electric fields could alter the absorption intensity for gas molecules. Therefore, gas sensors could be an expected application. More importantly, this work systematically points out some key steps for setting up electric-field calculations in the popular VASP code, such as the cancellation of the symmetrisation of the charge density, avoiding electrons spilling out into the vacuum under high fields. [ABSTRACT FROM AUTHOR]

Ge–Sb–Te superlattice (GST-SL) is a newly emerging electronic material for nonvolatile phase-change memory with ultralow energy cost. However, its switching mechanism is still unclear with intensive debates. In this work, by first-principles calculations and an electron counting model study, we study the possible mechanism of phase change and the accompanying property transition of GST-SL. GST-SL are separated into individual layers by van der Waals gaps. We demonstrate that both the global chemical stoichiometry of the material and the local chemical stoichiometry of individual layer block are required to have an insulating band gap according to an electron counting model analysis. The electrical property can be adjusted by changing the local stoichiometry, such as producing defects around van der Waals gaps. Inspired by a previous experiment, we propose that a stacking-fault motion can spontaneously alter the band gap and results in a metal–insulator transition. This transition may provide a significant change of carrier concentration and indicate an ultralow energy-consumption process with a low energy barrier. The present investigations reveal a picture of electrical transition in GST-SL and may guide us to improve its device performances. [ABSTRACT FROM PUBLISHER]

Femtosecond lasers (fs) can cause a disparity between electronic and lattice temperatures in the very short period after irradiation. In this relatively cool lattice regime, the material properties can differ drastically from those under thermal equilibrium. In particular, first-principles calculations reveal two general mechanical effects on semiconductors. Firstly, the excitation can induce a negative pressure on the lattice, causing a ＞10% expansion, even for superhard diamond. Secondly, it induces inhomogeneous local forces on the atoms, for both perfect and distorted lattices. In the case of phase-change-memory for Ge2Sb2Te5 and GeTe alloys, such random forces cause a simultaneous phase transition from crystalline to amorphous, which enables faster data writing. These excitation effects are further supported by the time-dependent density functional theory. This work could be an important step in advancing fs laser techniques for the atomic-level control of structures, rather than relying on traditional melting or ablation approaches which often apply to much larger and non-atomic scales. [ABSTRACT FROM AUTHOR]

Organic single crystals have a great potential in the field of organic optoelectronics because of their advantages of high carrier mobility and high thermal stability. However, the application of the organic single crystals in light-emitting devices (OLEDs) has been limited by single-layered structure with unbalanced carrier injection and transport. Here, fabrication of a multilayered-structure crystal-based OLED constitutes a major step toward balanced carrier injection and transport by introducing an anodic buffer layer and electron transport layer into the device structure. Three primary color single-crystal-based OLEDs based on the multilayered structure and molecular doping exhibit a maximum luminance and current efficiency of 820 cd cm−2 and 0.9 cd A−1, respectively, which are the highest performance to date for organic single-crystal-based OLEDs. This work paves the way toward high-performance organic optoelectronic devices based on the organic single crystals. [ABSTRACT FROM AUTHOR]

The nano amorphous interface is important as it controls the phase transition for data storage. Yet, atomic scale insights into such kinds of systems are still rare. By first-principles calculations, we obtain the atomic interface between amorphous Si and amorphous Sb2Te3, which prevails in the series of Si–Sb–Te phase change materials. This interface model reproduces the experiment-consistent phenomena, i.e. the amorphous stability of Sb2Te3, which defines the data retention in phase change memory, and is greatly enhanced by the nano interface. More importantly, this method offers a direct platform to explore the intrinsic mechanism to understand the material function: (1) by steric effects through the atomic “channel” of the amorphous interface, the arrangement of the Te network is significantly distorted and is separated from the p-orbital bond angle in the conventional phase-change material; and (2) through the electronic “channel” of the amorphous interface, high localized electrons in the form of a lone pair are “projected” to Sb2Te3 from amorphous Si by a proximity effect. These factors set an effective barrier for crystallization and improve the amorphous stability, and thus data retention. The present research and scheme sheds new light on the engineering and manipulation of other key amorphous interfaces, such as Si3N4/Ge2Sb2Te5 and C/Sb2Te3, through first-principles calculations towards non-volatile phase change memory. [ABSTRACT FROM AUTHOR]

Buildup and switching mechanisms of solitons in complex nonlinear systems are fundamentally important dynamical regimes. Using a novel strongly nonlinear optical system, including saturable absorber metal‐organic framework (MOF)‐253@Au and a polarization controller (PC), the work reveals a new buildup scenario for “soliton molecules (SMs)”, which includes a long‐duration stage dominated by the emergence of transient noise‐like pulses (NLPs) modes to withstand strong disturbances arising from “turbulence” and extreme nonlinearity in the optical cavity. The switching between SMs and NLPs is controlled by the cavity polarization state. The switching involves the spectral collapse, following spectral oscillations with a variable period, and self‐organization of NLPs, following energy overshoot. This switching mechanism applies to various patterns with single, paired, and clustered pulses. In the multi‐pulses stage, XPM (cross‐phase‐modulation)‐induced interactions between solitons facilitate a specific mode of energy exchange between them, proportional to interaction duration, ensuring pulse stability during and after state transitions. Systematic simulations reveal the effects of the PC's rotation angle and intra‐cavity nonlinearity on the periodic phase transitions between the different soliton states and accurately reproduce the experimentally observed buildup and switching mechanisms. These findings can enhance the fundamental study and points to potential uses in designing information encoding systems. [ABSTRACT FROM AUTHOR]

Provides information on a study which prepared a bovine liver candidate reference material for micro-analytical techniques. Significance of standard reference materials (SRM); Details on the preparation process; Conclusion.

Soliton pulsations are ubiquitous feature of non‐stationary soliton dynamics in mode‐locked lasers and many other physical systems. To overcome difficulties related to a huge amount of necessary computations and low efficiency of traditional numerical methods in modeling the evolution of non‐stationary solitons, a two‐parallel bidirectional long short‐term memory recurrent neural network (TP‐Bi_LSTM RNN) is proposed, with the main objective to predict dynamics of vector‐soliton pulsations (VSPs) in various complex states, whose real‐time dynamics is verified by experiments. For two examples, viz., single‐ and bi‐periodic VSPs, with period‐21 and a combination of period‐3 and period‐43, the prediction results are better than provided by direct simulations – namely, deviations produced by the TP‐Bi_LSTM RNN results are 36% and 18% less than those provided by the simulations, respectively. This means that predicted results provided by the neural network are better than numerical simulations. Moreover, the prediction results for unstable VSP state with period‐9 indicate that the optimization of training sets and the number of training iterations are particularly important for the predictability. Besides, the scheme of coded information storage based on the TP‐Bi_LSTM RNN, instead of actual pulse signals, is realized too. The findings offer new applications of deep learning to ultrafast optics and information storage. [ABSTRACT FROM AUTHOR]

Organic single crystals with much higher carrier mobility and stability compared to the amorphous organic materials have shown great potential in electronic and optoelectronic devices. However, their applications in white organic light‐emitting devices (WOLEDs), especially the three‐color‐strategy WOLEDs, have been hindered by the difficulties in fabricating complicated device structures. Here, double‐doped white‐emission organic single crystals are used as the active layers for the first time in the three‐color‐strategy WOLEDs by co‐doping the red and green dopants into blue host crystals. Precise control of the dopant concentration in the double‐doped crystals results in moderately partial energy transfer from the blue donor to the green and red dopants, and thereafter, simultaneous RGB emissions with balanced emission intensity. The highest color‐rendering index (CRI) and efficiency, to the best of the authors' knowledge, are obtained for the crystal‐based WOLEDs. The CRI of the WOLEDs varies between 80 and 89 with the increase of the driving current, and the luminance and current efficiency reach up to 793 cd m−2 and 0.89 cd A−1, respectively. The demonstration of the present three‐color organic single‐crystal‐based WOLED promotes the development of the single crystals in optoelectronics. High‐color‐rendering and high‐efficiency three‐color‐strategy white organic light‐emitting devices (WOLEDs) are realized using double‐doped white‐emission organic single crystals, which are grown by co‐doping red and green dopants into the blue host. The crystal‐based WOLEDs exhibit the maximum luminance, current efficiency, and external quantum efficiency of 793 cd m−2, 0.89 cd A−1, and 0.48%, respectively, which promote the development of the organic single crystals in optoelectronics. [ABSTRACT FROM AUTHOR]

To meet the requirement of big data era and neuromorphic computations, nonvolatile memory with fast speed, high density, and low power consumption is urgently needed. As an emerging technology, phase‐change memory is a promising candidate to solve this problem. However, the drawback of the high power consumption hinders their applications. Most recently, a new phase‐change material of [(GeTe)x/(Sb2Te3)y]n superlattice attracts intensive attentions owing to its ultralow power consumption comparing with conventional phase‐change memory devices. Many studies on this new material have been reported. However, there still lacks a comprehensive and unified understanding of its atomic picture and working mechanism. This article at first summarizes the broad applications for phase‐change materials. Then, the major progresses of phase‐change superlattices to understand the microscopic structure and working principles for data storage are discussed. Strategies on material optimizations to further enhance device performances are proposed. Finally, an outlook on new applications with these advanced superlattice materials is suggested. The phase‐change superlattice is an advanced functional material that is suitable for nonvolatile memory with ultralow power consumption, high density, and fast speed. It is a promising candidate for the big data and artificial‐intelligence applications. The major progresses in the field are reviewed including its microscopic picture, working principles, and optimizations. Outlooks on its future development and applications are proposed. [ABSTRACT FROM AUTHOR]

Presents corrections to the paper, "Metal–insulator transition ofGe–Sb–Te superlattice: An electron counting model study," (Chen, N.-K.), IEEE Trans. Nanotechnol., vol. 17, no. 1, pp. 140–146, Jan. 2018. [ABSTRACT FROM AUTHOR]

Excitonic devices based on two-dimensional (2D) transition metal dichalcogenides (TMDCs) can combine spintronics with valleytronics due to its special energy band structure. In this work, we studied the generation and relaxation processes of spin/valley polarized excitons dynamics in monolayer WSe 2 and its van der Waals (vdW) heterojunction with graphene using a circularly polarized femtosecond pump-probe system. The spin/valley depolarization dynamics of the A exciton in monolayer WSe 2 is found to exhibit a biexponential decay. The fast relaxation process is due to the ultrafast intervalley electron-hole spin-flip exchange coupling and electron-phonon scattering. And the slow relaxation process originates from the recombination and relaxation of the trion states. Graphene has an electron extraction effect on WSe 2 , which prevents the formation of trions. Therefore, the spin/valley depolarization process of the A exciton in the heterojunction exhibits only a fast relaxation process. In both monolayer WSe 2 and its heterojunction with graphene, B/A' excitons exhibit a negative spin/valley polarization which is mainly due to two-photon absorption and excited Bose scattering. Our work systematically studied the spin/valley depolarization dynamics of excitons and revealed possible mechanisms of their differences in isolated 2D WSe 2 and vdW heterojunctions.

One central task of developing nonvolatile phase change memory (PCM) is to improve its scalability for high-density data integration. In this work, by first-principles molecular dynamics, to date the thinnest PCM material possible (0.8 nm), namely, a monolayer Sb 2 Te 3 , is proposed. Importantly, its SET (crystallization) process is a fast one-step transition from amorphous to hexagonal phase without the usual intermediate cubic phase. An increased spatial localization of electrons due to geometrical confinement is found to be beneficial for keeping the data nonvolatile in the amorphous phase at the 2D limit. The substrate and superstrate can be utilized to control the phase change behavior: e.g., with passivated SiO 2 (001) surfaces or hexagonal Boron Nitride, the monolayer Sb 2 Te 3 can reach SET recrystallization in 0.54 ns or even as fast as 0.12 ns, but with unpassivated SiO 2 (001), this would not be possible. Besides, working with small volume PCM materials is also a natural way to lower power consumption. Therefore, the proposed PCM working process at the 2D limit will be an important potential strategy of scaling the current PCM materials for ultrahigh-density data storage., Competing Interests: The authors declare no conflict of interest., (© 2021 The Authors. Advanced Science published by Wiley‐VCH GmbH.)

Due to the large photoluminescence quantum yield, high mobility and good stability, organic super acid treated two-dimensional WSe2 has drawn much attention. However, reports about the influence of organic super acid treatment on the dynamic processes of excitons of monolayer WSe2 are still rare. In this work, through the broadband transient absorption spectra obtained using a femtosecond pump-probe system, we determine the dynamics of A' and C excitons in monolayer and bulk WSe2 at room temperature. Besides this, we also observe the relaxation process of the holes between the two spin split states in the valence band maximum in organic super acid treated monolayer WSe2. We find that the organic super acid treatment on monolayer WSe2 does not change the peak positions of the exciton states, while those bleaching peaks' intensities increase significantly due to the enhancement of oscillator strength for exciton states, corresponding to stronger steady-state photoluminescence. This could be attributed to the strain release induced by the defect repairing effect during the organic super acid treatment process.