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Erratum to “Metal–Insulator Transition of Ge–Sb–Te Superlattice: An Electron Counting Model Study”.

Authors :
Chen, Nian-Ke
Li, Xian-Bin
Wang, Xue-Peng
Xie, Sheng-Yi
Tian, Wei Quan
Zhang, Shengbai
Sun, Hong-Bo
Source :
IEEE Transactions on Nanotechnology; May2018, Vol. 17 Issue 3, p614-614, 1p
Publication Year :
2018

Abstract

Presents corrections to the paper, "Metal–insulator transition ofGe–Sb–Te superlattice: An electron counting model study," (Chen, N.-K.), IEEE Trans. Nanotechnol., vol. 17, no. 1, pp. 140–146, Jan. 2018. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
1536125X
Volume :
17
Issue :
3
Database :
Complementary Index
Journal :
IEEE Transactions on Nanotechnology
Publication Type :
Academic Journal
Accession number :
132603736
Full Text :
https://doi.org/10.1109/TNANO.2018.2823098