284 results on '"Voelskow, M."'
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2. Diffusion and Interaction of In and As Implanted into SiO2 Films
3. Electron Paramagnetic Resonance in Ge/Si Heterostructures with Mn-Doped Quantum Dots
4. XAFS Spectroscopy Study of Microstructure and Electronic Structure of Heterosystems Containing Si/GeMn Quantum Dots
5. Specific features of the ion-beam synthesis of Ge nanocrystals in SiO2 thin films
6. Conductivity type and crystal orientation of GaAs nanocrystals fabricated in silicon by ion implantation and flash lamp annealing
7. Negative Magneto- and Electroresistance of Silicon Films with Superconducting Nanoprecipitates: The Role of Inelastic Cotunneling
8. Ion-beam synthesis of InSb nanocrystals in the buried SiO2 layer of a silicon-on-insulator structure
9. Crystallization induced by thermal annealing with millisecond pulses in silicon-on-insulator films implanted with high doses of hydrogen ions
10. Growth and electrical properties of the (Si/Ge)-on-insulator structures formed by ion implantation and subsequent hydrogen-assisted transfer
11. Behavior of germanium ion-implanted into SiO2 near the bonding interface of a silicon-on-insulator structure
12. Flash-lamp annealing of semiconductor materials—Applications and process models
13. Advanced Thermal Processing of Semiconductor Materials by Flash Lamp Annealing
14. Photoluminescence from cadmium sulfide nanoclusters formed in the matrix of a Langmuir-Blodgett film
15. Properties of Ge nanocrystals formed by implantation of Ge+ ions into SiO2 films with subsequent annealing under hydrostatic pressure
16. Modeling and regrowth mechanisms of flash lamp processing of SiC-on-silicon heterostructures
17. Ion implantation-induced damage depth profile determination in SiC by means of RBS/C and bevelling technique
18. Micro-Raman and ion channeling study of crystal damage in Si induced by focused Co ion beam implantation
19. Formation of photoluminescence centers during annealing of SiO2 layers implanted with Ge ions
20. Advanced thermal processing of semiconductor materials in the millisecond range
21. High-temperature high-dose implantation of N+ and Al+ ions in 6H-SiC
22. Strain and Band-Gap Engineering in Ge-Sn Alloys via P Doping
23. Controlled Nickel Silicidation of Silicon Nanowires for Fabrication of Reconfigurable Field Effect Transistors
24. Ex situ n+ doping of GeSn alloys via non-equilibrium processing
25. Annealing studies of Al-implanted 6H-SiC in an induction furnace
26. High-fluence Ga-implanted silicon—The effect of annealing and cover layers.
27. The beneficial role of flash lamp annealing on the epitaxial growth of the 3C–SiC on Si
28. Investigation of Al-implanted 6H– and 4H–SiC layers after fast heating rate annealings
29. Towards Reconfigurable Field Effect Transistors: Controlled Nickel Silicidation using Flash Lamp Annealing
30. Ex-situ doping and Ohmic contact formation with low contact resistance on MBE grown GeSn on Si
31. The effect of rare-earth clustering on charge trapping and electroluminescence in rare-earth implanted metal-oxide-semiconductor light-emitting devices.
32. Heavily Ga-doped germanium layers produced by ion implantation and flash lamp annealing: Structure and electrical activation.
33. Controlling blue-violet electroluminescence of Ge-rich Er-doped SiO2 layers by millisecond annealing using flash lamps.
34. Anomalous wear-out phenomena of europium-implanted light emitters based on a metal-oxide-semiconductor structure.
35. The role of Ge-related oxygen-deficiency centers in controlling the blue-violet photo- and electroluminescence in Ge-rich SiO2 via Er doping.
36. Epitaxial 3C-SiC nanocrystal formation at the SiO2/Si interface by combined carbon implantation and annealing in CO atmosphere.
37. Influence of annealing on the Er luminescence in Si-rich SiO2 layers coimplanted with Er ions.
38. Process control and melt depth homogenization for SiC-on-Si structures during flash lamp annealing by carbon implantation.
39. Analysis of wafer stresses during millisecond thermal processing.
40. Layer morphology and Al implant profiles after annealing of supersaturated, single-crystalline, amorphous, and nanocrystalline SiC.
41. Crystallization and surface erosion of SiC by ion irradiation at 500°C
42. Characterisation of defects in ion implanted SiC by slow positron implantation spectroscopy and Rutherford backscattering
43. Comparison of the room temperature 1.53-[mu]m Er photoluminescence from flash lamp and furnace annealed Er-doped Ge-rich Si[O.sub.2] layers
44. Controlling blue-violet electroluminescence of Ge-rich Er-doped Si[O.sub.2] layers by millisecond annealing using flash lamps
45. Optoelectronic properties of ultra-doped Ge fabricated by ion implantation and flash lamp annealing
46. Mid-infrared plasmonic absorption from heavily doped Ge thin films
47. The role of Ge-related oxygen-deficiency centers in controlling the blue-violet photo- and electroluminescence in Ge-rich Si[O.sub.2] via Er doping
48. Defect-engineering blue-violet electroluminescence from Ge nanocrystal rich Si[O.sub.2] layers by Er doping
49. Epitaxial 3C-SiC nanocrystal formation at the Si[O.sub.2]/Si interface by combined carbon implantation and annealing in CO atmosphere
50. Influence of annealing on the Er luminescence in Si-rich Si[O.sub.2] layers coimplanted with Er ions
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