9 results on '"Vaissière, Nicolas"'
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2. Multiscale Compact Modelling of UTC-Photodiodes Enabling Monolithic Terahertz Communication Systems Design
- Author
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Guendouz, Djeber, Mukherjee, Chhandak, Deng, Marina, De Matos, Magali, Caillaud, Christophe, Bertin, Hervé, Bobin, Antoine, Vaissière, Nicolas, Mekhazni, Karim, Mallecot, Franck, Arabhavi, Akshay M., Chaudhary, Rimjhim, Ostinelli, Olivier, Bolognesi, Colombo, Mounaix, Patrick, Maneux, Cristell, Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1 (UB)-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Eidgenössische Technische Hochschule - Swiss Federal Institute of Technology [Zürich] (ETH Zürich), III-V lab, a joint lab between NBLF, TRT and CEA-Leti, Millimeter-Wave Electronics Laboratory [ETH Zürich] (MWE), Department of Information Technology and Electrical Engineering [Zürich] (D-ITET), and Eidgenössische Technische Hochschule - Swiss Federal Institute of Technology [Zürich] (ETH Zürich)- Eidgenössische Technische Hochschule - Swiss Federal Institute of Technology [Zürich] (ETH Zürich)
- Subjects
SPICE ,bandwidth ,Technology ,QH301-705.5 ,Physics ,QC1-999 ,Engineering (General). Civil engineering (General) ,uni-traveling carrier photodiodes ,compact model ,terahertz ,de-embedding ,on-wafer characterization ,Chemistry ,[SPI]Engineering Sciences [physics] ,uni-traveling carrier photodiode ,[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic ,TA1-2040 ,Biology (General) ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,QD1-999 ,deembedding - Abstract
Due to the continuous increase in data traffic, it is becoming imperative to develop communication systems capable of meeting the throughput requirements. Monolithic Opto-Electronic Integrated Circuits (OEICs) are ideal candidates to meet these demands. With that in mind, we propose a compact and computationally efficient model for Uni-Traveling Carrier Photodiodes (UTC-PDs) which are a key component of OEICs because of their high bandwidth and RF output power. The developed compact model is compatible with existing SPICE design software, enabling the design of beyond 5G and terahertz (THz) communication circuits and systems. By introducing detailed physical equations describing, in particular, the dark current, the intrinsic series resistance, and the junction capacitance, the model accurately captures the physical characteristics of the UTC-PD. The model parameter extraction follows a scalable extraction methodology derived from that of the bipolar and CMOS technologies. A detailed description of the de-embedding process is presented. Excellent agreement between the compact model and measurements has been achieved, showing model versatility across various technologies and scalability over several geometries., Applied Sciences, 11 (23), ISSN:2076-3417
- Published
- 2021
3. Low-Threshold, High-Power On-Chip Tunable III-V/Si Lasers with Integrated Semiconductor Optical Amplifiers.
- Author
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Ramírez, Joan Manel, Fanneau de la Horie, Pierre, Provost, Jean-Guy, Malhouitre, Stéphane, Néel, Delphine, Jany, Christophe, Besancon, Claire, Vaissière, Nicolas, Decobert, Jean, Hassan, Karim, and Bitauld, David
- Abstract
Featured Application: Compact on-chip widely tunable lasers and semiconductor optical amplifiers on heterogeneously integrated III-V/SOI platforms for optical communications. Heterogeneously integrated III-V/Si lasers and semiconductor optical amplifiers (SOAs) are key devices for integrated photonics applications requiring miniaturized on-chip light sources, such as in optical communications, sensing, or spectroscopy. In this work, we present a widely tunable laser co-integrated with a semiconductor optical amplifier in a heterogeneous platform that combines AlGaInAs multiple quantum wells (MQWs) and InP-based materials with silicon-on-insulator (SOI) wafers containing photonic integrated circuits. The co-integrated device is compact, has a total device footprint of 0.5 mm
2 , a lasing current threshold of 10 mA, a selectable wavelength tuning range of 50 nm centered at λ = 1549 nm, a fiber-coupled output power of 10 mW, and a laser linewidth of ν = 259 KHz. The SOA provides an on-chip gain of 18 dB/mm. The total power consumption of the co-integrated devices remains below 0.5 W even for the most power demanding lasing wavelengths. Apart from the above-mentioned applications, the co-integration of compact widely tunable III-V/Si lasers with on-chip SOAs provides a step forward towards the development of highly efficient, portable, and low power systems for wavelength division multiplexed passive optical networks (WDM-PONs). [ABSTRACT FROM AUTHOR]- Published
- 2021
- Full Text
- View/download PDF
4. Low temperature plasma epitaxy of Silicon on III-V
- Author
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Hamon, Gwenaëlle, Vaissière, Nicolas, Chen, Wanghua, Alvarez, J, Maurice, Jean-Luc, Decobert, Jean, Kleider, Jean-Paul, Roca i Cabarrocas, Pere Roca i Cabarrocas, Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, THALES [France]-ALCATEL, and KLEIDER, Jean-Paul
- Subjects
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic ,[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.NRJ]Engineering Sciences [physics]/Electric power ,[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic ,[SPI.MAT] Engineering Sciences [physics]/Materials ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,ComputingMilieux_MISCELLANEOUS ,[SPI.NRJ] Engineering Sciences [physics]/Electric power ,[SPI.MAT]Engineering Sciences [physics]/Materials - Abstract
International audience
- Published
- 2018
5. Heteroepitaxial growth of Silicon on GaAs via low temperature plasma-enhanced chemical vapor deposition
- Author
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Hamon, Guénaëlle, Vaissière, Nicolas, Cariou, Romain, Chen, Wanghua, Alvarez, J, Maurice, Jean-Luc, Decobert, Jean, Kleider, Jean-Paul, Roca i Cabarrocas, Pere Roca i Cabarrocas, KLEIDER, Jean-Paul, Production Renouvelable et Gestion de l'Electricité - Multi-jonctions innovantes combinant MOVPE et épitaxie à basse température pour le solaire - - IMPETUS2013 - ANR-13-PRGE-0009 - PROGELEC - VALID, Total S.A. Renewables, Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thales III-V Lab (III-V Lab), THALES, Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-CentraleSupélec-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, and ANR-13-PRGE-0009,IMPETUS,Multi-jonctions innovantes combinant MOVPE et épitaxie à basse température pour le solaire(2013)
- Subjects
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic ,[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.NRJ]Engineering Sciences [physics]/Electric power ,[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.MAT] Engineering Sciences [physics]/Materials ,ComputingMilieux_MISCELLANEOUS ,[PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,[SPI.MAT]Engineering Sciences [physics]/Materials ,[SPI.NRJ] Engineering Sciences [physics]/Electric power - Abstract
National audience
- Published
- 2018
6. Modelling of multijunction cells
- Author
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Lachaume, Raphaël, Foldyna, Martin, Hamon, Gwenaëlle, Vaissière, Nicolas, Cariou, Romain, Decobert, Jean, Roca I Cabarrocas, Pere, Alvarez, J, Kleider, Jean-Paul, Institut Photovoltaïque d’Ile-de-France (ITE) (IPVF), Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Total New Energies, Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, Lachaume, Raphaël, and THALES-ALCATEL
- Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.MAT] Engineering Sciences [physics]/Materials ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.TRON] Engineering Sciences [physics]/Electronics ,ComputingMilieux_MISCELLANEOUS ,[SPI.MAT]Engineering Sciences [physics]/Materials ,[SPI.TRON]Engineering Sciences [physics]/Electronics - Abstract
International audience
- Published
- 2016
7. Trapping of nickel and cobalt in CaNiSi 2O 6 and CaCoSi 2O 6 diopside-like phases in heat-treated cement
- Author
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Masse, Sylvie, Boch, Philippe, and Vaissière, Nicolas
- Published
- 1999
- Full Text
- View/download PDF
8. Si1-xGex alloys on III-V (100): first steps in film growth by low temperature PECVD epitaxy
- Author
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Vaissière, Nicolas, Hamon, Gwenaëlle, Lachaume, Raphaël, Chen, Wanghua, Decobert, Jean, Alvarez, J, Kleider, Jean-Paul, Roca I Cabarrocas, Pere, Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, ANR-13-PRGE-0009,IMPETUS,Multi-jonctions innovantes combinant MOVPE et épitaxie à basse température pour le solaire(2013), THALES [France]-ALCATEL, Lachaume, Raphaël, and Production Renouvelable et Gestion de l'Electricité - Multi-jonctions innovantes combinant MOVPE et épitaxie à basse température pour le solaire - - IMPETUS2013 - ANR-13-PRGE-0009 - PROGELEC - VALID
- Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.MAT] Engineering Sciences [physics]/Materials ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.TRON] Engineering Sciences [physics]/Electronics ,ComputingMilieux_MISCELLANEOUS ,[SPI.MAT]Engineering Sciences [physics]/Materials ,[SPI.TRON]Engineering Sciences [physics]/Electronics - Abstract
National audience
- Published
- 2016
9. Novel technology of III-V die-bonded SOI photonic integrated circuits.
- Author
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Néel, Delphine, Shen, Alexandre, Fanneau de La Horie, Pierre, Vaissière, Nicolas, Wilk, Arnaud, Muffato, Viviane, Malhouitre, Stéphane, Ramez, Valentin, Desières, Yohan, and Hassan, Karim
- Published
- 2021
- Full Text
- View/download PDF
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