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Your search keyword '"Souliman El Moussaoui"' showing total 2 results
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2 results on '"Souliman El Moussaoui"'

1. Large-Area and High-Quality Epitaxial Graphene on Off-Axis SiC Wafers

Author

M. Eddrief, Rachid Belkhou, Mathieu G. Silly, Fausto Sirotti, Claire Mathieu, Abdelkarim Ouerghi, Matthieu Picher, Souliman El Moussaoui, Massimiliano Marangolo, Institut des Nanosciences de Paris (INSP), Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS), ANR, and RTRA Triangle de la Physique

Subjects
spectroscopy, Materials science, General Physics and Astronomy, Nanotechnology, 02 engineering and technology, 010402 general chemistry, 01 natural sciences, law.invention, law, General Materials Science, Wafer, Electronics, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Graphene oxide paper, vicinal SiC, Graphene, General Engineering, low-energy electron microscopy, 021001 nanoscience & nanotechnology, epitaxial graphene, 0104 chemical sciences, Low-energy electron microscopy, electronic properties, scanning tunneling microscopy, Sublimation (phase transition), Scanning tunneling microscope, 0210 nano-technology, Graphene nanoribbons
Abstract

International audience; The growth of large and uniform graphene layers remains very challenging to this day due to the close correlation between the electronic and transport properties and the layer morphology. Here, we report the synthesis of uniform large-scale mono- and bilayers of graphene on off-axis 6H-SiC(0001) substrates. The originality of our approach consists of the fine control of the growth mode of the graphene by precise control of the Si sublimation rate. Moreover, we take advantage of the presence of nanofacets on the off-axis substrate to grow a large and uniform graphene with good long-range order. We believe that our approach represents a significant step toward the scalable synthesis of graphene films with high structural qualities and fine thickness control, in order to develop graphene-based electronic devices.

Published
2012
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2. Magnetic layer thickness dependence of all-optical magnetization switching in GdFeCo thin films.

Author

Hiroki Yoshikawa, Souliman El Moussaoui, Shinnosuke Terashita, Ryohei Ueda, and Arata Tsukamoto

Abstract

To clarify the relationship between all-optical magnetization switching (AOS) and nonlocal and nonadiabatic energy dissipation process, we focus on the contribution from energy dissipation in the depth direction. Differently designed structure dependence of created magnetic domain is observed from the reversal phenomenon, AOS, or multidomains by thermomagnetic nucleation (TMN) in GdFeCo multilayer thin films. TMN depends on the shared absorbed energy throughout the continuous metallic volume. On the other hand, AOS critically depends on nonadiabatic energy dissipation process with the electron system in sub-picoseconds. Furthermore, the laser fluence dependence of AOS-created domain sizes indicates that the value of irradiated laser fluence threshold per magnetic domain volume is almost constant. However, a lower laser irradiation fluence below 1–2 mW has a larger value and thickness dependence. From these results, we suggest that AOS depends on energy dissipation from the incident surface in the depth direction for a few picoseconds. [ABSTRACT FROM AUTHOR]

Published
2016
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