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Using infrared absorption, the room temperature band gap of InSb is found to reduce from 174 (7.1 μm) to 85 meV (14.6 μm) upon incorporation of up to 1.13% N, a reduction of ∼79 meV/%N. The experimentally observed band gap reduction in molecular-beam epitaxial InNSb thin films is reproduced by a five band k · P band anticrossing model incorporating a nitrogen level, EN, 0.75 eV above the valence band maximum of the host InSb and an interaction coupling matrix element between the host conduction band and the N level of β = 1.80 eV. This observation is consistent with the presented results from hybrid density functional theory. [ABSTRACT FROM AUTHOR]

Electron–hole separation for novel composite systems comprised of secondary building units formed from different compounds is investigated with the aim of finding suitable materials for photocatalysis. Pure and mixed SOD and LTA superlattices of (ZnO)12 and (GaN)12, single-shell bubbles are constructed as well as core@shell single component frameworks composed of larger (ZnO)48 and (GaN)48 bubbles with each containing one smaller bubble. Enthalpies of formation for all systems are comparable with fullerenes. Hole and electron separation is achieved most efficiently by the edge sharing framework composed of (GaN)12@(ZnO)48 double bubbles, with the hole localised on the nitrogen within the smaller bubbles and the excited electron on zinc within the larger cages. [ABSTRACT FROM AUTHOR]

Since the original discovery of the water-splitting activity of silver orthophosphate (Ag[sub 3]PO[sub 4]), considerable effort has been devoted to improving its photocatalytic activity and stability through morphology control and the design of multi-component electrode systems. Relatively little attention, however, has been paid to understanding the fundamental electronic properties of this material. Using X-ray photoelectron spectroscopy and hybrid density functional theory (DFT) calculations, we have studied the electronic structure of Ag[sub 3]PO[sub 4]. Our results indicate that hybrid DFT calculations closely reproduce the structural, electronic, and optical properties of Ag[sub 3]PO[sub 4]. From further analysis of the experimental and theoretical electronic structure data we have constructed a revised molecular orbital diagram for Ag[sub 3]PO[sub 4] that highlights the strong covalent interactions formed in the tetrahedral PO[sub 4] structural units. [ABSTRACT FROM AUTHOR]

We present results of electronic structure calculations on the N-related localized vibrational modes in the dilute nitride alloy GaSb1-xNx . By calculating the formation energies of various possible N incorporation modes in the alloy, we determine the most favorable N configurations, and we calculate their vibrational mode frequencies using density functional theory under the generalized gradient approximation to electron exchange and correlation, including the effects of the relativistic spin-orbit interactions. For a single N impurity, we find substitution on an Sb site, NSb, to be most favorable, and for a two-N-atom complex, we find the N-N split interstitial on an Sb site to be most favorable. For these defects, as well as, for comparison, defects comprising two N atoms on neighboring Sb sites and a N-Sb split interstitial on an Sb site, we find well-localized vibration modes (LVMs), which should be experimentally observable. The frequency of the triply degenerate LVM associated with NSb is determined to be 427.6 cm-1. Our results serve as a guide to future experimental studies to elucidate the incorporation of small concentrations of N in GaSb, which is known to lead to a reduction of the band gap and opens the possibility of using the material for long-wavelength applications. [ABSTRACT FROM AUTHOR]

Molecular-beam epitaxy has been used to grow GaSb1-xBix alloys with x up to 0.05. The Bi content, lattice expansion, and film thickness were determined by Rutherford backscattering and x-ray diffraction, which also indicate high crystallinity and that >98% of the Bi atoms are substitutional. The observed Bi-induced lattice dilation is consistent with density functional theory calculations. Optical absorption measurements and valence band anticrossing modeling indicate that the room temperature band gap varies from 720 meV for GaSb to 540 meV for GaSb0.95Bi0.05, corresponding to a reduction of 36 meV/%Bi or 210 meV per 0.01 Å change in lattice constant. [ABSTRACT FROM AUTHOR]

We present results of density functional theory calculations on the phonon dispersion and elastic constants of bulk ceria (CeO2) as a function of positive and negative isotropic strain, which could be induced thermally or by cationic doping. We find that, as the lattice is expanded, there is a significant softening of the B1u mode at the X point. This mode consists of motions of oxygens in the [001] direction. At a strain of 1.6%, corresponding to a temperature of 1600 K, the B1u and Eu modes at the X point cross, with an associated high, narrow peak in the phonon density of states appearing. We infer that this crossing indicates a coupling of the modes, leading to a transition to a superionic phase, where conductivity occurs in the [001] direction, mediated by anion interstitial site occupation. As the lattice is expanded further, the B1u mode continues to soften, becoming imaginary at a strain of 3.4%, corresponding to a temperature of 2500 K. Following the imaginary mode would result in a cubic to tetragonal phase transition, similar to those known to occur with reducing temperature in zirconia (ZrO2) and hafnia (HfO2). Our calculated elastic constants, however, indicate that the structure remains mechanically stable, even at this level of expansion. As confirmed by our semiclassical free energy calculations, the cubic phase of ceria remains the most stable, while the imaginary mode indicates a change to a thermally disordered cubic phase, with the majority of disorder occurring on the anion sublattice. Our results explain the high temperature ionic conductivity in ceria and other fluorite-structured materials in terms of the intrinsic lattice dynamics, and give insight to the stability and anionic disorder at elevated temperatures. [ABSTRACT FROM AUTHOR]

Methyl-ammonium lead iodide is the archetypal perovskite solar cell material. Phase pure, compositionally uniform methyl-ammonium lead iodide thin films on large glass substrates were deposited using ambient pressure aerosol assisted chemical vapour deposition. This opens up a route to efficient scale up of hybrid perovskite film growth towards industrial deployment. [ABSTRACT FROM AUTHOR]

We have directly measured the band gap renormalization associated with the Moss-Burstein shift in the perovskite transparent conducting oxide (TCO), La-doped BaSnO3, using hard x-ray photoelectron spectroscopy. We determine that the band gap renormalization is almost entirely associated with the evolution of the conduction band. Our experimental results are supported by hybrid density functional theory supercell calculations. We determine that unlike conventional TCOs where interactions with the dopant orbitals are important, the band gap renormalization in La-BaSnO3 is driven purely by electrostatic interactions. [ABSTRACT FROM AUTHOR]

We report direct evidence of conduction band filling in 3% La-doped BaSnO3 using hard x-ray photoelectron spectroscopy. Direct comparisons with hybrid density functional theory calculations support a 3.2 eV indirect band gap. The use of hybrid DFT is verified by excellent agreement between our photoelectron spectra and O K-edge x-ray emission and absorption spectra. Our experimental and computational results demonstrate that the conduction band is primarily of Sn 5s orbital character with little O 2p contribution, which is a prerequisite for designing a perovskite-based transparent conducting oxide. [ABSTRACT FROM AUTHOR]

We examine ZnSnN2, a member of the class of materials contemporarily termed 'earth-abundant element semiconductors,' with an emphasis on evaluating its suitability for photovoltaic applications. It is predicted to crystallize in an orthorhombic lattice with an energy gap of 2 eV. Instead, using molecular beam epitaxy to deposit high-purity, single crystal as well as highly textured polycrystalline thin films, only a monoclinic structure is observed experimentally. Far from being detrimental, we demonstrate that the cation sublattice disorder which inhibits the orthorhombic lattice has a profound effect on the energy gap, obviating the need for alloying to match the solar spectrum. [ABSTRACT FROM AUTHOR]

A response from the authors of the article "Determination of the Nitrogen Vacancy as a Shallow Compensating Center in GaN Doped with Divalent Metals" in the 2015 issue is presented.

We report an experimental and computational study of the magnetic and electronic properties of the layered Ru(V) oxide SrRu2O6 (hexagonal, P31m), which shows antiferromagnetic order with a Néel temperature of 563(2) K, among the highest for 4d oxides. Magnetic order occurs both within edge-shared octahedral sheets and between layers and is accompanied by anisotropic thermal expansivity that implies strong magnetoelastic coupling of Ru(V) centers. Electrical transport measurements using focused-ion-beam-induced deposited contacts on a micron-scale crystallite as a function of temperature show p-type semiconductivity. The calculated electronic structure using hybrid density functional theory successfully accounts for the experimentally observed magnetic and electronic structure, and Monte Carlo simulations reveal how strong intralayer as well as weaker interlayer interactions are a defining feature of the high-temperature magnetic order in the material. [ABSTRACT FROM AUTHOR]

The surface band bending and electronic properties of SnO2(101) films grown on r-sapphire by plasma-assisted molecular beam epitaxy have been studied by Fourier-transform infrared spectroscopy (FTIR), x-ray photoemission spectroscopy (XPS), Hall effect, and electrochemical capacitance-voltage measurements. The XPS results were correlated with density functional theory calculation of the partial density of states in the valence-band and semicore levels. Good agreement was found between theory and experiment with a small offset of the Sn 4d levels. Homogeneous Sb-doped SnO2 films allowed for the calculation of the bulk Fermi level with respect to the conduction-band minimum within the k . p carrier statistics model. The band bending and carrier concentration as a function of depth were obtained from the capacitance-voltage characteristics and model space charge calculations of the Mott-Schottky plots at the surface of Sb-doped SnO2 films. It was quantitatively demonstrated that SnO2 films have downward band bending and surface electron accumulation. The surface band bending, unoccupied donor surface-state density, and width of the accumulation region all decrease with increasing Sb concentration. [ABSTRACT FROM AUTHOR]

The electronic structure of IrO2 has been investigated using hard x-ray photoelectron spectroscopy and density-functional theory. Excellent agreement is observed between theory and experiment. We show that the electronic structure of IrO2 involves crystal field splitting of the iridium 5d orbitals in a distorted octahedral field. The behavior of IrO2 closely follows the dieoretical predictions of Goodenough for conductive rutile-structured oxides [J. B. Goodenough, J. Solid State Chem. 3, 490 (1971)]. Strong satellites associated with the core lines are ascribed to final state screening effects. A simple plasmon model for the satellites applicable to many other metallic oxides appears to be not valid for IrO2. [ABSTRACT FROM AUTHOR]

Tensile strain along the cR axis in epitaxial VO2 films raises the temperature of the metal insulator transition and is expected to stabilize the intermediate monoclinic M2 phase. We employ surface-sensitive x-ray spectroscopy to distinguish from the TiO2 substrate and identify the phases of VO2 as a function of temperature in epitaxial VO2/TiO2 thin films with well-defined biaxial strain. Although qualitatively similar to our Landau-Ginzburg theory predicted phase diagrams, the M2 phase is stabilized by nearly an order of magnitude more strain than expected for the measured temperature window. Our results reveal that the elongation of the cR axis is insufficient for describing the transition pathway of VO2 epitaxial films and that a strain induced increase of electron correlation effects must be considered. [ABSTRACT FROM AUTHOR]

A new reduced phase derived from the excitonic insulator candidate Ta 2 NiSe 5 has been synthesized via the intercalation of lithium. LiTa 2 NiSe 5 crystallizes in the orthorhombic space group Pmnb (no. 62) with lattice parameters a = 3.50247(3) Å, b = 13.4053(4) Å, c = 15.7396(2) Å, and Z = 4, with an increase of the unit cell volume by 5.44(1)% compared with Ta 2 NiSe 5 . Significant rearrangement of the Ta-Ni-Se layers is observed, in particular a very significant relative displacement of the layers compared to the parent phase, similar to that which occurs under hydrostatic pressure. Neutron powder diffraction experiments and computational analysis confirm that Li occupies a distorted triangular prismatic site formed by Se atoms of adjacent Ta 2 NiSe 5 layers with an average Li-Se bond length of 2.724(2) Å. Li-NMR experiments show a single Li environment at ambient temperature. Intercalation suppresses the distortion to monoclinic symmetry that occurs in Ta 2 NiSe 5 at 328 K and that is believed to be driven by the formation of an excitonic insulating state. Magnetometry data show that the reduced phase has a smaller net diamagnetic susceptibility than Ta 2 NiSe 5 due to the enhancement of the temperature-independent Pauli paramagnetism caused by the increased density of states at the Fermi level evident also from the calculations, consistent with the injection of electrons during intercalation and formation of a metallic phase.

Ternary lanthanide indium oxides LnInO 3 (Ln = La, Pr, Nd, Sm) were synthesized by high-temperature solid-state reaction and characterized by X-ray powder diffraction. Rietveld refinement of the powder patterns showed the LnInO 3 materials to be orthorhombic perovskites belonging to the space group Pnma , based on almost-regular InO 6 octahedra and highly distorted LnO 12 polyhedra. Experimental structural data were compared with results from density functional theory (DFT) calculations employing a hybrid Hamiltonian. Valence region X-ray photoelectron and K-shell X-ray emission and absorption spectra of the LnInO 3 compounds were simulated with the aid of the DFT calculations. Photoionization of lanthanide 4f orbitals gives rise to a complex final-state multiplet structure in the valence region for the 4f n compounds PrInO 3 , NdInO 3 , and SmInO 3 , and the overall photoemission spectral profiles were shown to be a superposition of final-state 4f n -1 terms onto the cross-section weighted partial densities of states from the other orbitals. The occupied 4f states are stabilized in moving across the series Pr-Nd-Sm. Band gaps were measured using diffuse reflectance spectroscopy. These results demonstrated that the band gap of LaInO 3 is 4.32 eV, in agreement with DFT calculations. This is significantly larger than a band gap of 2.2 eV first proposed in 1967 and based on the idea that In 4d states lie above the top of the O 2p valence band. However, both DFT and X-ray spectroscopy show that In 4d is a shallow core level located well below the bottom of the valence band. Band gaps greater than 4 eV were observed for NdInO 3 and SmInO 3 , but a lower gap of 3.6 eV for PrInO 3 was shown to arise from the occupied Pr 4f states lying above the main O 2p valence band., Competing Interests: The authors declare no competing financial interest., (© 2021 The Authors. Published by American Chemical Society.)

We report accurate energetics of defects introduced in GaN on doping with divalent metals, focusing on the technologically important case of Mg doping, using a model that takes into consideration both the effect of hole localization and dipolar polarization of the host material, and includes a well-defined reference level. Defect formation and ionization energies show that divalent dopants are counterbalanced in GaN by nitrogen vacancies and not by holes, which explains both the difficulty in achieving p-type conductivity in GaN and the associated major spectroscopic features, including the ubiquitous 3.46 eV photoluminescence line, a characteristic of all lightly divalent-metal-doped GaN materials that has also been shown to occur in pure GaN samples. Our results give a comprehensive explanation for the observed behavior of GaN doped with low concentrations of divalent metals in good agreement with relevant experiment.

The electronic structure of single-crystal WO3 and Na0.67WO3 (a sodium-tungsten bronze) has been measured using soft x-ray absorption and resonant soft x-ray emission oxygen K-edge spectroscopies. The spectral features show clear differences in energy and intensity between WO3 and Na0.67WO3. The x-ray emission spectrum of metallic Na0.67WO3 terminates in a distinct Fermi edge. The rigid-band model fails to explain the electronic structure of Na0.67WO3 in terms of a simple addition of electrons to the conduction band of WO3. Instead, Na bonding and Na 3s-O 2p hybridization need to be considered for the sodium-tungsten bronze, along with occupation of the bottom of the conduction band. Furthermore, the anisotropy in the band structure of monoclinic γ-WO3 revealed by the experimental spectra with orbital-resolved geometry is explained via density functional theory calculations. For γ-WO3 itself, good agreement is found between the experimental O K-edge spectra and the theoretical partial density of states of O 2p orbitals. Indirect and direct bandgaps of insulating WO3 are determined from extrapolating separations between spectral leading edges and accounting for the core-hole energy shift in the absorption process. The O 2p non-bonding states show upward band dispersion as a function of incident photon energy for both compounds, which is explained using the calculated band structure and experimental geometry.