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Buckeridge et al. Reply:.

Authors :
Buckeridge, J.
Catlow, C. R. A.
Scanlon, D. O.
Keal, T. W.
Sherwood, P.
Miskufova, M.
Walsh, A.
Woodley, S. M.
Sokol, A. A.
Source :
Physical Review Letters. 7/10/2015, Vol. 115 Issue 2, p029702-1-029702-2. 2p.
Publication Year :
2015

Abstract

A response from the authors of the article "Determination of the Nitrogen Vacancy as a Shallow Compensating Center in GaN Doped with Divalent Metals" in the 2015 issue is presented.

Subjects

Subjects :
*NITROGEN
*GALLIUM nitride
*SEMICONDUCTOR doping

Details

Language :
English
ISSN :
00319007
Volume :
115
Issue :
2
Database :
Academic Search Index
Journal :
Physical Review Letters
Publication Type :
Academic Journal
Accession number :
108586069
Full Text :
https://doi.org/10.1103/PhysRevLett.115.029702
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