8 results on '"Sangmoo Choi"'
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2. Improved metal-oxide-nitride-oxide-silicon-type flash device with high-k dielectrics for blocking layer
3. High density silicon nanocrystal embedded in sin prepared by low energy (<500eV) SiH/sub 4/ plasma immersion ion implantation for non-volatile memory applications.
4. Atomic-layer deposited IrO2nanodots for charge-trap flash-memory devices.
5. High Work-Function Metal Gate and High-κ Dielectrics for Charge Trap Flash Memory Device Applications.
6. Impact of Metal Work Function on Memory Properties of Charge-Trap Flash Memory Devices Using Fowler—Nordheim PIE Mode.
7. Multi-layered Vertical Gate NAND Flash overcoming stacking limit for terabit density storage.
8. The impact of work-function of metal gate and fixed oxide charge of high-k blocking dielectric on memory properties of NAND type charge trap flash memory devices.
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