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High Work-Function Metal Gate and High-κ Dielectrics for Charge Trap Flash Memory Device Applications.
- Source :
- IEEE Transactions on Electron Devices; Dec2005, Vol. 52 Issue 12, p2654-2659, 6p
- Publication Year :
- 2005
-
Abstract
- We report the impact of high work-function (Φ<subscript>M</subscript>) metal gate and high-κ dielectrics on memory properties of NAND- type charge trap Flash (CTF) memory devices. In this paper, theoretical and experimental studies show that high Φ<subscript>M</subscript> gate and high permittivity (high-κ) dielectrics play a key role in eliminating electron back tunneling though the blocking dielectric during the erase operation. Techniques to improve erase efficiency of CTF memory devices with a fixed metal gate by employing various chemicals and structures are introduced and those mechanisms are discussed. Though process optimization of high Φ<subscript>M</subscript> gate and high-κ materials, enhanced CTF device characteristics such as high speed, large memory window, and good reliability characteristics of the CTF devices are obtained. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 52
- Issue :
- 12
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 19239504
- Full Text :
- https://doi.org/10.1109/TED.2005.859691