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Nanocrystal superlattices (NC SLs) have long been sought as promising metamaterials, with nanoscale-engineered properties arising from collective and synergistic effects among the constituent building blocks. Lead halide perovskite (LHP) NCs come across as outstanding candidates for SL design, as they demonstrate collective light emission, known as superfluorescence, in single- and multicomponent SLs. Thus far, LHP NCs have only been assembled in single-component SLs or coassembled with dielectric NC building blocks acting solely as spacers between luminescent NCs. Here, we report the formation of multicomponent LHP NC-only SLs, i.e., using only CsPbBr 3 NCs of different sizes as building blocks. The structural diversity of the obtained SLs encompasses the ABO 6 , ABO 3 , and NaCl structure types, all of which contain orientationally and positionally locked NCs. For the selected model system, the ABO 6 -type SL, we observed efficient NC coupling and Förster-like energy transfer from strongly confined 5.3 nm CsPbBr 3 NCs to weakly confined 17.6 nm CsPbBr 3 NCs, along with characteristic superfluorescence features at cryogenic temperatures. Spatiotemporal exciton dynamics measurements reveal that binary SLs exhibit enhanced exciton diffusivity compared to single-component NC assemblies across the entire temperature range (from 5 to 298 K). The observed coherent and incoherent NC coupling and controllable excitonic transport within the solid NC SLs hold promise for applications in quantum optoelectronic devices.

Material surfaces encompass structural and chemical discontinuities that often lead to the loss of the property of interest in so-called dead layers. It is particularly problematic in nanoscale oxide electronics, where the integration of strongly correlated materials into devices is obstructed by the thickness threshold required for the emergence of their functionality. Here we report the stabilization of ultrathin out-of-plane ferroelectricity in oxide heterostructures through the design of an artificial flux-closure architecture. Inserting an in-plane-polarized ferroelectric epitaxial buffer provides the continuity of polarization at the interface; despite its insulating nature, we observe the emergence of polarization in our out-of-plane-polarized model of ferroelectric BaTiO 3 from the very first unit cell. In BiFeO 3 , the flux-closure approach stabilizes a 251° domain wall. Its unusual chirality is probably associated with the ferroelectric analogue to the Dzyaloshinskii-Moriya interaction. We, thus, see that in an adaptively engineered geometry, the depolarizing-field-screening properties of an insulator can even surpass those of a metal and be a source of functionality. This could be a useful insight on the road towards the next generation of oxide electronics., (© 2023. The Author(s).)

Recently, a highly ordered Moiré dislocation lattice was identified at the interface between a SrTiO 3 (STO) thin film and the (LaAlO 3 ) 0.3 (Sr 2 TaAlO 6 ) 0.7 (LSAT) substrate. A fundamental understanding of the local ionic and electronic structures around the dislocation cores is crucial to further engineer the properties of these complex multifunctional heterostructures. Here, we combine experimental characterization via analytical scanning transmission electron microscopy with results of molecular dynamics and density functional theory calculations to gain insights into the structure and defect chemistry of these dislocation arrays. Our results show that these dislocations lead to undercoordinated Ta/Al cations at the dislocation core, where oxygen vacancies can easily be formed, further facilitated by the presence of cation vacancies. The reduced Ti 3+ observed experimentally at the dislocations by electron energy-loss spectroscopy is a consequence of both the structure of the dislocation itself and of the electron doping due to oxygen vacancy formation. Finally, the experimentally observed Ti diffusion into the LSAT around the dislocation core occurs only together with cation vacancy formation in the LSAT or Ta diffusion into STO.

Proteins unfold in chaotropic salt solutions, a process that is difficult to observe at the single protein level. The work presented here demonstrates that a liquid-based atomic force microscope and graphene liquid-cell-based scanning transmission electron microscope make it possible to observe chemically induced protein unfolding. To illustrate this capability, ferritin proteins were deposited on a graphene surface, and the concentration-dependent urea- or guanidinium-induced changes of morphology were monitored for holo-ferritin with its ferrihydrite core as well as apo-ferritin without this core. Depending on the chaotropic agent the liquid-based imaging setup captured an unexpected transformation of natively folded holo-ferritin proteins into rings after urea treatment but not after guanidinium treatment. Urea treatment of apo-ferritin did not result in nanorings, confirming that nanorings are a specific signature of denaturation of holo-ferritins after exposture to sufficiently high urea concentrations. Mapping the in situ images with molecular dynamics simulations of ferritin subunits in urea solutions suggests that electrostatic destabilization triggers denaturation of ferritin as urea makes direct contact with the protein and also disrupts the water H-bonding network in the ferritin solvation shell. Our findings deepen the understanding of protein denaturation studied using label-free techniques operating at the solid-liquid interface.

Improper ferroelectrics are expected to be more robust than conventional ferroelectrics against depolarizing field effects and to exhibit a much-desired absence of critical thickness. Recent studies, however, revealed the loss of ferroelectric response in epitaxial improper ferroelectric thin films. Here, we investigate improper ferroelectric hexagonal YMnO 3 thin films and find that the polarization suppression, and hence functionality, in the thinner films is due to oxygen off-stoichiometry. We demonstrate that oxygen vacancies form on the film surfaces to provide the necessary charge to screen the large internal electric field resulting from the positively charged YMnO 3 surface layers. Additionally, we show that by modifying the oxygen concentration of the films, the phase transition temperatures can be substantially tuned. We anticipate that our findings are also valid for other ferroelectric oxide films and emphasize the importance of controlling the oxygen content and cation oxidation states in ferroelectrics for their successful integration in nanoscale applications.

Within the emerging field of proton-conducting fuel cells, BaZr 0.9 Y 0.1 O 3-δ (BZY10) is an attractive material due to its high conductivity and stability. The fundamentals of conduction in sintered pellets and thin films heterostructures have been explored in several studies; however, the role of crystallographic orientation, grains, and grain boundaries is poorly understood for proton conduction. This article reports proton conduction in a self-assembled multi-oriented BZY10 thin film grown on top of a (110) NdGaO 3 substrate. The multiple orientations are composed of different lattices, which provide a platform to study the lattice-dependent conductivity through different orientations in the vicinity of grain boundary between them and the substrate. The crystalline stacking of each orientation is confirmed by X-ray diffraction analysis and scanning transmission electron microscopy. The transport measurements are carried out under different gas atmospheres. The highest conductivity of 3.08 × 10 -3 S cm -1 at 400 °C is found under a wet H 2 environment together with an increased lattice parameter of 4.208 Å, while under O 2 and Ar environments, the film shows lower conductivity and lattice parameter. Our findings not only demonstrate the role of crystal lattice for conduction properties but also illustrate the importance of self-assembled strategies to achieve high proton conduction in BZY10 thin films.

Charge-transfer phenomena at heterointerfaces are a promising pathway to engineer functionalities absent in bulk materials but can also lead to degraded properties in ultrathin films. Mitigating such undesired effects with an interlayer reshapes the interface architecture, restricting its operability. Therefore, developing less-invasive methods to control charge transfer will be beneficial. Here, an appropriate top-interface design allows for remote manipulation of the charge configuration of the buried interface and concurrent restoration of the ferromagnetic trait of the whole film. Double-perovskite insulating ferromagnetic La 2 NiMnO 6 (LNMO) thin films grown on perovskite oxide substrates are investigated as a model system. An oxygen-vacancy-assisted electronic reconstruction takes place initially at the LNMO polar interfaces. As a result, the magnetic properties of 2-5 unit cell LNMO films are affected beyond dimensionality effects. The introduction of a top electron-acceptor layer redistributes the electron excess and restores the ferromagnetic properties of the ultrathin LNMO films. Such a strategy can be extended to other interfaces and provides an advanced approach to fine-tune the electronic features of complex multilayered heterostructures., (© 2022 The Authors. Advanced Materials published by Wiley-VCH GmbH.)

The performance and suitability of a new electron energy filter in combination with a hybrid pixel, direct electron detector for analytical (scanning) transmission electron microscopy are demonstrated using four examples. The STEM-EELS capabilities of the CEOS Energy Filtering and Imaging Device (CEFID) were tested with focus on weak signals and high spatio-temporal resolution. A multiferroic, multilayer structure of REMnO 3 (RE = Yb, Er, Tb, Y), grown on yttria-stabilized zirconia (YSZ), is used to exemplify that this new instrumental setup produces valuable electron energy-loss spectroscopy (EELS) data at high energy losses even when using short acquisition times, providing detailed chemical information about the interfaces in this complex multilayer sample. Another functional oxide, namely a ferromagnetic La 2 NiMnO 6 thin film grown on SrTiO 3 , demonstrates that atomically resolved spectrum images can be recorded, using short dwell times and moderate beam currents in order to warrant the integrity of the sample. In a third example, inhomogeneously Er-doped YSZ shows by EELS spectrum imaging that elements at low concentrations can be detected semi-quantitatively, uncovering the expected layered Er distribution but revealing substantial interdiffusion. In a final example, we simply demonstrate that the hybrid pixel detector in combination with the energy filter can also be used for energy-filtered imaging and thus for elemental mapping complementary to EELS in scanning transmission mode., (Copyright © 2022 The Authors. Published by Elsevier Ltd.. All rights reserved.)

Phase transition points can be used to critically reduce the ionic migration activation energy, which is important for realizing high-performance electrolytes at low temperatures. Here, we demonstrate a route toward low-temperature thermionic conduction in solids, by exploiting the critically lowered activation energy associated with oxygen transport in Ca-substituted bismuth ferrite (Bi 1-x Ca x FeO 3-δ ) films. Our demonstration relies on the finding that a compositional phase transition occurs by varying Ca doping ratio across x Ca ≃ 0.45 between two structural phases with oxygen-vacancy channel ordering along <100> or <110> crystal axis, respectively. Regardless of the atomic-scale irregularity in defect distribution at the doping ratio, the activation energy is largely suppressed to 0.43 eV, compared with ~0.9 eV measured in otherwise rigid phases. From first-principles calculations, we propose that the effective short-range attraction between two positively charged oxygen vacancies sharing lattice deformation not only forms the defect orders but also suppresses the activation energy through concerted hopping., (© 2022. The Author(s).)

Ferroic order is characterized by hystereses with two remanent states and therefore inherently binary. The increasing interest in materials showing non-discrete responses, however, calls for a paradigm shift towards continuously tunable remanent ferroic states. Device integration for oxide nanoelectronics furthermore requires this tunability at the nanoscale. Here we demonstrate that we can arbitrarily set the remanent ferroelectric polarization at nanometric dimensions. We accomplish this in ultrathin epitaxial PbZr 0.52 Ti 0.48 O 3 films featuring a dense pattern of decoupled nanometric 180° domains with a broad coercive-field distribution. This multilevel switching is achieved by driving the system towards the instability at the morphotropic phase boundary. The phase competition near this boundary in combination with epitaxial strain increases the responsiveness to external stimuli and unlocks new degrees of freedom to nano-control the polarization. We highlight the technological benefits of non-binary switching by demonstrating a quasi-continuous tunability of the non-linear optical response and of tunnel electroresistance., (© 2022. The Author(s).)

Ferrimagnetic alloys are model systems for understanding the ultrafast magnetization switching in materials with antiferromagnetically coupled sublattices. Here we investigate the dynamics of the rare-earth and transition-metal sublattices in ferrimagnetic GdFeCo and TbCo dots excited by spin-orbit torques with combined temporal, spatial and elemental resolution. We observe distinct switching regimes in which the magnetizations of the two sublattices either remain synchronized throughout the reversal process or switch following different trajectories in time and space. In the latter case, we observe a transient ferromagnetic state that lasts up to 2 ns. The asynchronous switching of the two magnetizations is ascribed to the master-agent dynamics induced by the spin-orbit torques on the transition-metal and rare-earth sublattices and their weak antiferromagnetic coupling, which depends sensitively on the alloy microstructure. Larger antiferromagnetic exchange leads to faster switching and shorter recovery of the magnetization after a current pulse. Our findings provide insight into the dynamics of ferrimagnets and the design of spintronic devices with fast and uniform switching., (© 2022. The Author(s), under exclusive licence to Springer Nature Limited.)

Semiconductor quantum dots have long been considered artificial atoms, but despite the overarching analogies in the strong energy-level quantization and the single-photon emission capability, their emission spectrum is far broader than typical atomic emission lines. Here, by using ab-initio molecular dynamics for simulating exciton-surface-phonon interactions in structurally dynamic CsPbBr 3 quantum dots, followed by single quantum dot optical spectroscopy, we demonstrate that emission line-broadening in these quantum dots is primarily governed by the coupling of excitons to low-energy surface phonons. Mild adjustments of the surface chemical composition allow for attaining much smaller emission linewidths of 35-65 meV (vs. initial values of 70-120 meV), which are on par with the best values known for structurally rigid, colloidal II-VI quantum dots (20-60 meV). Ultra-narrow emission at room-temperature is desired for conventional light-emitting devices and paramount for emerging quantum light sources., (© 2022. The Author(s).)

Increased data storage densities are required for the next generation of nonvolatile random access memories and data storage devices based on ferroelectric materials. Yet, with intensified miniaturization, these devices face a loss of their ferroelectric properties. Therefore, a full microscopic understanding of the impact of the nanoscale defects on the ferroelectric switching dynamics is crucial. However, collecting real-time data at the atomic and nanoscale remains very challenging. In this work, we explore the ferroelectric response of a Pb(Zr 0.2 Ti 0.8 )O 3 thin film ferroelectric capacitor to electrical biasing in situ in the transmission electron microscope. Using a combination of high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) and differential phase contrast (DPC)-STEM imaging we unveil the structural and polarization state of the ferroelectric thin film, integrated into a capacitor architecture, before and during biasing. Thus, we can correlate real-time changes in the DPC signal with the presence of misfit dislocations and ferroelastic domains. A reduction in the domain wall velocity of 24% is measured in defective regions of the film when compared to predominantly defect-free regions.

We review the concept of surface charge, first, in the context of the polarization in ferroelectric materials and, second, in the context of layers of charged ions in ionic insulators. While the former is traditionally discussed in the ferroelectrics community and the latter in the surface science community, we remind the reader that the two descriptions are conveniently unified within the modern theory of polarization. In both cases, the surface charge leads to electrostatic instability-the so-called "polar catastrophe"-if it is not compensated, and we review the range of phenomena that arise as a result of different compensation mechanisms. We illustrate these concepts using the example of the prototypical multiferroic bismuth ferrite, BiFeO 3 , which is unusual in that its spontaneous ferroelectric polarization and the polarization arising from its layer charges can be of the same magnitude. As a result, for certain combinations of polarization orientation and surface termination, its surface charge is self-compensating. We use density functional calculations of BiFeO 3 slabs and superlattices, analysis of high-resolution transmission electron micrographs, and examples from the literature to explore the consequences of this peculiarity.

Inversion-symmetry breaking is a ubiquitous concept in condensed-matter science: It is a prerequisite for technologically relevant effects such as piezoelectricity, nonlinear optical properties, and spin-transport phenomena. It also determines abstract properties, like the electronic topology in quantum materials. Therefore, the creation of materials where inversion symmetry can be turned on or off by design may be a versatile approach for controlling parity-related functionalities. Here, we engineer inversion symmetry on a sub-unit-cell level in ultrathin hexagonal manganite films. Although an odd number of half-unit-cell layers breaks inversion symmetry, an even number of such layers remains centrosymmetric. Optical second harmonic generation as an inversion-symmetry-sensitive functionality is thus activated and deactivated on demand and at the same time used for in situ tracking of the symmetry state of our films. Symmetry engineering on the sub-unit-cell level thus suggests a new platform for controlled activation and deactivation of symmetry-governed functionalities in oxide-electronic epitaxial thin films.

The sintering of alumina (Al 2 O 3 ) traditionally occurs at high temperatures (up to ca. 1700 °C) and in significantly long times (up to several hours), which are required for the consolidation of the material by diffusion processes. Here we investigate the photonic sintering of alumina particles using millisecond flash lamp irradiation with extreme heating rates up to 10 8  K/min. The limitation of the low visible light absorption of alumina is resolved by adding colored α-Fe 2 O 3 nanoparticles, which initiated the grain growth during sintering. After the millisecond-long light pulses from a xenon flash lamp, a bimodal mixture of α-Al 2 O 3 precursor particles was sintered and iron segregation at the grain boundaries was observed. The proposed photonic sintering approach based on doping with colored centers may be extended to other refractory ceramics with low absorption in the visible light range once appropriate high-absorbing dopants are identified.

The optimization of novel transparent conductive oxides (TCOs) implies a better understanding of the role that the dopant plays on the optoelectronic properties of these materials. In this work, we perform a systematic study of the homologous series Zn k In 2 O k+3 (IZO) by characterizing the specific location of indium in the structure that leads to a nanodomain framework to release structural strain. Through a systematic study of different terms of the series, we have been able to observe the influence of the k value in the nano-structural features of this homologous series. The stabilization and visualization of the structural modulation as a function of k is discussed, even in the lowest term of the series ( k = 3). The strain fields and atomic displacements in the wurtzite structure as a consequence of the introduction of In 3+ are evaluated.

The development of energy-efficient nanoelectronics based on ferroelectrics is hampered by a notorious polarization loss in the ultrathin regime caused by the unscreened polar discontinuity at the interfaces. So far, engineering charge screening at either the bottom or the top interface has been used to optimize the polarization state. Yet, it is expected that the combined effect of both interfaces determines the final polarization state; in fact the more so the thinner a film is. The competition and cooperation between interfaces have, however, remained unexplored so far. Taking PbTiO 3 as a model system, we observe drastic differences between the influence of a single interface and the competition and cooperation of two interfaces. We investigate the impact of these configurations on the PbTiO 3 polarization when the interfaces are in close proximity, during thin-film synthesis in the ultrathin limit. By tailoring the interface chemistry towards a cooperative configuration, we stabilize a robust polarization state with giant polarization enhancement. Interface cooperation hence constitutes a powerful route for engineering the polarization in thin-film ferroelectrics towards improved integrability for oxide electronics in reduced dimension.

Direct epitaxial growth of III-Vs on silicon for optical emitters and detectors is an elusive goal. Nanowires enable the local integration of high-quality III-V material, but advanced devices are hampered by their high-aspect ratio vertical geometry. Here, we demonstrate the in-plane monolithic integration of an InGaAs nanostructure p-i-n photodetector on Si. Using free space coupling, photodetectors demonstrate a spectral response from 1200-1700 nm. The 60 nm thin devices, with footprints as low as ~0.06 μm 2 , provide an ultra-low capacitance which is key for high-speed operation. We demonstrate high-speed optical data reception with a nanostructure photodetector at 32 Gb s -1 , enabled by a 3 dB bandwidth exceeding ~25 GHz. When operated as light emitting diode, the p-i-n devices emit around 1600 nm, paving the way for future fully integrated optical links.

Four-terminal (4-T) tandem solar cells ( e . g ., perovskite/CuInSe 2 (CIS)) rely on three transparent conductive oxide electrodes with high mobility and low free carrier absorption in the near-infrared (NIR) region. In this work, a reproducible In 2 O 3 :H (IO:H) film deposition process is developed by independently controlling H 2 and O 2 gas flows during magnetron sputtering, yielding a high mobility value up to 129 cm 2 V -1 s -1 in highly crystallized IO:H films annealed at 230 °C. Optimization of H 2 and O 2 partial pressures further decreases the crystallization temperature to 130 °C. By using a highly crystallized IO:H film as the front electrode in NIR-transparent perovskite solar cell (PSC), a 17.3% steady-state power conversion efficiency and an 82% average transmittance between 820 and 1300 nm are achieved. In combination with an 18.1% CIS solar cell, a 24.6% perovskite/CIS tandem device in 4-T configuration is demonstrated. Optical analysis suggests that an amorphous IO:H film (without postannealing) and a partially crystallized IO:H film (postannealed at 150 °C), when used as a rear electrode in a NIR-transparent PSC and a front electrode in a CIS solar cell, respectively, can outperform the widely used indium-doped zinc oxide (IZO) electrodes, leading to a 1.38 mA/cm 2 short-circuit current ( J sc ) gain in the bottom CIS cell of 4-T tandems.

Solution-processed lead sulfide quantum dots (PbS QDs) are very attractive as NIR-active semiconductors for the fabrication of cost-efficient optoelectronic devices. To control the thin film carrier transport, as well as stability, surface passivation is of crucial importance. Here, we present the successful surface passivation of PbS QDs by the formamidinium lead iodide (FAPbI 3 ) ligand. An effective procedure for the fabrication of FAPbI 3 -passivated PbS QDs through a binary-phase ligand exchange protocol in hexane and n -methylformamide is demonstrated. It is shown that this solution-processed ligand exchange drastically changes the photoluminescence intensity, exciton recombination dynamics, and carrier lifetime of the nanocrystals. The solution casting of the ligand-exchanged nanocrystals into thin films results in the periodic ordering of QDs in a square superlattice with close contacts. Planar graphene/QD photodetectors fabricated with PbS QDs passivated with FAPbI 3 show substantially increased thermal stability as compared to similar devices using PbS QDs passivated with commonly used methylammonium lead iodide., Competing Interests: The authors declare no competing financial interest., (Copyright © 2020 American Chemical Society.)

Charged domain walls in ferroelectrics hold great promise for the design of novel electronic devices due to their enhanced local conductivity. In fact, charged domain walls show unique properties including the possibility of being created, moved and erased by an applied voltage. Here, we demonstrate that the charged domain walls are constituted by a core region where most of the screening charge is localized and such charge accumulation is responsible for their enhanced conductivity. In particular, the link between the local structural distortions and charge screening phenomena in 109° tail-to-tail domain walls of BiFeO3 is elucidated by a series of multiscale analysis performed by means of scanning probe techniques, including conductive atomic force microscopy (cAFM) and atomic resolution differential phase contrast scanning transmission electron microscopy (DPC-STEM). The results prove that an accumulation of oxygen vacancies occurs at the tail-to-tail domain walls as the leading charge screening process. This work constitutes a new insight in understanding the behavior of such complex systems and lays down the fundaments for their implementation into novel nanoelectronic devices.

The secondary nature of polarization in improper ferroelectrics promotes functional properties beyond those of conventional ferroelectrics. In technologically relevant ultrathin films, however, the improper ferroelectric behavior remains largely unexplored. Here, we probe the emergence of the coupled improper polarization and primary distortive order parameter in thin films of hexagonal YMnO 3 . Combining state-of-the-art in situ characterization techniques separately addressing the improper ferroelectric state and its distortive driving force, we reveal a pronounced thickness dependence of the improper polarization, which we show to originate from the strong modification of the primary order at epitaxial interfaces. Nanoscale confinement effects on the primary order parameter reduce the temperature of the phase transition, which we exploit to visualize its order-disorder character with atomic resolution. Our results advance the understanding of the evolution of improper ferroelectricity within the confinement of ultrathin films, which is essential for their successful implementation in nanoscale applications.

We identify a transient enhancement of the depolarizing field, leading to an unexpected quench of net polarization, during the growth of a prototypical metal-ferroelectric-metal epitaxial system made of BaTiO&#95;{3} and SrRuO&#95;{3}. Reduced conductivity and, hence, charge screening efficiency in the early growth stage of the SrRuO&#95;{3} top electrode promotes a breakdown of ferroelectric BaTiO&#95;{3} into domains. We demonstrate how a thermal annealing procedure can recover the single-domain state. By tracking the polarization state in situ, using optical second harmonic generation, we bring new understanding to interface-related electrostatic effects in ferroelectric capacitors.

Dual-ion batteries (DIBs) are electrochemical energy storage devices that operate by the simultaneous participation of two different ion species at the anode and cathode and rely on the use of an electrolyte that can withstand the high operation potential of the cathode. Under such conditions at the cathode, issues associated with the irreversible capacity loss and the formation of solid-electrolyte interphase at the surface of highly porous electrode materials are far less significant than at lower potentials, permitting the exploration of high surface area, permanently porous framework materials as effective charge storage media. This concept is investigated herein by employing zeolite-templated carbon (ZTC) as a cathode in a dual-ion battery based on a potassium bis(fluorosulfonyl)imide (KFSI) electrolyte. Anion (FSI - ) insertion within the pore network during electrochemical cycling is confirmed by NMR spectroscopy, and the maximum charge capacity is found to be proportional to surface area and micropore volume by comparison to other microporous carbon materials. Full cells based on ZTC as the cathode exhibit both high specific energy (up to 176 Wh kg -1 , 79.8 Wh L -1 ) and high specific power (up to 3945 W kg -1 , 1095 W L -1 ), stable cycling performance over hundreds of cycles, and reversibility within the potential range of 2.65-4.7 V versus K/K + .

InGaAs is a potential candidate for Si replacement in upcoming advanced technological nodes because of its excellent electron transport properties and relatively low interface defect density in dielectric gate stacks. Therefore, integrating InGaAs devices with the established Si platforms is highly important. Using template-assisted selective epitaxy (TASE), InGaAs nanowires can be monolithically integrated with high crystal quality, although the mechanisms of group III incorporation in this ternary material have not been thoroughly investigated. Here we present a detailed study of the compositional variations of InGaAs nanostructures epitaxially grown on Si(111) and Silicon-on-insulator substrates by TASE. We present a combination of XRD data and detailed EELS maps and find that the final Ga/In chemical composition depends strongly on both growth parameters and the growth facet type, leading to complex compositional sub-structures throughout the crystals. We can further conclude that the composition is governed by the facet-dependent chemical reaction rates at low temperature and low V/III ratio, while at higher temperature and V/III ratio, the incorporation is transport limited. In this case we see indications that the transport is a competition between Knudsen flow and surface diffusion.

The interfacial Dzyaloshinskii-Moriya interaction (DMI) is important for chiral domain walls (DWs) and for stabilizing magnetic skyrmions. We study the effects of introducing increasing thicknesses of Ir, from zero to 2 nm, into a Pt/Co/Ta multilayer between the Co and Ta layers. There is a marked increase in magnetic moment, due to the suppression of the dead layer at the interface with Ta, but the perpendicular anisotropy is hardly affected. All samples show a universal scaling of the field-driven DW velocity across the creep and depinning regimes. Asymmetric bubble expansion shows that DWs in all of the samples have the left-handed Néel form. The value of in-plane magnetic field at which the creep velocity shows a minimum drops markedly on the introduction of Ir, as does the frequency shift of the Stokes and anti-Stokes peaks in Brillouin light scattering (BLS) measurements. Despite this qualitative similarity, there are quantitative differences in the DMI strength given by the two measurements, with BLS often returning higher values. Many features in bubble expansion velocity curves do not fit simple models commonly used, namely a lack of symmetry about the velocity minimum and no difference in velocities at high in-plane fields. These features are explained by the use of a new model in which the depinning field is allowed to vary with in-plane field in a way determined from micromagnetic simulations. This theory shows that the velocity minimum underestimates the DMI field, consistent with BLS giving higher values. Our results suggest that the DMI at an Ir/Co interface has the same sign as the DMI at a Pt/Co interface.

Using an epitaxial thin-film model system deposited by pulsed laser deposition (PLD), we study the Li-ion conductivity in Li 4 Ti 5 O 12 , a common anode material for Li-ion batteries. Epitaxy, phase purity, and film composition across the film thickness are verified employing out-of-plane and in-plane X-ray diffraction, transmission electron microscopy, time-of-flight mass spectrometry, and elastic recoil detection analysis. We find that epitaxial Li 4 Ti 5 O 12 behaves like an ideal ionic conductor that is well described by a parallel RC equivalent circuit, with an ionic conductivity of 2.5 × 10 -5 S/cm at 230 °C and an activation energy of 0.79 eV in the measured temperature range of 205 to 350 °C. Differently, in a co-deposited polycrystalline Li 4 Ti 5 O 12 thin film with an average in-plane grain size of <10 nm, a more complex behavior with contributions from two distinct processes is observed. Ultimately, epitaxial Li 4 Ti 5 O 12 thin films can be grown by PLD and reveal suitable transport properties for further implementation as zero-strain and grain boundary free anodes in future solid-state microbattery designs.

We report on the application of Zn x Ti y O deposited by atomic layer deposition (ALD) as buffer layer in thin film Cu(In,Ga)Se 2 (CIGS) solar cells to improve the photovoltaic device performance. State-of-the-art CIGS devices employ a CdS/ZnO layer stack sandwiched between the absorber layer and the front contact. Replacing the sputter deposited ZnO with ALD-Zn x Ti y O allowed a reduction of the CdS layer thickness without adversely affecting open-circuit voltage ( V OC ). This leads to an increased photocurrent density with a device efficiency of up to 20.8% by minimizing the parasitic absorption losses commonly observed for CdS. ALD was chosen as method to deposit homogeneous layers of Zn x Ti y O with varying Ti content with a [Ti]/([Ti] + [Zn]) atomic fraction up to ∼0.35 at a relatively low temperature of 373 K. The Ti content influenced the absorption behavior of the Zn x Ti y O layer by increasing the optical bandgap >3.5 eV in the investigated range. Temperature-dependent current-voltage ( I- V) measurements of solar cells were performed to investigate the photocurrent blocking behavior observed for high Ti content. Possible conduction band discontinuities introduced by Zn x Ti y O are discussed based on X-ray photoelectron spectroscopy (XPS) measurements.

Crystal defects present in GaAs nanocrystals ∼15-50 nm in diameter and grown by metal organic vapor phase epitaxy on top of two different nanopatterned Si(001) substrates (nanopillars and nanotips with ∼40-80 nm openings embedded in a SiO 2 matrix) and on a planar substrate, have been investigated by means of atomic-resolution aberration-corrected scanning transmission electron microscopy. Conditions of their formation are discussed. The defect analysis of the three GaAs/Si systems reveals a higher defect density in the GaAs crystals grown on nanopillars as compared to those grown on nanotips and the planar substrate, possibly concomitant to the atomic-scale irregularities identified at the patterned Si(001) nanopillars. It is concluded that the misfit strain in the GaAs nanocrystals is fully plastically relaxed while no noticeable substrate compliance effects are observed on any of the studied substrates., (Copyright © 2018 Elsevier Ltd. All rights reserved.)

Today, silicon is the most used material in photovoltaics, with the maximum conversion efficiency getting very close to the Shockley-Queisser limit for single-junction devices. Integrating silicon with higher band-gap ternary III-V absorbers is the path to increase the conversion efficiency. Here, we report on the first monolithic integration of Ga x In (1- x) P vertical nanowires, and the associated p-n junctions, on silicon by the Au-free template-assisted selective epitaxy (TASE) method. We demonstrate that TASE allows for a high chemical homogeneity of ternary alloys through the nanowires. We then show the influence of doping on the chemical composition and crystal phase, the latter previously attributed to the role of the contact angle in the liquid phase in the vapor-liquid-solid technique. Finally, the emission of the p-n junction is investigated, revealing a shift in the energy of the intraband levels due to the incorporation of dopants. These results clarify some open questions on the effects of doping on ternary III-V nanowire growth and provide the path toward their integration on the silicon platform in order to apply them in next-generation photovoltaic and optoelectronic devices.

The ultimate challenge for the development of new multiferroics with enhanced properties lies in achieving nanoscale control of the coupling between different ordering parameters. In oxide-based multiferroics, substitutional cation dopants offer the unparalleled possibility to modify both the electric and magnetic properties at a local scale. Herein it is demonstrated the formation of a dopant-controlled polar pattern in BiFeO 3 leading to the spontaneous instauration of periodic polarization waves. In particular, nonpolar Ca-doped rich regions act as spacers between consecutive dopant-depleted regions displaying coupled ferroelectric states. This alternation of layers with different ferroelectric state creates a novel vertical polar structure exhibiting giant polarization gradients as large as 70 μC cm -2 across 30 Å thick domains. The drastic change in the polar state of the film is visualized using high-resolution differential phase-contrast imaging able to map changes in ferroelectric polarization at atomic scale. Furthermore, a periodic distortion in the Fe-O-Fe bonding angle suggests a local variation in the magnetic ordering. The findings provide a new insight into the role of doping and reveal hitherto unexplored means to tailor the functional properties of multiferroics by doping engineering.

In this work, a systematic study of the effect of electron dose rate, solute concentration, imaging mode (broad beam vs scanning probe mode), and liquid cell setup (static vs flow mode) on the growth mechanism and the ultimate morphology of Au nanoparticles (NPs) was performed in chloroauric acid (HAuCl 4 ) aqueous solutions using in situ liquid-cell TEM (LC-TEM). It was found that a diffusion limited growth dominates at high dose rates, especially for the solution with the lowest concentration (1 mM), resulting in formation of dendritic NPs. Growth of 2D Au plates driven by a reaction limited mechanism was only observed at low dose rates for the 1 mM solution. For the 5 mM and 20 mM solutions, reaction limited growth can still be induced at higher dose rates, due to abundance of the precursor available in the solutions, leading to formation of 2D plates or 3D faceted NPs. As a proof-of-concept, an Au nanostructure with a 3D faceted particle core and a dendritic shell can be in situ produced by simply tuning the electron dose in the 1 mM solution irradiated in a flow cell setup in the STEM mode. This work paves the way to study the growth of complex heteronanostructures composed of multiple elements in LC-TEM., Competing Interests: The authors declare no competing financial interest.

The early growth stage of GaAs by metal organic vapor phase epitaxy on a novel kind of Si substrate is investigated. The substrate consists of nanotips (NTs) fabricated on a Si(001) wafer by means of lithography and reactive ion etching. 3D GaAs nanocrystals are found to nucleate with a probability of 90% on the (n0m), (-n0m), (0nm), and (0-nm) facets (n, m integers) of these NTs. Additionally, in terms of nucleation yield, an average of 2 GaAs nanocrystals in each of those facets is observed. By contrast, facets of type {±nnm} remain virtually free of any 3D nuclei. A simple model based on the kinetics of the growth is used to explain the facet selective 3D nucleation. The model is consistent with a similar selectivity observed on micrometer-sized substrate features., (© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

III-V compound semiconductors are indispensable materials for today's high-end electronic and optoelectronic devices and are being explored for next-generation transistor logic and quantum technologies. III-V surfaces and interfaces play the leading role in determining device performance, and therefore, methods to control their electronic properties have been developed. Typically, surface passivation studies demonstrated how to limit the density of surface states. Strain has been widely used to improve the electronic transport properties and optoelectronic properties of III-Vs, but the potential of this technology to modify the surface properties still remains to be explored. Here we show that uniaxial stress induces a shift in the energy of the surface states of III-V nanowires, modifying their electronic properties. We demonstrate this phenomenon by modulating the conductivity of InAs nanowires over 4 orders of magnitude with axial strain ranging between -2.5% in compression and 2.1% in tension. The band bending at the surface of the nanostructure is modified from accumulation to depletion reversibly and reproducibly. We provide evidence of this physical effect using a combination of electrical transport measurement, Raman spectroscopy, band-structure modeling, and technology computer aided design (TCAD) simulations. With this methodology, the deformation potentials for the surface states are quantified. These results reveal that strain technology can be used to shift surface states away from energy ranges in which device performance is negatively affected and represent a novel route to engineer the electronic properties of III-V devices.

The development of new electro-optical devices and the realization of novel types of transistors require a profound understanding of the structural characteristics of new semiconductor heterostructures. This article provides a concise review about structural defects which occur in semiconductor heterostructures on the basis of micro-patterned Si substrates. In particular, one- and two-dimensional crystal defects are being discussed which are due to the plastic relaxation of epitaxial strain caused by the misfit of crystal lattices. Besides a few selected examples from literature, we treat in particular crystal defects occurring in GaAs/Si, Ge/Si and β-SiC/Si structures which are studied by high-resolution annular dark-field scanning transmission electron microscopy. The relevance of this article is twofold; firstly, it should provide a collection of data which are of help for the identification and characterization of defects in cubic semiconductors by means of atomic-resolution imaging, and secondly, the experimental data shall provide a basis for advancing the understanding of device characteristics with the aid of theoretical modelling by considering the defective nature of strained semiconductor heterostructures., (Copyright © 2016 Elsevier B.V. All rights reserved.)

GaSb nanostructures integrated on Si substrates are of high interest for p-type transistors and mid-IR photodetectors. Here, we investigate the metalorganic chemical vapor deposition and properties of GaSb nanostructures monolithically integrated onto silicon-on-insulator wafers using template-assisted selective epitaxy. A high degree of morphological control allows for GaSb nanostructures with critical dimensions down to 20 nm. Detailed investigation of growth parameters reveals that the GaSb growth rate is governed by the desorption processes of an Sb surface layer and, in turn, is insensitive to changes in material transport efficiency. The GaSb crystal structure is typically zinc-blende with a low density of rotational twin defects, and even occasional twin-free structures are observed. Hall/van der Pauw measurements are conducted on 20 nm-thick GaSb nanostructures, revealing high hole mobility of 760 cm 2 /(V s), which matches literature values for high-quality bulk GaSb crystals. Finally, we demonstrate a process that enables cointegration of GaSb and InAs nanostructures in close vicinity on Si, a preferred material combination ideally suited for high-performance complementary III-V metal-oxide-semiconductor technology.

Controlled synthesis of a hybrid nanomaterial based on titanium oxide and single-layer graphene (SLG) using atomic layer deposition (ALD) is reported here. The morphology and crystallinity of the oxide layer on SLG can be tuned mainly with the deposition temperature, achieving either a uniform amorphous layer at 60 °C or ∼2 nm individual nanocrystals on the SLG at 200 °C after only 20 ALD cycles. A continuous and uniform amorphous layer formed on the SLG after 180 cycles at 60 °C can be converted to a polycrystalline layer containing domains of anatase TiO 2 after a postdeposition annealing at 400 °C under vacuum. Using aberration-corrected transmission electron microscopy (AC-TEM), characterization of the structure and chemistry was performed on an atomic scale and provided insight into understanding the nucleation and growth. AC-TEM imaging and electron energy loss spectroscopy revealed that rocksalt TiO nanocrystals were occasionally formed at the early stage of nucleation after only 20 ALD cycles. Understanding and controlling nucleation and growth of the hybrid nanomaterial are crucial to achieving novel properties and enhanced performance for a wide range of applications that exploit the synergetic functionalities of the ensemble.

We present the nanoheteroepitaxial growth of gallium arsenide (GaAs) on nano-patterned silicon (Si) (001) substrates fabricated using a CMOS technology compatible process. The selective growth of GaAs nano-crystals (NCs) was achieved at 570 °C by MOVPE. A detailed structure and defect characterization study of the grown nano-heterostructures was performed using scanning transmission electron microscopy, x-ray diffraction, micro-Raman, and micro-photoluminescence (μ-PL) spectroscopy. The results show single-crystalline, nearly relaxed GaAs NCs on top of slightly, by the SiO 2 -mask compressively strained Si nano-tips (NTs). Given the limited contact area, GaAs/Si nanostructures benefit from limited intermixing in contrast to planar GaAs films on Si. Even though a few growth defects (e.g. stacking faults, micro/nano-twins, etc) especially located at the GaAs/Si interface region were detected, the nanoheterostructures show intensive light emission, as investigated by μ-PL spectroscopy. Achieving well-ordered high quality GaAs NCs on Si NTs may provide opportunities for superior electronic, photonic, or photovoltaic device performances integrated on the silicon technology platform.

Nano-heteroepitaxial growth of GaAs on Si(001) by metal organic vapor phase epitaxy was investigated to study emerging materials phenomena on the nano-scale of III-V/Si interaction. Arrays of Si nano-tips (NTs) embedded in a SiO 2 matrix were used as substrates. The NTs had top Si openings of 50-90 nm serving as seeds for the selective growth of GaAs nano-crystals (NCs). The structural and morphological properties were investigated by high resolution scanning electron microscopy, atomic force microscopy, electron backscatter diffraction, x-ray diffraction, and high resolution scanning transmission electron microscopy. The GaAs growth led to epitaxial NCs featuring a bi-modal distribution of size and morphology. NCs of small size exhibited high structural quality and well-defined {111}-{100} faceting. Larger clusters had less regular shapes and contained twins. The present work shows that the growth of high quality GaAs NCs on Si NTs is feasible and can provide an alternate way to the integration of compound semiconductors with Si micro- and opto-electronics technology.

Significant progress has been made in integrating novel materials into silicon photonic structures in order to extend the functionality of photonic circuits. One of these promising optical materials is BaTiO 3 or barium titanate (BTO) that exhibits a very large Pockels coefficient as required for high-speed light modulators. However, all previous demonstrations show a noticable reduction of the Pockels effect in BTO thin films deposited on silicon substrates compared to BTO bulk crystals. Here, we report on the strong dependence of the Pockels effect in BTO thin films on their microstructure, and provide guidelines on how to engineer thin films with strong electro-optic response. We employ several deposition methods such as molecular beam epitaxy and chemical vapor deposition to realize BTO thin films with different morphology and crystalline structure. While a linear electro-optic response is present even in porous, polycrystalline BTO thin films with an effective Pockels coefficient r eff  = 6 pm V -1 , it is maximized for dense, tetragonal, epitaxial BTO films (r eff  = 140 pm V -1 ). By identifying the key structural predictors of electro-optic response in BTO/Si, we provide a roadmap to fully exploit the linear electro-optic effect in novel hybrid oxide/semiconductor nanophotonic devices.

Non-Ising-like 180° ferroelectric domain wall architecture and domain distribution in tetragonal PbZr x Ti 1- x O 3 thin films are probed using a combination of optical second harmonic generation and scanning transmission electron microscopy. In the remnant state, a specific nonlinear optical signature of tilted 180° domain walls corresponding to a mixed Ising-Néel-type rotation of polarization across the wall is shown., (© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

Hole spins have gained considerable interest in the past few years due to their potential for fast electrically controlled qubits. Here, we study holes confined in Ge hut wires, a so-far unexplored type of nanostructure. Low-temperature magnetotransport measurements reveal a large anisotropy between the in-plane and out-of-plane g-factors of up to 18. Numerical simulations verify that this large anisotropy originates from a confined wave function of heavy-hole character. A light-hole admixture of less than 1% is estimated for the states of lowest energy, leading to a surprisingly large reduction of the out-of-plane g-factors compared with those for pure heavy holes. Given this tiny light-hole contribution, the spin lifetimes are expected to be very long, even in isotopically nonpurified samples.

We report a new methodology based on glancing angle deposition (GLAD) of an organic molecule in combination with perpendicular growth of a second inorganic material. The resulting thin films retain a very well-defined tilted columnar microstructure characteristic of GLAD with the inorganic material embedded inside the columns. We refer to this new methodology as growth assisted by glancing angle deposition or GAGLAD, since the material of interest (here, the inorganic) grows in the form of tilted columns, though it is deposited under a nonglancing configuration. As a "proof of concept", we have used silver and zinc oxide as the perpendicularly deposited material since they usually form ill-defined columnar microstructures at room temperature by GLAD. By means of our GAGLAD methodology, the typical tilted columnar microstructure can be developed for materials that otherwise do not form ordered structures under conventional GLAD. This simple methodology broadens significantly the range of materials where control of the microstructure can be achieved by tuning the geometrical deposition parameters. The two examples presented here, Ag/Alq3 and ZnO/Alq3, have been deposited by physical vapor deposition (PVD) and plasma enhanced chemical vapor deposition (PECVD), respectively: two different vacuum techniques that illustrate the generality of the proposed technique. The two type of hybrid samples present very interesting properties that demonstrate the potentiality of GAGLAD. On one hand, the Ag/Alq3 samples present highly optical anisotropic properties when they are analyzed with linearly polarized light. To our knowledge, these Ag/Alq3 samples present the highest angular selectivity reported in the visible range. On the other hand, ZnO/Alq3 samples are used to develop highly porous ZnO thin films by using Alq3 as sacrificial material. In this way, antireflective ZnO samples with very low refractive index and extinction coefficient have been obtained.

Carbon-based electronics is a promising alternative to traditional silicon-based electronics as it could enable faster, smaller and cheaper transistors, interconnects and memory devices. However, the development of carbon-based memory devices has been hampered either by the complex fabrication methods of crystalline carbon allotropes or by poor performance. Here we present an oxygenated amorphous carbon (a-COx) produced by physical vapour deposition that has several properties in common with graphite oxide. Moreover, its simple fabrication method ensures excellent reproducibility and tuning of its properties. Memory devices based on a-COx exhibit outstanding non-volatile resistive memory performance, such as switching times on the order of 10 ns and cycling endurance in excess of 10(4) times. A detailed investigation of the pristine, SET and RESET states indicates a switching mechanism based on the electrochemical redox reaction of carbon. These results suggest that a-COx could play a key role in non-volatile memory technology and carbon-based electronics.