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The electronic properties of hydrogenated, spherical, Si/Ge and Ge/Si core-shell nanocrystals with a diameter ranging from 1.8 to 4.0 nm are studied within Density Functional Theory. Effects induced by quantum confinement and strain on the near-band-edge states localization, as well as the band-offset properties between Si and Ge regions, are investigated in detail. On the one hand, we prove that Si(core)/Ge(shell) nanocrystals always show a type II band-offset alignment, with the HOMO mainly localized on the Ge shell region and the LUMO mainly localized on the Si core region. On the other hand, our results point out that a type II offset cannot be observed in small (diameter less than 3 nm) Ge(core)/Si(shell) nanocrystals. In these systems, quantum confinement and strain drive the near-band-edge states to be mainly localized on Ge atoms inducing a type I alignment. In larger Ge(core)/Si(shell) nanocrystals, instead, the formation of a type II offset can be engineered by playing with both core and shell thickness. The conditions that favor the transition from a type I to a type II alignment for Ge(core)/Si(shell) nanocrystals are discussed in detail., 12 pages, 7 figures

The study of intra and interlayer excitons in 2D semiconducting vdW heterostructures is a very hot topic not only from a fundamental but also an applicative point of view. Due to their strong light–matter interaction, Transition Metal Dichalcogenides (TMD) and group-III nitrides are particularly attractive in the field of opto-electronic applications such as photo-catalytic and photo-voltaic ultra-thin and flexible devices. Using first-principles ground and excited-state simulations, we investigate here the electronic and excitonic properties of a representative nitride/TMD heterobilayer, the AlN/WS2. We demonstrate that the band alignment is of type I, and low energy intralayer excitons are similar to those of a pristine WS2 monolayer. Further, we disentangle the role of strain and AlN dielectric screening on the electronic and optical gaps. These results, although they do not favor the possible use of AlN/WS2 in photo-catalysis, as envisaged in the previous literature, can boost the recently started experimental studies of 2D hexagonal aluminum nitride as a good low screening substrate for TMD-based electronic and opto-electronic devices. Importantly, our work shows how the inclusion of both spin-orbit and many-body interactions is compulsory for the correct prediction of the electronic and optical properties of TMD/nitride heterobilayers.

We report a non-invasive and multi-analytical physico-chemical method for the characterization of paper artworks, able to identify sizing, inks, and glues and to quantify oxidative degradation by-products. The proposed methodology is mostly carried out in situ by using easy-to-use and cheap portable instrumentation for the acquisition of multispectral images, punctual ultraviolet-visible-near infrared fiber-optics reflectance spectroscopy (FORS) and punctual fiber optics fluorescence spectroscopy. Further analytical information is provided by non-invasive in-situ sampling of paper surface by using soft latex sponges, making possible laboratory chromatographic and infrared spectroscopic analyses on the aqueous sponge extracts. The proposed diagnostics method was applied to two 17th century letters written by St Francis of Sales (1567-1622), collected at the Chigi Palace in the town of Ariccia (Italy). Results show an intense oxidative degradation of the letters, also localized in water spots, and the presence of carboxylic acids by-products. Analysis of FORS spectra provided the concentration of chromophores in the paper substrate. The diagnostic method allowed the identification of gelatin sizing, the presence of starch glue in specific areas of the letters and the type of ink used in the text. Our diagnostic approach aims to offer to conservator-restorer a characterization of a paper artwork, that can be applied to other, for a correct planning of conservation interventions.

International audience; In this work, we study the structural and electronic properties of boron nitride bilayers sandwiched between graphene sheets. Different stacking, twist angles, doping, as well as an applied external gate voltage, are reported to induce important changes in the electronic band structure near the Fermi level. Small electronic lateral gaps of the order of few meV can appear near the Dirac points K. We further discuss how the bandstructures change applying a perpendicular external electric field, showing how its application lifts the degeneracy of the Dirac cones and, in the twisted case, moves their crossing points away from the Fermi energy. Then, we consider the possibility of co-doping, in an asymmetric way, the two external graphene layers. This is a situation that could be realized in heterostructures deposited on a substrate. We show that the co-doping acts as an effective external electric field, breaking the Dirac cones degeneracy. Finally, our work demonstrates how, by playing with field strength and p-n co-doping, it is possible to tune the small lateral gaps, pointing towards a possible application of C/BN sandwich structures as nano-optical terahertz devices.

The thermodynamic stability of hydroxylated graphane, that is, fully sp3 graphene derivatives coordinated with -H and -OH groups, has been recently demonstrated by ab initio calculations. Within the density functional theory approach, we investigate the electronic property modifications of graphane by progressive hydroxylation, that is, by progressively substituting -H with -OH groups. When 50% of graphane is hydroxylated, the energy bandgap reaches its largest value of 6.68 eV. The electronic affinity of 0.8 eV for graphane can widely change in the 0.28-1.60 eV range depending on the geometric configuration. Hydroxylated graphane has two interfaces with vacuum, hence its electron affinity can be different on each interface with the formation of an intrinsic dipole perpendicular to the monolayer. We envisage the possibility of using hydroxylated graphane allotropes with tunable electronic affinity to serve as interfacial layers in 2D material-based heterojunctions.

The fascinating electronic and optoelectronic properties of freestanding graphene and the possible inclusion of novel two-dimensional (2D) systems in silicon-based electronics have driven the search for atomic layers consisting of other group-IV elements Si, Ge, Sn, and Pb, which form similar hexagonal lattices and are isoelectronic to graphene. The resulting 2D crystals silicene, germanene, stanene and plumbene, referred as Xenes, but also their functionalized counterparts, e.g. the hydrogenated sheet crystals, named as Xanes, silicane, germanane, and stanane, are in the focus of this review article. In addition, halogenated Xenes are investigated. The consequences of the larger atomic radii on the atomic geometry, the energetic stability, and possible epitaxial preparations are discussed. In the case of honeycomb atomic arrangements, the low-energy electronic excitations are ruled by almost linear bands. Spin–orbit coupling opens small gaps leading to Dirac fermions with finite effective masses. The linear bands give rise to an absorbance of the Xenes determined by the finestructure constant in the long-wavelength regime. While for vanishing photon energies the excitonic influence is still an open question, saddle-point excitons and excitons at M 0 van Hove singularities appear at higher frequencies. After opening substantial fundamental gaps by hydrogenation, the absorption edges of the Xanes, silicane, germanane, and stanane, are dominated by bound excitons with extremely large binding energies. Other chemical functionalizations, but also vertical electric fields, yield electronic structures ranging from topological to trivial insulators. Even a quantum spin Hall phase is predicted at room temperature. The topological character and the possible quantization of the spin Hall conductivity are studied versus gap inversion, chemical functionalization, and Rashba spin–orbit interaction. The drastic changes of the electronic properties of Xenes with chemical functionalization, interaction with the substrate, and external perturbations, open future opportunities for tailoring fundamental properties and, therefore, interesting applications in novel electronic and optoelectronic nanodevices.

Combining scanning tunneling microscopy and angle-resolved photoemission spectroscopy, we demonstrate how to tune the doping of epitaxial graphene from p to n by exploiting the structural changes that occur spontaneously on the Ge surface upon thermal annealing. Furthermore, using first-principle calculations, we build a model that successfully reproduces the experimental observations. Since the ability to modify graphene electronic properties is of fundamental importance when it comes to applications, our results provide an important contribution toward the integration of graphene with conventional semiconductors.

We perform a systematic {\it ab initio} study of the work function and its uniform strain dependence for graphene and silicene for both tensile and compressive strains. The Poisson ratios associated with armchair and zigzag strains are also computed. Based on these results, we obtain the deformation potential, crucial for straintronics, as a function of the applied strain. Further, we propose a particular experimental setup with a special strain configuration that generates only the electric field, while the pseudomagnetic field is absent. Then, applying a real magnetic field, one should be able to realize experimentally the spectacular phenomenon of the collapse of Landau levels in graphene or related two-dimensional materials., 9 pages, 7 figures; final version published in PRB

Development of on-chip integrated carbon-based optoelectronic nanocircuits requires fast and non-invasive structural characterization of their building blocks. Recent advances in synthesis of single wall carbon nanotubes and graphene nanoribbons allow for their use as atomically precise building blocks. However, while cataloged experimental data are available for the structural characterization of carbon nanotubes, such an atlas is absent for graphene nanoribbons. Here we theoretically investigate the optical absorption resonances of armchair carbon nanotubes and zigzag graphene nanoribbons continuously spanning the tube (ribbon) transverse sizes from 0.5(0.4) nm to 8.1(12.8) nm. We show that the linear mapping is guaranteed between the tube and ribbon bulk resonance when the number of atoms in the tube unit cell is \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$2N+4$$\end{document}2N+4, where \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$N$$\end{document}N is the number of atoms in the ribbon unit cell. Thus, an atlas of carbon nanotubes optical transitions can be mapped to an atlas of zigzag graphene nanoribbons., The authors combine ab-initio density functional theory with tight-binding calculations to investigate the optical absorption resonances of armchair carbon nanotubes and zigzag graphene nanoribbons, and show that an atlas of carbon nanotubes optical transitions can be mapped to an atlas of optical resonances of zigzag graphene nanoribbons.

Thanks to the ultrahigh flexibility of 2D materials and to their extreme sensitivity to applied strain, there is currently a strong interest in studying and understanding how their electronic properties can be modulated by applying a uniform or nonuniform strain. In this work, using density functional theory (DFT) calculations, we discuss how uniform biaxial strain affects the electronic properties, such as ionization potential, electron affinity, electronic gap, and work function, of different classes of 2D materials from X-enes to nitrides and transition metal dichalcogenides. The analysis of the states in terms of atomic orbitals allows to explain the observed trends and to highlight similarities and differences among the various materials. Moreover, the role of many-body effects on the predicted electronic properties is discussed in one of the studied systems. We show that the trends with strain, calculated at the GW level of approximation, are qualitatively similar to the DFT ones solely when there is no change in the character of the valence and conduction states near the gap.

International audience; Electronic properties and lattice dynamics of bulk ɛ-GaSe and one, two, and three tetralayers GaSe are investigated by means of density functional and density functional perturbation theory. The few-tetralayer systems are semiconductors with an indirect nature of the fundamental band gap and a Mexican-hat shape is observed at the top of the valence band. The phonon branch analysis reveals the dynamical stability for all systems considered together with the LO-TO splitting breakdown in two-dimensional systems. In-plane (E) and out-of-plane (A) zone-center lattice vibrations dominate the Raman and IR spectra.

Abstract By means of ab initio band structure methods and model Hamiltonians we investigate the electronic, spin and topological properties of four monopnictides crystallizing in bct structure. We show that the Weyl bands around a WP W1 or W2 possess a strong anisotropy and tilt of the accompanying Dirac cones. These effects are larger for W2 nodes than for W1 ones. The node tilts and positions in energy space significantly influence the DOS of single-particle Weyl excitations. The node anisotropies destroy the conventional picture of (anti)parallel spin and wave vector of a Weyl fermion. This also holds for the Berry curvature around a node, while the monopole charges are independent as integrated quantities. The pairing of the nodes strongly modifies the spin texture and the Berry curvature for wave vectors in between the two nodes. Spin components may change their orientation. Integrals over planes perpendicular to the connection line yield finite Zak phases and winding numbers for planes between the two nodes, thereby indicating the topological character. Graphical abstract

The discoloration of paper, due to the development of oxidized groups acting as chromophores in its chief component, cellulose, is responsible for severe visual degradation of works of art on paper. By adopting a diagnostic method based on in situ non-invasive optical reflectance spectroscopy and time-dependent density functional theory ab initio calculations, it is possible to describe and quantify the chromophores in cellulose fibers in a non-destructive way. In order to recover the absorption coefficient of cellulose fibers from reflectance measurements a specific approach based on the Kubelka-Munk theory was applied. The concentrations of carbonyl groups acting as chromophores were obtained by fitting the experimental optical absorption spectra to those simulated by using ab initio calculations. This method was applied for monitoring the restoration interventions of two great format engravings Le Nozze di Psiche and Gesu Cristo e l’adultera by Diana Scultori (1547-1612), as well as a contemporary artwork by Renato Guttuso, Bozzetto per Crocifissione (dated 1940). All artefacts were affected by chromatic deterioration due to a strong oxidation of the paper. Results quantified the decreasing of chromophores concentration after washing and reducing treatments evidencing the different behavior of the carbonyl groups as a function of the specific protocol performed.

Highly oriented pyrolitic graphite (HOPG) is an inert substrate with a structural honeycomb lattice, well suited for the growth of two-dimensional (2D) silicene layer. It was reported that when Si atoms are deposited on HOPG surface at room temperature, they arrange in two configurations: silicene nanosheets and three dimensional clusters. In this work we demonstrate, by using scanning tunneling microscopy (STM) and Raman spectroscopy, that a third configuration stabilizes in the form of Si 2D nanosheets intercalated below the first top layer of carbon atoms. The Raman spectra reveal a structure located at 538 cm$^{-1}$ which we ascribe to the presence of sp$^2$ Si hybridization. Moreover, the silicon deposition induces several modifications in the graphite D and G Raman modes, which we interpret as an experimental evidence of the intercalation of the silicene nanosheets. The Si atom intercalation at room temperature takes place at the HOPG step edges and it detaches only the outermost graphene layer inducing a strong tensile strain mainly concentrated on the edges of the silicene nanosheets. Theoretical calculations of the structure and energetic viability of the silicene nanosheets, of the strain distribution on the outermost graphene layer and its influence on the Raman resonances support the STM and Raman observations., 18 pages, 9 figures, 2 tables

We predict the stability of a graphenelike silicene sheet on one monolayer of aluminum oxide. We find that the honeycomb buckled structure of silicene is not broken upon interaction with one monolayer of ${\mathrm{Al}}_{2}{\mathrm{O}}_{3}$ in the kagome geometry. As a consequence, the electronic band structure shows unperturbed cones with massless Dirac fermions embedded into ${\mathrm{Al}}_{2}{\mathrm{O}}_{3}$-derived bands. The heterostructure conserves the topological character of the freestanding silicene. The optical properties of the silicene/${\mathrm{Al}}_{2}{\mathrm{O}}_{3}$ bilayers clearly maintain the characteristic infrared universal limit of $\ensuremath{\pi}\ensuremath{\alpha}$. A quantized absorbance $N\ifmmode\cdot\else\textperiodcentered\fi{}\ensuremath{\pi}\ensuremath{\alpha}$ (with $N$ silicene layers) also occurs for stacking of multilayers.

THz time-domain spectroscopy (THz-TDS) is a suitable approach to study the state of preservation of cultural heritage made of organic materials in a non-destructive way. This technique highlights, in particular, the low-energy vibrational properties of these materials and the presence of the H-bonds between molecules [1]. We focus in particular on the study of modern artificially aged and ancient paper samples in order to determine in the THz spectra the distinctive features as a possible fingerprint of their state of aging and/or degradation. As water plays a significant role in the THz range, the behavior of THz spectra as a function of the hydration of samples was also investigated allowing discrimination between the spectral features induced by the simple presence of water and those due by the degradation of cellulose polymers in the paper. However, the use of the THz-TDS technique to establish the state of preservation of paper sheets poses significant challenges, in particular when measurements on low refractive index and thin samples, such as ancient documents, must be carried out [2]. We have successfully solved this problem by employing an efficient computational procedure to remove from the experimental signals the spurious interference effects generated by the Fabry-Pérot resonances in single freely standing paper sheets. The THz absorption spectra were then explained in terms of absorption peaks of the cellulose crystalline phase superimposed to a background contribution due to a disordered H-bonds network with a clear dependence from the degradation of samples [3]. DFT simulations confirmed that the spectral profile is composed of several peaks associated with long-range cellulose crystal phononic modes. A comparison between theoretical and experimental results also showed the important role of water in cellulose polymers dynamics at THz frequencies. An experimental and theoretical DFT-based study of alpha-lactose was also performed. This compound possesses a chemical structure similar to those of cellulose but the lack of disordered regions allows a precise measurement of vibrational THz peaks. Furthermore, the knowledge of hydrated and non-hydrated crystal structures allowed us to study the effect of water molecules on their vibrational properties. Due to the very importance of water in determining the THz behavior of organic material, we also focus our attention on the measurement and analysis of the dielectric response of pure water and chloride solutions in the range 0.2-1.6 THz. We were able to satisfactory represent the permittivity of solutions as the weighted sum of two single-parameter Debye relaxations describing clusters of correlated water molecules coexisting with poorly or uncorrelated single dipoles. Finally, since cultural heritage materials are in general complex and disordered systems, we have investigated the propagation of THz waves in disordered media with a refractive index varying on the scale of the wavelength. Results showed evidence of a resonant transport supported by finite-size scatterers that strongly affects the velocity of propagation of light and breaks the diffusion approximation. References 1. P.U. Jepsen, D.G. Cooke, M. Koch, Terahertz spectroscopy and imaging - modern techniques and applications, Laser Photonics Rev., 5 (1), 124-166 (2011). 2. R. Fastampa, L. Pilozzi, and M. Missori, Cancellation of Fabry-Perot interference effects in terahertz time-domain spectroscopy of optically thin samples, Phys. Rev. A., 95, 063831 (2017). 3. M. Missori, et al., Microchem. J., 142, 54-61 (2018).

We propose a characterization tool for studies of the band structure of new materials promising for the observation of topological phase transitions. We show that a specific resonant feature in the entropy per electron dependence on the chemical potential may be considered as a fingerprint of the transition between topological and trivial insulator phases. The entropy per electron in a honeycomb two-dimensional crystal of germanene subjected to the external electric field is obtained from the first principle calculation of the density of electronic states and the Maxwell relation. We demonstrate that, in agreement to the recent prediction of the analytical model, strong spikes in the entropy per particle dependence on the chemical potential appear at low temperatures. They are observed at the values of the applied bias both below and above the critical value that corresponds to the transition between the topological insulator and trivial insulator phases, while the giant resonant feature in the vicinity of zero chemical potential is strongly suppressed at the topological transition point, in the low temperature limit. In a wide energy range, the van Hove singularities in the electronic density of states manifest themselves as zeros in the entropy per particle dependence on the chemical potential., Comment: 8 pages, 5 figures; final version published in PRB

We report on Raman scattering of GaSe for thicknesses varying from bulk down to bilayer. The Raman spectra using 532 nm excitation show a strong dependence on layer thickness. The two out-of-plane modes of GaSe shift in opposite directions as the thickness increases. However, from pentalayer the Raman spectra of GaSe do not show any further change thus reaching bulk nature in terms of optical properties. We also perform ab initio density functional theory calculations for the geometry, the electronic band structure, and the Raman frequencies for bulk down to one monolayer. Good agreement with the experimental results is found, and we reproduce the trend, driven by the number of layers, in the Raman shifts. Our results present the first systematic approach to a layer dependent Raman study of GaSe and answer contradictions reported in the literature.

Using a combination of the density functional theory and tight-binding calculations, we study electronic and optical properties of asymmetric chevron-type graphene nanoribbons recently synthesized with atomic precision. We demonstrate that the low-energy optical selection rules in such infinite chiral ribbons are more reminiscent of those for zigzag rather than for armchair ribbons. It is also shown that, starting from about 25 nm long ribbons, the low-energy absorption and therefore the selection rules of infinitely long ribbons are well reproduced in the finite cluster approach. Hence, ribbons longer than 25 nm (about 28 unit cells) can be treated as infinitely long ones.

Slightly buckled, graphene-like honeycomb crystals made by silicon, silicene, or by other group-IV elements such as germanene and stanene represent atomically thin films, i.e., two-dimensional (2D) systems. The theoretical description of their optical properties suffers from three difficulties, (i) a thickness much smaller than the wavelength of light, (ii) their common modeling by superlattice arrangements with sufficiently large layer distances, and (iii) the inclusion of many-body effects. Here, the solutions of all problems are discussed. (i) The optical response of an individual honeycomb crystal is described by a tensor of 2D optical conductivities or dielectric functions, which are related to the optical response of the corresponding superlattice. (ii) The influence of such a sheet crystal on the transmittance, reflectance and absorbance of a layer system is described. (iii) Excitonic and quasiparticle effects are demonstrated to widely cancel each other. Silicene sheets are investigated in detail. As a consequence of the linear bands and Dirac cones the low-frequency absorbance is defined by the Sommerfeld finestructure constant. Van Hove singularities represented by critical points in the interband structure are identified at higher photon energies. Clear chemical trends along the row C \(\rightarrow \) Si \(\rightarrow \) Ge \(\rightarrow \) Sn are derived. The influence of multiple layers is studied for the cases of bilayer silicene and graphene.

The exotic electrodynamics properties of graphene come from the linearly dispersive electronic bands that host massless Dirac electrons. A similar behavior was predicted to manifest in freestanding silicene, the silicon counterpart of graphene, thereby envisaging a new route for silicon photonics. However, the access to silicene exploitation in photonics was hindered so far by the use of optically inappropriate substrates in experimentally realized silicene. Here we report on the optical conductivity of silicon nanosheets epitaxially grown on optically transparent Al2O3(0001) from a thickness of a few tens of nanometers down to the extreme two-dimensional (2D) limit. When a 2D regime is approached, a Dirac-like electrodynamics can be deduced from the observation of a low-energy optical conductivity feature owing to a silicene-based interfacing to the substrate. © 2018 American Chemical Society.

We study the electronic properties of two-dimensional (2D) group-III nitrides BN, AlN, GaN, InN, and TlN by first-principles approaches. With increasing group-III atomic number, a decrease of the electronic gap from 6.7 eV to 0 eV takes place. 2D GaN and 2D InN in honeycomb geometry present a direct gap at Γ, while the honeycomb structures of BN and AlN tend to be indirect semiconductors with the valence band maximum at K. Alloying of the nitrides allows tuning the gap with cation composition. Interestingly, Inx Ga1-xN and Inx Tl1-xN alloys enable, with varying x, to construct type I or type II heterostructures. We demonstrate that it is possible to tailor the electronic and optical response from UV to IR. We suggest that 2D InGaN and InTlN heterostructures may efficiently harvest light and serve as building blocks for a future generation of III-V solar cells. Finally, 2D InTlN with a low In content is eligible as the emitter and detector for THz applications.

The prediction of silicene [1], a 2D honeycomb crystal of silicon analogous to graphene, lead to intensive theoretical study [2]. Experimental realization has, on the one hand, been successful: although synthesis of free-standing silicene has remained elusive, various reports of silicene growth on Ag(110), Ag(111), ZrB2, and Ir(111) have appeared, culminating in the recent demonstration of a field-effect silicene-based transistor [3]. On the other hand, many of these reports have since been questioned as the strongly hybridized nature of the Si-substrate bonding apparently destroys the key electronic property (Dirac cone) [4]. In this presentation we report first principles calculations of the structure and optical properties of silicene-like nanoribbons reported to form on Ag(110) and as 2D overlayers on Ag(111). In the case of Si/Ag(110), several structural models have been proposed that suggest a Si-stabilized missing row reconstruction based on zigzag [5] or pentamer [6] chains. Refined experimental studies using grazing incidence x-ray diffraction (GIXD), scanning tunneling microscopy (STM), and surface optical spectra (reflectance anisotropy spectroscopy RAS and surface differential reflectance spectroscopy SDRS), are interpreted using density-functional theory (DFT) and confirm the correct structure as being a pentamer chain reconstruction [7], definitively ruling out silicene nanoribbon structures [8]. The case of Si/Ag(111) is complicated by the abundance of single and multilayer phases [9], and we attempt to cast light on the atomic geometry by interpreting recent experimental SDRS measurements [9,10] using ab initio DFT simulations of the full Si/Ag overlayer phase. The importance of including many-body effects in the optical spectra calculations is examined [11]. [1] G.G Guzman-Verri and L.C. Lew Van Yoon, Phys. Rev. B. 76, 075131 (2007) [2] See e.g. C. Grazianetti, E. Cinquanta and A. Molle, 2D Mater. 3, 012001 (2016) [3] L. Tao et al, Nature Nanotechnology 10 227 (2015) [4] R. Quhe et al, Sci. Rep. 4, 5476 (2014) [5] C. Hogan et al Phys. Rev. B 92, 115439 (2015). [6] J. I. Cerdá, et al, Nat. Commun. 7, 13076 (2016). [7] G. Prévot, C. Hogan, et al, Phys. Rev. Lett. 117, 276102 (2016); [8] P. De Padova, et al, APL 96, 261905 (2010); B. Aufray et al, APL 96, 183102 (2010); C. Lian and J. Ni, Physica B: Condensed Matter 407, 4695 (2012). [9] Y. Borensztein et al, Phys. Rev. B. 92, 155407 (2015) [10] Y. Borensztein, G. Prevot, L. Masson, Physical Review B 89, 245410 (2014); [11] C. Hogan, O. Pulci, D. Martin, A. Curcella, Y. Borensztein, in preparation.

The ab initio calculation of optical spectra of sheet crystals usually arranges them in a three-dimensional superlattice with a sufficiently large interlayer distance. We show how the resulting frequency-dependent dielectric tensor is related to the anisotropic optical conductivity of an individual sheet or to the dielectric tensor of a corresponding film with thickness $d$. Their out-of-plane component is taken into account, in contrast to usual treatments. We demonstrate that the generalized transfer-matrix method to model the optical properties of a layer system containing a sheet crystal accounts for all tensor components. As long as $d\ensuremath{\ll}\ensuremath{\lambda}$ ($\ensuremath{\lambda}$-wavelength of light) this generalized formulation of the optical properties for anisotropic two-dimensional (2D) systems of arbitrary thickness reproduces the limits found in literature that are based either on electromagnetic boundary conditions for a conducting surface or on an isotropic dielectric tensor. For $s$-polarized light, the results are independent of the sheet description. For oblique incidence of $p$-polarized light, the tensor nature of the optical conductivity (or the dielectric function) of the sheet crystal strongly impacts on reflectance, transmittance, and absorbance due to the out-of-plane optical conductivity. The limit $d\ensuremath{\rightarrow}0$ should be taken in the final expressions. Example spectra are given for the group-IV honeycomb 2D crystals graphene and silicene.

The Institute for Complex Systems, in collaboration with the University of Rome "Sapienza" and Tor Vergata and the University of Sussex (UK), has recently developed a THz spectroscopy laboratory aimed to academic and industrial research. The access to the wide THz electromagnetic band (which lies between optical waves and microwaves in the electromagnetic spectrum) has been limited for a long time by the lack of cost-effective and practical intense sources. The recent development of technologies for broadband THz generation is changing this scenario allowing a rapidly evolving field in research, industry, and security applications. Fingerprinting of spectroscopic lines in the THz region helps identifying chemical or biochemical molecules. Imaging with THz waves can be used for pharmaceutical, security, or identification of substances such as drugs, explosives or weapons. THz spectroscopy and imaging is used to quality control and optimization of industrial manufacturing processes. As example, one can look for tiny variations or defects in polymer and plastic materials, characterize the quality and morphology of paper products, textiles and wood products. Other examples span from measuring the thickness of coatings, non-destructive diagnostics for historical art conservation, and last but not the least, quality control of chocolate products with THz imaging.

Paper is an important material for many applications. During the centuries, it has been the most widely used writing support and therefore paper degradation is a major issue for cultural heritage. The main component of paper is cellulose, one of the most abundant biomaterials on Earth. Cellulose oxidation is mainly responsible for the yellowing of the ancient samples, through the formation of chromophores. In order to investigate this issue and the chromophores' role, we exploit the optical properties combining non-destructive experiments and theoretical calculations based on ab-initio techniques. In this paper, we illustrate the method and show its application to three ancient paper samples. The procedure we describe is a precious tool for cultural heritage preservation: indeed, the approach we present is based on non-invasive and non-destructive measurements that allows a microscopic understanding of cellulose-based artifacts degradation. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Silicene and related 2D crystals with honeycomb symmetry are of increasing interest because of their compatibility with the Si-device technology. By means of density functional and many-body perturbation theory we model their principal properties and growth on substrates. In the case of hydrogenated crystals also excitons in two dimensions are studied.

Graphene, a 2D layer of sp2 bonded carbon atoms in honeycomb arrangement, is a recently synthesized material, with exceptional mechanical, electronic, optical and thermal properties. Although theoretically studied since a long time, as it is the building block of graphite (a stacking of graphene layers), it was isolated as single or few layers only in 2004. Today graphene can be produced by several methods that depend on the quality and dimension of the material to be obtained. Applications of graphene are extensive in electronics, photonics, sensing and also in the field of energy generation and storage. Belonging to the same chemical group of carbon, also silicon could be in principle the ingredient of a 2D material similar to graphene, named silicene. It shares with graphene the peculiar optical and electronic properties and could provide a more easy compatibility with the existing silicon-based microelectronics technology. An extremely high thermal conductivity in the range 3000-5000 Wm-1K-1 has been measured for graphene. Only few results exist instead on the thermal properties of silicene. In this work we report ab-initio calculations, based on density functional theory and density functional perturbation theory, that provide the ingredients for the determination of the thermal conductivity and specific heat of graphene, silicene and 2D silicon carbide. Ab-initio calculations solve Schrodinger equation without the need of empirical parameters, only knowing the chemical nature of the system constituents. The use of consolidated approximations employed in density functional theory allows the accurate prediction of several properties of materials.

We review here some of the most reliable and efficient computational theoretical ab initio techniques for the prediction of optical and electronic spectroscopic properties and show some important applications to molecules, surfaces, and solids. We investigate the role of the solvent in the optical absorption spectrum of indole molecule. We study the excited-state properties of a photo-active minimal model molecule for the retinal of rhodopsin, responsible for vision mechanism in animals. We then show a study about spectroscopic properties of Si(1 1 1) surface. Finally we simulate a bulk system: paper, that is mainly made of cellulose, a pseudo-crystalline material representing 40% of annual biomass production in the Earth.

We show that the low-frequency absorbance of undoped graphene, silicene, and germanene has a universal value, only determined by the Sommerfeld fine-structure constant. This result is derived by means of ab initio calculations of the complex dielectric function for optical interband transitions applied to two-dimensional (2D) crystals with honeycomb geometry. The assumption of chiral massless Dirac fermions is not necessary. The low-frequency absorbance does not depend on the group-IV atom, neither on the sheet buckling nor on the orbital hybridization. We explain these findings via an analytical derivation of the relationship between absorbance and fine-structure constant for 2D Bloch electrons. The effect of deviations of the electronic bands from linearity is also discussed. DOI: 10.1103/PhysRevB.87.035438

Nanostructuring of a material leads to enormous effects on its excited state properties. This study, through the application of different state-of-the-art ab initio theoretical tools, investigates the effect of size on the electronic gap of germanium nanocrystals highlighting similarities and differences with respect to equivalent silicon nanostructures. We performed both GW and ?SCF calculations for the determination of their electronic structure. While it is known that ?SCF corrections to the Kohn-Sham gap vanish for extended systems, the two approaches were expected to be equivalent in the limit of small clusters. However, it has been recently found that for hydrogenated Si clusters the ?SCF gaps are systematically smaller than the GW ones, while the opposite is true for Ag clusters. In this work we find that the GW gaps are larger than the ?SCF ones for all the Ge dots, with the exception of the smallest one. Such crossing between the ?SCF and the GW gap values was not expected and has never been observed before. Moreover, also for hydrogenated Si nanocrystals we found a similar behavior. The origin of this crossing might be found in the Rydberg character of the LUMO of the smallest clusters and can also explain the qualitative differences in the comparison between GW and ?SCF found in the previous studies. © 2013 American Chemical Society.

The recently reported synthesis of silicene in the form of nanoribbons on Ag(110) or 2D epitaxial sheets on Ag(111) aroused considerable interest in the scientific community. Both overlayers were reported to display signatures of Dirac fermions with linearly dispersing electronic bands. In this work, we study the electronic structure of these adsorbate systems within density functional theory. We show that the conical features apparent in angle-resolved photoelectron spectroscopy measurements are not due to silicon but to the silver substrate, as an effect of band folding induced by the Si overlayer periodicity.

We present first-principles studies of the optical absorbance of the group IV honeycomb crystals graphene, silicene, germanene, and tinene. We account for many-body effects on the optical properties by using the non-local hybrid functional HSE06. The optical absorption peaks are blueshifted due to quasiparticle corrections, while the influence on the low-frequency absorbance remains unchanged and reduces to a universal value related to the Sommerfeld fine structure constant. At the Dirac points spin-orbit interaction opens fundamental band gaps; parabolic bands with a very small effective mass emerge. Consequently, the low-frequency absorbance is modified with a spin-orbit-induced transparency region and an increase of the absorbance at the fundamental absorption edge.

The structural and electronic properties of SiC-based two-dimensional (2D) crystals are studied by means of density functional theory and many-body perturbation theory. Such properties cannot simply be interpolated between graphene and silicene. The replacement of half of the C atoms by Si atoms opens a large direct electronic gap and destroys the Dirac cones. Hydrogenation further opens the gap and significantly reduces the electron affinity to 0.1 or 1.8 eV in dependence on the carbon or silicon termination of the 2D crystal surface, thus showing a unique direction dependent ionization potential. This suggests the use of 2D-SiC:H as electron or hole filter.