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We report the optical and electrical properties of a-Si:H and a-Si1 − xC x:H ( x = 0.06, 0.17, 0.25,0.32) amorphous films produced by plasma deposition at constant hydrogen content. IR absorption data are used to evaluate the density of Si-H and C-H bonds and the hydrogen concentration in the films. The activation energy for conduction and the carrier mobility in the films are determined from the temperature dependence of their electrical conductivity. [ABSTRACT FROM AUTHOR]

Plasma deposition has been used to grow Si1− xGe x:H( x= 0 − 1) films, undoped and doped with PH3 or B2H6, for p-i-n solar cells and other optoelectronic applications. The optical, electrical, and photoelectric properties of the films have been studied at constant hydrogenation and doping levels. The films deposited under appropriate conditions are amorphous, and three-layer solar cells fabricated from such films offer an efficiency of 9.5% at an illumination of 100 mW/cm2. The photoresponse of the a-Si1 − xGe x:H films strongly depends on Ge content. The hydrogen concentration in the films was controlled by varying the gas phase composition and was determined from the IR absorption in the films. [ABSTRACT FROM AUTHOR]

Amorphous Si0.60Ge0.40:Hx films containing 1.7, 3.9, 7.1, 12.1, and 17.3 at % H are prepared by magnetron sputtering at different hydrogen partial pressures, and their electrical conductivity is measured from 80 to 350 K. The conductivity of the films exhibits Arrhenius behavior in the range 250–350 K and satisfies the relation log(σ T1/2) ∼ T−1/4 between 80 and 250 K. The conductivity data are used to evaluate the electron localization radius, hop distance, and activation energy of hopping conduction at 80 K; the electron mobility at the Fermi level and in the conduction band; and the 300-K activation energy of conduction. [ABSTRACT FROM AUTHOR]