Optical and electrical properties of amorphous Si1 − xC x:H films.

We report the optical and electrical properties of a-Si:H and a-Si1 − xC x:H ( x = 0.06, 0.17, 0.25,0.32) amorphous films produced by plasma deposition at constant hydrogen content. IR absorption data are used to evaluate the density of Si-H and C-H bonds and the hydrogen concentration in the films. The activation energy for conduction and the carrier mobility in the films are determined from the temperature dependence of their electrical conductivity. [ABSTRACT FROM AUTHOR]